Si5858DU Vishay Siliconix N-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 6 nC SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage IF (A)a 20 0.375 at 1 A 1 APPLICATIONS • Load Switch for Portable Applications - Ideal for Boost Circuits PowerPAK ChipFET Dual 1 2 A 3 A 8 4 S K Marking Code JB 7 XXX Lot Traceability and Date Code G 6 D D 5 K D K 1.9 mm Part # Code G Bottom View S Ordering Information: Si5858DU-T1-GE3 (Lead (Pb)-free and Halogen-free) A N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET) Symbol VDS VKA VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) TC = 25 °C TA = 25 °C Maximum Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Document Number: 73460 S09-2111-Rev. C, 12-Oct-09 IS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C 6a 6a 7.2b, c 5.8b, c 20 6.9 IFM 1.9b, c 1b 7 8.3 5.3 PD 2.3b, c 1.5b, c 7.8 5 IF Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET) ID Limit 20 20 ±8 TJ, Tstg 2.1b, c 1.3b, c - 55 to 150 260 Unit V A W W °C www.vishay.com 1 Si5858DU Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)b, f Maximum Junction-to-Case (Drain) (MOSFET) t≤5s Maximum Junction-to-Ambient (Schottky) t≤5s Symbol Typical Maximum RthJA 45 55 RthJC 12 15 RthJA 49 61 RthJC 13 16 Maximum Junction-to-Case (Drain) (Schottky) Unit °C/W Notes: a. Package limited. b. Surface Mounted on FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions for MOSFETS is 105 °C/W. g. Maximum under Steady State conditions for Schottky is 110 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Forward Transconductancea RDS(on) gfs mV/°C - 2.6 1.0 V VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = 20 V, VGS = 0 V -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 4.4 A Drain-Source On-State Resistancea 17.4 ID = 250 µA VGS(th) Temperature Coefficient V 0.4 - 20 µA A 0.032 0.039 VGS = 2.5 V, ID = 4.1 A 0.037 0.045 VGS = 1.8 V, ID = 1.8 A 0.0455 0.055 VDS = 10 V, ID = 4.4 A 22 VDS = 10 V, VGS = 0 V, f = 1 MHz 100 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 Rg 520 VDS = 10 V, VGS = 8 V, ID = 4.4 A VDS = 10 V, VGS = 4.5 V, ID = 4.4 A td(off) 10.5 16 6 9 0.91 f = 1 MHz VDD = 10 V, RL = 2.8 Ω ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω Ω 1.9 20 30 65 100 40 60 tf 10 15 td(on) 5 10 tr td(off) tf nC 0.7 td(on) tr pF 60 VDD = 10 V, RL = 2.8 Ω ID ≅ 3.6 A, VGEN = 8 V, Rg = 1 Ω 12 20 26 40 8 15 ns Document Number: 73460 S09-2111-Rev. C, 12-Oct-09 Si5858DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 14.8 20 IS = 1.2 A, VGS = 0 V IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 45 70 ns 21 32 nC 29 ns 16 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Maximum Reverse Leakage Current Junction Capacitance Symbol VF Irm CT Test Conditions Typ. Max. IF = 1 A Min. 0.34 0.375 IF = 1 A, TJ = 125 °C 0.255 0.290 VR = 20 V 0.05 0.500 VR = 20 V, TJ = 85 °C 2 20 VR = 20 V, TJ = 125 °C 10 100 VR = 10 V 90 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73460 S09-2111-Rev. C, 12-Oct-09 www.vishay.com 3 Si5858DU Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 VGS = 3 V thru 5 V 8 VGS = 2.5 V I D - Drain Current (A) I D - Drain Current (A) 16 VGS = 2 V 12 VGS = 1.5 V 8 6 4 TC = 125 °C 2 4 25 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 - 55 °C 0 0.0 3.0 0.3 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 800 0.08 VGS = 4.5 V 0.07 600 0.06 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 0.6 0.05 VGS = 2.5 V 0.04 0.03 VGS = 1.8 V Ciss 400 200 0.02 Coss 0.01 Crss 0 0.00 0 4 8 12 16 0 20 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 1.6 ID = 4.4 A 1.4 6 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 VDS = 10 V 4 VDS = 16 V 2 VGS = 4.5 V ID = 4.4 A 1.2 1.0 0.8 0 0 www.vishay.com 4 3 6 9 12 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 73460 S09-2111-Rev. C, 12-Oct-09 Si5858DU Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted R DS(on) - Drain-to-Source On-Resistance (mΩ) 20 TJ = 150 °C I S - Source Current (A) 10 TJ = 25 °C 1 0.08 ID = 4.4 A 0.07 0.06 125 °C 0.05 25 °C 0.04 0.03 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.9 40 0.8 ID = 250 µA 30 Power (W) VGS(th) (V) 0.7 0.6 0.5 0.4 20 10 0.3 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 I DM limited Limited by RDS(on)* ID - Drain Current (A) 10 ID(on) limited 100 µs 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 1s 10 s DC BVDSS limited 0.01 0.1 1 100 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73460 S09-2111-Rev. C, 12-Oct-09 www.vishay.com 5 Si5858DU Vishay Siliconix 15 10 12 8 Power Dissipation (W) I D - Drain Current (A) MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 9 Package Limited 6 6 4 3 2 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73460 S09-2111-Rev. C, 12-Oct-09 Si5858DU Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 87 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 73460 S09-2111-Rev. C, 12-Oct-09 www.vishay.com 7 Si5858DU Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 100 TJ = 150 °C IF - Forward Current (A) IR - Reverse Current (mA) 10 1 20 V 0.1 0.01 10 V TJ = 25 °C 1 0.001 0.0001 - 50 0.1 - 25 0 25 50 75 100 125 150 0 0.1 0.2 0.3 0.4 TJ - Junction Temperature (°C) VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop 0.5 0.6 CT - Junction Capacitance (pF) 600 500 400 300 200 100 0 0 4 8 12 16 20 VKA - Reverse Voltage (V) Capacitance www.vishay.com 8 Document Number: 73460 S09-2111-Rev. C, 12-Oct-09 Si5858DU Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 93 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73460. Document Number: 73460 S09-2111-Rev. C, 12-Oct-09 www.vishay.com 9 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000