SK3020CD2 ... SK30100CD2 SK3020CD2 ... SK30100CD2 Surface Mount Schottky Rectifier Diodes– Common Cathode Schottky-Gleichrichterdioden für die Oberflächenmontage – Gemeinsame Kathode Version 2013-09-25 1.2 Nominal Current Nennstrom 10.25 ±0.5 4.5 ± 0.2 4 Repetitive peak reverse voltage Periodische Spitzensperrspannung Type Typ 1 2 3 0.8 TO-263 D2PAK Weight approx. – Gewicht ca. 5.08 1 2 3 1.6 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 4 Standard packaging in tubes Standard Lieferform in Stangen Dimensions - Maße [mm] Green Molding Halogen-Free1 Maximum ratings and Characteristics Type Typ 20...100 V Plastic case Kunststoffgehäuse 1.3 0.4 30 A Grenz- und Kennwerte Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward Voltage Durchlass-Spannung VF [V] Tj = 25°C 2) IF = 5 A IF = 15 A SK3020CD2 20 20 < 0.49 < 0.55 SK3030CD2 30 30 < 0.49 < 0.55 SK3040CD2 40 40 < 0.49 < 0.55 SK3045CD2 45 45 < 0.49 < 0.55 SK3050CD2 50 50 < 0.63 < 0.70 SK3060CD2 60 60 < 0.63 < 0.70 SK3080CD2 80 80 < 0.77 < 0.85 SK30100CD2 100 100 < 0.77 < 0.85 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV IFAV 15 A 3) 30 A 3) Repetitive peak forward current – Periodischer Spitzenstrom f > 15 Hz IFRM 55 A 3) Peak forward surge current 50/60 Hz half sine-wave SK3020 ... 60CD2 Stoßstrom für eine 50/60 Hz Sinus-Halbwelle SK3080 ... 100CD2 TA = 25°C TA = 25°C IFSM IFSM 280/320 A 3) 240/270 A 3) Rating for fusing, t < 10 ms – Grenzlastintegral, t < 10 ms TA = 25°C i2t 390 A2s 3) Junction temperature – Sperrschichttemperatur in DC forward mode – bei Gleichstrom-Durchlassbetrieb Tj Tj -50...+150°C ≤ 200°C 4) Storage temperature – Lagerungstemperatur TS -50...+175°C IR < 500 µA 2) RthC < 1.5 K/W 3) Leakage current - Sperrstrom Tj = 25°C VR = VRRM Thermal resistance junction to case - Wärmewiderstand Sperrschicht - Gehäuse 1 2 3 4 From 2H/2013 – Ab 2H/2013 Per diode – Pro Diode Per device (parallel operation) − Pro Bauteil (Parallelbetrieb) For more details, ask for the Diotec Application Note “Reliability of Solar Bypass Diodes” Weitere Infos in der Diotec Applikationsschrift „Reliability of Solar Bypass Diodes” © Diotec Semiconductor AG http://www.diotec.com/ 1 SK3020CD2 ... SK30100CD2 120 102 [%] SK3020CD2...SK3045CD2 [A] 100 10 80 SK3050CD2, SK3060CD2 1 60 Tj = 25°C Tj = 125°C 40 10-1 20 IF IFAV SK3080CD2, SK30100CD2 10-2 0 0 TC 100 50 150 0 [°C] Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Temp. Des Gehäuses 103 [mA] 104 Tj = 150°C [µA] 2 10 103 Tj = 150°C Tj = 125°C 10 102 Tj = 75°C VRRM = 20V ... 45V Tj = 25°C IR Tj = 25°C 10-1 0 Tj = 125°C 10 1 IR 0.4 0.6 1.0 VF [V] Forward characteristics (typical values) Durchlasskennlinien (typische Werte) VRRM = 80V ... 100V 1 VRRM 40 60 80 100 [%] 0 Typ. instantaneous leakage current vs. rev. voltage Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung VRRM 40 60 80 100 [%] Typ. instantaneous leakage current vs. rev. voltage Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung [pF] Tj = 25°C f = 1.0 MHz Cj VR [V] Junction capacitance vs. reverse voltage (typical) Sperrschichtkapazität in Abh. v.d. Sperrspg. (typ.) 2 http://www.diotec.com/ © Diotec Semiconductor AG