SUP90N10-09 New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0094 @ VGS = 10 V 90 a APPLICATIONS D Automotive - 42-V Power Bus - DC/DC Conversion - Motor Drivers - Injection Systems D TO-220AB G G D S S Top View SUP90N10-09 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) _ TC = 25_C TC = 125_C Pulsed Drain Current ID IDM Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C Maximum Power Dissipationb TA = 25_Cd Operating Junction and Storage Temperature Range Unit V 90a 64a A 240 IAR 75 EAR 280 mJ 300c PD 3.75 W TJ, Tstg -55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mounted)d Junction-to-Case (Drain) RthJA 40 RthJC 0.5 _ _C/W Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 72075 S-22125—Rev. A, 25-Nov-02 www.vishay.com 1 SUP90N10-09 New Product Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 100 VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C V 4 VDS = 80 V, VGS = 0 V, TJ = 175_C 250 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea gfs VDS = 15 V, ID = 30 A m mA mA A 0.0075 0.0094 0.017 VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea nA W 0.024 25 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 8700 VGS = 0 V, VDS = 25 V, f = 1 MHz 740 pF 450 140 VDS = 50 V, VGS = 10 V, ID = 85 A Qgd 210 41 nC 41 td(on) 20 30 tr 110 170 65 100 100 150 td(off) VDD = 50 V, RL = 0.6 W ID ^ 85 A, VGEN = 10 V, RG = 2.5 W tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 90 Pulsed Current ISM 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 50 A, VGS = 0 V 1.0 1.5 V 70 140 ns IF = 50 A, di/dt = 100 A/ms m 5.5 10 A 0.19 0.35 mC trr IRM(REC) Qrr A Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72075 S-22125—Rev. A, 25-Nov-02 SUP90N10-09 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 250 VGS = 10 thru 6 V 200 I D - Drain Current (A) I D - Drain Current (A) 200 150 5V 100 50 150 100 TC = 125_C 50 25_C -55 _C 4V 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 250 0.015 TC = -55_C r DS(on) - On-Resistance ( W ) g fs - Transconductance (S) 200 25_C 150 125_C 100 50 0 0.012 VGS = 10 V 0.009 0.006 0.003 0.000 0 15 30 45 60 75 90 0 20 40 ID - Drain Current (A) 80 100 120 ID - Drain Current (A) Capacitance Gate Charge 12000 20 V GS - Gate-to-Source Voltage (V) 10000 Ciss C - Capacitance (pF) 60 8000 6000 4000 2000 Crss Coss 0 VDS = 50 V ID = 85 A 16 12 8 4 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Document Number: 72075 S-22125—Rev. A, 25-Nov-02 100 0 50 100 150 200 250 Qg - Total Gate Charge (nC) www.vishay.com 3 SUP90N10-09 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S - Source Current (A) r DS(on) - On-Resistance (W) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 150_C TJ = 25_C 10 0.5 0.0 -50 -25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 1000 125 120 ID = 10 mA V(BR)DSS (V) 100 I Dav (a) IAV (A) @ TA = 25_C 10 115 110 105 1 IAV (A) @ TA = 150_C 100 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1 95 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) Document Number: 72075 S-22125—Rev. A, 25-Nov-02 SUP90N10-09 New Product Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 120 1000 Limited by rDS(on) 10 ms I D - Drain Current (A) I D - Drain Current (A) 100 80 60 40 100 100 ms, 10 10 ms dc, 100 ms 1 20 0 0 25 50 75 100 125 150 0.1 0.1 175 1 ms TC = 25_C Single Pulse 1 10 100 VDS - Drain-to-Source Voltage (V) TC - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) Document Number: 72075 S-22125—Rev. A, 25-Nov-02 www.vishay.com 5