Si4946BEY Vishay Siliconix Dual N-Channel 60-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested • Compliant to RoHS directive 2002/95/EC SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D1 D2 G1 G2 Top View Ordering Information: Si4946BEY-T1-E3 (Lead (Pb)-free) Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C 5.5 ID 5.3a, b 4.4a, b IDM Continuous Source Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0 1 mH TC = 70 °C TA = 25 °C 3.1 IS 2a, b IAS 12 EAS 7.2 mJ 3.7 2.6 PD W 2.4a, b 1.7a, b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 30 TC = 25 °C Maximum Power Dissipation V 6.5 TA = 70 °C Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a, c Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t ≤ 10 s RthJA 50 62.5 Steady State RthJF 33 41 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. d. Maximum under Steady State conditions is 110 °C/W. Document Number: 73411 S09-2434-Rev. C, 16-Nov-09 www.vishay.com 1 Si4946BEY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 1 µA A 0.033 0.041 VGS = 4.5 V, ID = 4.7 A 0.041 0.052 VDS = 15 V, ID = 5.3 A 24 Ω S VDS = 30 V, VGS = 0 V, f = 1 MHz 71 VDS = 30 V, VGS = 10 V, ID = 5.3 A 17 25 9.2 12 pF 3.3 nC 3.7 VDD = 30 V, RL = 6.8 Ω ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω 3.1 6.5 9.5 20 30 120 180 20 30 tf 30 45 td(on) 10 15 VDD = 30 V, RL = 6.8 Ω ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 30 VGS = 10 V, ID = 5.3 A f = 1 MHz td(off) Turn-Off Delay Time V nA 10 VDS = 30 V, VGS = 5 V, ID = 5.3 A tr Rise Time 3.0 ± 100 44 td(off) Fall Time 2.4 840 tr Turn-Off Delay Time 1.0 VDS = 60 V, VGS = 0 V td(on) Turn-On Delay Time Rise Time mV/°C - 6.7 VDS = 60 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V RDS(on) V 53 12 20 25 40 10 15 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage TC = 25 °C IS 3.1 ISM 30 IS = 2 A VSD 0.8 1.2 A V Body Diode Reverse Recovery Time trr 25 50 ns Body Diode Reverse Recovery Charge Qrr 25 50 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C 18 7 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73411 S09-2434-Rev. C, 16-Nov-09 Si4946BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 10 VGS = 10 V thru 5 V 8 ID - Drain Current (A) I D - Drain Current (A) 25 20 4V 15 10 6 4 TC = 150 °C 25 °C 2 5 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.100 1200 1000 0.080 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 1.0 0.060 VGS = 4.5 V 0.040 800 600 400 VGS = 10 V 0.020 200 0.000 Coss Crss 0 0 5 10 15 20 25 30 0 10 ID - Drain Current (A) 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 2.2 10 8 VDS = 30 V 6 VDS = 48 V 4 1.8 VGS = 10 V (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 5.3 A 2.0 ID = 5.3 A 1.6 1.4 VGS = 4.5 V 1.2 1.0 2 0.8 0 0 4 8 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73411 S09-2434-Rev. C, 16-Nov-09 16 20 0.6 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4946BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 30 TJ = 175 °C 10 TJ = 25 °C ID = 5.3 A 0.08 TJ = 150 °C 0.06 0.04 TJ = 25 °C 0.02 0.00 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.0 25 2.8 20 2.6 ID = 250 µA Power (W) VGS(th) (V) 2.4 2.2 2.0 15 10 1.8 1.6 5 1.4 1.2 - 50 - 25 0 25 50 75 100 125 150 0 0.01 175 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 I D - Drain Current (A) 10 Limited by RDS(on)* 100 µs 1 ms 1 10 ms 100 ms 0.1 0.01 0.01 TA = 25 °C Single Pulse 0.1 1 1s 10 s DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73411 S09-2434-Rev. C, 16-Nov-09 Si4946BEY Vishay Siliconix 8 4.0 7 3.5 6 3.0 5 2.5 Power (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 2.0 3 1.5 2 1.0 1 0.5 0.0 0 0 25 50 75 100 125 150 25 175 50 75 100 125 150 175 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case I C - Peak Avalanche Current (A) 100 10 TA = L · ID BV - V DD 1 0.000001 0.00001 0.0001 0.001 TA - Time In Avalanche (s) Single Pulse Avalanche Capability * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73411 S09-2434-Rev. C, 16-Nov-09 www.vishay.com 5 Si4946BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.02 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73411. www.vishay.com 6 Document Number: 73411 S09-2434-Rev. C, 16-Nov-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000