SiA810DJ Datasheet

New Product
SiA810DJ
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode
FEATURES
PRODUCT SUMMARY
Qg (Typ.)
0.053 at VGS = 4.5 V
ID (A)a
4.5
0.063 at VGS = 2.5 V
4.5
4.1 nC
0.077 at VGS = 1.8 V
4.5
VDS (V)
RDS(on) (Ω)
20
• Halogen-free
• LITTLE FOOT® Plus Schottky Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
• Low Vf Trench Schottky Diode
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
IF (A)a
20
0.45 at 1 A
2
RoHS
COMPLIANT
APPLICATIONS
• Load Switch for Portable Devices (MP3/Cellular)
• Boost Converter
PowerPAK SC-70-6 Dual
D
K
Marking Code
1
A
2
NC
GAX
Part # code
3
D
K
XXX
D
6
G
Lot Traceability
and Date code
0.75 mm
K
G
5
2.05 mm
S
2.05 mm
S
4
Ordering Information: SiA810DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
A
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage (MOSFET)
Limit
Reverse Voltage (Schottky)
VKA
20
Gate-Source Voltage (MOSFET)
VGS
±8
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
IDM
Pulsed Drain Current (MOSFET)
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
TC = 25 °C
TA = 25 °C
IS
IF
Average Forward Current (Schottky)
IFM
Pulsed Forward Current (Schottky)
TC = 25 °C
Maximum Power Dissipation (MOSFET)
Soldering Recommendations (Peak Temperature)d, e
Document Number: 74957
S-80436-Rev. B, 03-Mar-08
3.8b, c
20
A
4.5a
1.6b, c
2b
5
6.5
5
1.9b, c
PD
1.2b, c
6.8
TC = 70 °C
4.3
TA = 25 °C
1.6b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
4.5a, b, c
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation (Schottky)
4.5a
TC = 70 °C
TA = 70 °C
V
4.5a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
Unit
20
TJ, Tstg
1.0b, c
- 55 to 150
260
W
°C
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1
New Product
SiA810DJ
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJC
RthJA
RthJC
t≤5s
Steady State
t≤5s
Steady State
Maximum Junction-to-Ambient (MOSFET)b, f
Maximum Junction-to-Case (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)b, g
Maximum Junction-to-Case (Drain) (Schottky)
Typical
52
12.5
62
15
Maximum
65
16
76
18.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
g. Maximum under Steady State conditions is 110 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
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2
tr
mV/°C
- 2.8
0.4
1
V
± 100
nA
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
VDS ≤ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 3.7 A
20
0.053
VGS = 2.5 V, ID = 3.4 A
0.052
0.063
VGS = 1.8 V, ID = 1.1 A
0.062
0.077
VDS = 10 V, ID = 3.7 A
15
400
VDS = 10 V, VGS = 0 V, f = 1 MHz
70
pF
40
VDS = 10 V, VGS = 8 V, ID = 4.8 A
7
11.5
4.1
7
VDS = 10 V, VGS = 4.5 V, ID = 4.8 A
0.65
f = 1 MHz
2.5
5
VDD = 10 V, RL = 2.6 Ω
ID ≅ 3.8 A, VGEN = 4.5 V, Rg = 1 Ω
Ω
10
32
50
30
45
53
80
5
10
tf
nC
0.8
tf
tr
Ω
S
td(on)
td(off)
µA
A
0.043
td(on)
td(off)
V
1
VDD = 10 V, RL = 2.6 Ω
ID ≅ 3.8 A, VGEN = 8 V, Rg = 1 Ω
12
20
15
25
10
15
ns
Document Number: 74957
S-80436-Rev. B, 03-Mar-08
New Product
SiA810DJ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
IS
TC = 25 °C
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
4.5
20
IS = 3.8 A, VGS = 0 V
IF = 3.8 A, di/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
15
30
ns
8.5
20
nC
10
ns
5
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
Symbol
VF
Irm
CT
Test Conditions
IF = 1 A
Min.
Typ.
Max.
0.41
0.45
IF = 1 A, TJ = 125 °C
0.36
0.41
Vr = 5 V
0.015
0.08
Vr = 5 V, TJ = 85 °C
0.50
5.00
Vr = 20 V
0.02
0.10
Vr = 20 V, TJ = 85 °C
0.7
7
Vr = 20 V, TJ = 125 °C
5
50
Vr = 10 V
60
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74957
S-80436-Rev. B, 03-Mar-08
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3
New Product
SiA810DJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
20
10
VGS = 5 thru 2.5 V
8
VGS = 2 V
I D - Drain Current (A)
I D - Drain Current (A)
16
12
8
VGS = 1.5 V
4
6
4
TC = 25 °C
2
TC = 125 °C
VGS = 1 V
0
0.0
0.4
0.8
1.2
1.6
TC = - 55 °C
0
0.0
2.0
0.4
Output Characteristics
1.6
2.0
Transfer Characteristics
0.16
600
0.14
500
C - Capacitance (pF)
VGS = 1.8 V
0.12
0.10
0.08
VGS = 2.5 V
0.06
Ciss
400
300
200
Coss
100
VGS = 4.5 V
0.04
Crss
0
0
4
8
12
16
20
0
4
ID - Drain Current (A)
8
12
16
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8
1.6
ID = 4.8 A
1.5
VGS = 4.5 V, 2.5 V, 1.8 V, ID = 3.7 A
1.4
VDS = 10 V
VDS = 16 V
4
2
1.3
(Normalized)
6
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1.2
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
R DS(on) - On-Resistance (Ω)
0.8
1.2
1.1
1.0
0.9
0.8
0
0
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4
2
4
6
8
0.7
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
Document Number: 74957
S-80436-Rev. B, 03-Mar-08
New Product
SiA810DJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
100
0.14
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.12
10
TJ = 150 °C
TJ = 25 °C
1
0.10
ID = 3.7 A, 125 °C
0.08
0.06
0.04
ID = 3.7 A, 25 °C
0.1
0.0
0.02
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
20
0.9
0.8
ID = 250 µA
15
0.6
Power (W)
VGS(th) (V)
0.7
0.5
10
0.4
0.3
5
0.2
0.1
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
100
1000
Pulse (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited by R DS(on)*
I D - Drain Current (A)
10
100 µs
1
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
* VGS
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 74957
S-80436-Rev. B, 03-Mar-08
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5
New Product
SiA810DJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
8
12
Power Dissipation (W)
ID - Drain Current (A)
10
8
6
Package Limited
4
6
4
2
2
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 74957
S-80436-Rev. B, 03-Mar-08
New Product
SiA810DJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 74957
S-80436-Rev. B, 03-Mar-08
www.vishay.com
7
New Product
SiA810DJ
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
100
10
I F - Forward Current (A)
I F - Reverse Current (mA)
10
1
20 V
0.1
5V
0.01
0.001
TJ = 150 °C
1
TJ = 25 °C
0.10
0.0001
0.00001
- 50
- 25
0
25
50
75
100
125
0.01
0.0
150
0.1
T J - Junction Temperature (°C)
0.2
0.3
0.4
0.5
VF - Forward Voltage Drop (V)
Reverse Current vs. Junction Temperature
Forward Voltage Drop
CT - Junction Capacitance (pF)
300
240
180
120
60
0
0
4
8
12
16
20
VRS - Reverse Voltage (V)
Capacitance
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Document Number: 74957
S-80436-Rev. B, 03-Mar-08
New Product
SiA810DJ
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
Single Pulse
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Single Pulse
0.1
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74957.
Document Number: 74957
S-80436-Rev. B, 03-Mar-08
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Revision: 02-Oct-12
1
Document Number: 91000