SK3020CD2

SK3020CD2 ... SK30100CD2
SK3020CD2 ... SK30100CD2
Surface Mount Schottky Rectifier Diodes– Common Cathode
Schottky-Gleichrichterdioden für die Oberflächenmontage – Gemeinsame Kathode
Version 2013-09-25
1.2
Nominal Current
Nennstrom
10.25 ±0.5
4.5 ± 0.2
4
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Type
Typ
1
2
3
0.8
TO-263
D2PAK
Weight approx. – Gewicht ca.
5.08
1
2
3
1.6 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
4
Standard packaging in tubes
Standard Lieferform in Stangen
Dimensions - Maße [mm]
Green Molding
Halogen-Free1
Maximum ratings and Characteristics
Type
Typ
20...100 V
Plastic case
Kunststoffgehäuse
1.3
0.4
30 A
Grenz- und Kennwerte
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
Forward Voltage
Durchlass-Spannung
VF [V] Tj = 25°C 2)
IF = 5 A
IF = 15 A
SK3020CD2
20
20
< 0.49
< 0.55
SK3030CD2
30
30
< 0.49
< 0.55
SK3040CD2
40
40
< 0.49
< 0.55
SK3045CD2
45
45
< 0.49
< 0.55
SK3050CD2
50
50
< 0.63
< 0.70
SK3060CD2
60
60
< 0.63
< 0.70
SK3080CD2
80
80
< 0.77
< 0.85
SK30100CD2
100
100
< 0.77
< 0.85
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C
IFAV
IFAV
15 A 3)
30 A 3)
Repetitive peak forward current – Periodischer Spitzenstrom
f > 15 Hz
IFRM
55 A 3)
Peak forward surge current 50/60 Hz half sine-wave SK3020 ... 60CD2
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
SK3080 ... 100CD2
TA = 25°C
TA = 25°C
IFSM
IFSM
280/320 A 3)
240/270 A 3)
Rating for fusing, t < 10 ms – Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
390 A2s 3)
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Tj
Tj
-50...+150°C
≤ 200°C 4)
Storage temperature – Lagerungstemperatur
TS
-50...+175°C
IR
< 500 µA 2)
RthC
< 1.5 K/W 3)
Leakage current - Sperrstrom
Tj = 25°C VR = VRRM
Thermal resistance junction to case - Wärmewiderstand Sperrschicht - Gehäuse
1
2
3
4
From 2H/2013 – Ab 2H/2013
Per diode – Pro Diode
Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
For more details, ask for the Diotec Application Note “Reliability of Solar Bypass Diodes”
Weitere Infos in der Diotec Applikationsschrift „Reliability of Solar Bypass Diodes”
© Diotec Semiconductor AG
http://www.diotec.com/
1
SK3020CD2 ... SK30100CD2
120
102
[%]
SK3020CD2...SK3045CD2
[A]
100
10
80
SK3050CD2,
SK3060CD2
1
60
Tj = 25°C
Tj = 125°C
40
10-1
20
IF
IFAV
SK3080CD2, SK30100CD2
10-2
0
0
TC
100
50
150
0
[°C]
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Temp. Des Gehäuses
103
[mA]
104
Tj = 150°C
[µA]
2
10
103
Tj = 150°C
Tj = 125°C
10
102
Tj = 75°C
VRRM = 20V ... 45V
Tj = 25°C
IR
Tj = 25°C
10-1
0
Tj = 125°C
10
1
IR
0.4
0.6
1.0
VF
[V]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
VRRM = 80V ... 100V
1
VRRM 40
60
80
100
[%]
0
Typ. instantaneous leakage current vs. rev. voltage
Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung
VRRM 40
60
80
100
[%]
Typ. instantaneous leakage current vs. rev. voltage
Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung
[pF]
Tj = 25°C
f = 1.0 MHz
Cj
VR
[V]
Junction capacitance vs. reverse voltage (typical)
Sperrschichtkapazität in Abh. v.d. Sperrspg. (typ.)
2
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© Diotec Semiconductor AG