HS-2600RH Data Sheet Radiation Hardened Wideband, High Impedance Operational Amplifier HS-2600RH is a radiation hardened internally compensated bipolar operational amplifier that features very high input impedance coupled with wideband AC performance. The high resistance of the input stage is complemented by low offset voltage (4mVmax at 25oC for HS-2600RH) and low bias and offset current (10nA max at 25oC for HS-2600RH) to facilitate accurate signal processing. Offset voltage can be reduced further by means of an external nulling potentiometer. The 4V/µs minimum slew rate at 25oC and the minimum open loop gain of 100kV/V at 25oC enables the HS-2600RH to perform high gain amplification of fast, wideband signals. These dynamic characteristics, coupled with fast settling times, make these amplifiers ideally suited to pulse amplification designs as well as high frequency or video applications. The frequency response of the amplifier can be tailored to exact design requirements by means of an external bandwidth control capacitor. Other high performance designs such as high gain, low distortion audio amplifiers, high-Q and wideband active filters and high speed comparators, are excellent uses of this part. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95671. A “hot-link” is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp August 1999 File Number 3650.1 Features • Electrically Screened to SMD # 5962-95671 • QML Qualified per MIL-PRF-38535 Requirements • High Input Impedance . . . . . . . . . . . . . . . . . 100MΩ (Min) 500MΩ (Typ) • High Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . 3V/µs (Min) 7V/µs (Typ) • Low Input Bias Current . . . . . . . . . . . . . . . . . . 10nA (Max) 1nA (Typ) • Low Input Offset Current (HS-2600RH) . . . . . . 4mV (Max) • Wide Unity Gain Bandwidth . . . . . . . . . . . . . .12MHz (Typ) • Output Short Circuit Protection • Total Gamma Dose. . . . . . . . . . . . . . . . . . . . . 10kRAD(Si) Applications • Video Amplifier • Pulse Amplifier • High-Q Active Filters • High Speed Comparators • Low Distortion Oscillators Pinout HS7-2600RH (CERDIP) GDIP1-T8 OR HS7B-2600RH (SBDIP) CDIP2-T8 TOP VIEW Ordering Information ORDERING NUMBER INTERNAL MKT. NUMBER TEMP. RANGE (oC) BAL 1 -IN 2 5962D9567101VPA HS7-2600RH-Q -55 to 125 +IN 3 5962D9567101VPC HS7B-2600RH-Q -55 to 125 V- 4 1 – + 8 COMP 7 V+ 6 OUT 5 BAL CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HS-2600RH Test Circuit † INCLUDES STRAY +VCC ACOUT CAPACITANCES V1 -1/10 0.1 100K 1 2K 1 OPEN S7 3 2 S3A S1 DUT 1 S6 1 S5B 1 + S8 OPEN 100 100 2 S3B 1 OPEN 500K S5A 1 OPEN 2 100K 2 50K 2 OPEN 2 S2 FOR LOOP STABILITY, USE MIN VALUE CAPACITOR TO PREVENT OSCILLATION BAL 2 ADJ 2 1 100pF† OPEN 1 1 2K VAC 0.1 + 2 1 3 - 1 + S9 OPEN 2 BUFFER V2 10K -VEE 1 x2 EOUT 5K 2 1 S4 ALL RESISTORS = ±1% (Ω) ALL CAPACITORS = ±10% (µF) 50K NOTE: For Detailed Information, Refer to HS-2600RH Test Technical Brief. Test Waveforms SIMPLIFIED TEST CIRCUIT VAC + - VOUT 2kΩ 100pF SLEW RATE WAVEFORMS +5.0V +5.0V +5.0V 75% INPUT -5.0V -5.0V +SL ∆V ∆V OUTPUT 25% -5.0V +5.0V 75% 25% -5.0V -SL ∆T SR = ∆V ∆T ∆T OVERSHOOT, RISE AND FALL TIME WAVE FORMS +200mV 0V VFINAL = +200mV VPEAK 90% 0V 10% OUTPUT INPUT 0V -200mV tr,+OS 10% 0V 90% tf,-OS tr NOTE: tf Measured on both positive and negative transitions. Capacitance at compensation pin should be minimized. 2 VPEAK -200mV HS-2600RH Burn-In Circuit HS-2600RH CERDIP 1 8 2 7 R1 + 3 V- 4 V+ C3 6 C1 D1 5 C2 D2 NOTES: 1. R1 = 1MΩ, ±5%, 1/4W (Min) 2. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min) 3. C3 = 0.01µF/Socket (10%) 4. D1 = D2 = IN4002 or Equivalent/Board 5. | (V+) - (V-) | = 30V Irradiation Circuit C 1 8 2 7 3 6 4 5 C R V2 C GND NOTES: 6. V1 = +15V ±10% 7. V2 = -15V ±10% 8. R = 1MΩ ±5% 9. C = 0.1µF ±10% 3 V1 HS-2600RH Schematic Diagram COMPENSATION V+ R1 1K BAL R2 4.18K R3 1.56K R4 1.56K C3 16pF BAL Q1 R5 600 C4 4pF C2 9pF Q39 Q41 Q38 Q4 Q42 Q37 Q5 Q58 Q7 Q11 Q30 Q31 Q29 Q28 Q36 Q35 Q43 Q33 Q32 Q44 Q13 Q12 Q57 Q9 Q10 Q26 Q25 Q55 Q54 Q56 R18 30 Q53 R17 30 OUT Q17 Q18 Q16 Q59 Q6 +INPUT Q8 Q60 Q61 Q40 Q2 Q3 R6 30 Q45 Q24 Q27 Q15 Q47 Q46 R7 1.35 R19 2.5K Q52 R11 4.0K Q19 Q22 Q21 Q23 RP1 R8 1K Q48 Q50 Q49 R9 4.5K Q20 R10 2.0K C1 16pF Q51 R12 1.6K R13 1.6K R14 2.1K R15 800 R16 30 V- -INPUT 4 HS-2600RH Die Characteristics DIE DIMENSIONS: ASSEMBLY RELATED INFORMATION: 69 mils x 56 mils x 19 mils ±1 mils 1750µm x 1420µm x 483µm ±25.4µm Substrate Potential (Powered Up): Unbiased INTERFACE MATERIALS: ADDITIONAL INFORMATION: Glassivation: Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.) Silox Thickness: 12kÅ ±2kÅ Nitride Thickness: 3.5kÅ ±1.5kÅ Worst Case Current Density: <2 x 105A/cm2 Transistor Count: Top Metallization: 140 Type: Al, 1% Cu Thickness: 16kÅ ±2kÅ Substrate: Linear Bipolar DI Backside Finish: Silicon Metallization Mask Layout +IN HS-2600RH -IN BAL V- COMP V+ BAL OUT All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. 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