PANASONIC XN04382

Composite Transistors
XN04382
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
Unit: mm
For switching/digital circuits
+0.2
2.8 –0.3
+0.25
Ratings
Unit
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
IC
100
mA
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Collector current
IC
–500
mA
Total power dissipation
PT
300
mW
Overall Junction temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
+0.1
1.45±0.1
0.5 –0.05
+0.1
0.16–0.06
0.95
0.95
+0.2
1.9±0.1
+0.1
Symbol
Storage temperature
3
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
(Ta=25˚C)
Collector to base voltage
Tr2
4
0 to 0.05
0.4±0.2
■ Absolute Maximum Ratings
Tr1
2
0.1 to 0.3
UN1213+UN1121
Parameter
5
0.8
■ Basic Part Number of Element
●
2.9 –0.05
+0.2
Two elements incorporated into one package.
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
1.1–0.1
●
0.65±0.15
1
6
■ Features
●
1.5 –0.05
0.3 –0.05
0.65±0.15
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: HL
Internal Connection
6
Tr1
5
4
1
2
Tr2
3
1
Composite Transistors
■ Electrical Characteristics
●
XN04382
(Ta=25˚C)
Tr1
Parameter
Collector to base voltage
Collector to emitter voltage
Symbol
Conditions
min
VCBO
IC = 10µA, IE = 0
50
50
typ
max
Unit
V
VCEO
IC = 2mA, IB = 0
ICBO
VCB = 50V, IE = 0
0.1
ICEO
VCE = 50V, IB = 0
0.5
µA
IEBO
VEB = 6V, IC = 0
0.1
mA
Forward current transfer ratio
hFE
VCE = 10V, IC = 5mA
Collector to emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 0.3mA
0.25
V
Output voltage high level
VOH
VCC = 5V, VB = 0.5V, RL = 1kΩ
Output voltage low level
VOL
VCC = 5V, VB = 3.5V, RL = 1kΩ
0.2
V
kΩ
Collector cutoff current
Emitter cutoff current
Input resistance
R1
Resistance ratio
R1/R2
Transition frequency
fT
●
V
µA
80
4.9
V
–30%
47
+30%
0.8
1.0
1.2
VCB = 10V, IE = –2mA, f = 200MHz
150
MHz
Tr2
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–50
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
Collector cutoff current
ICBO
VCB = –50V, IE = 0
–1
µA
ICEO
VCE = –50V, IB = 0
–1
µA
–5
mA
– 0.25
V
Emitter cutoff current
IEBO
VEB = –6V, IC = 0
Forward current transfer ratio
hFE
VCE = –10V, IC = –100mA*
Collector to emitter saturation voltage
VCE(sat)
IC = –100mA, IB = – 5mA
Output voltage high level
VOH
VCC = –5V, VB = – 0.5V, RL = 500Ω
Output voltage low level
VOL
VCC = –5V, VB = –3.5V, RL = 500Ω
Input resistance
R1
Resistance ratio
R1/R2
Transition frequency
fT
40
–4.9
–30%
0.8
VCB = –10V, IE = 50mA, f = 200MHz*
V
– 0.2
V
2.2
+30%
kΩ
1.0
1.2
200
MHz
* Pulse measurement
2
Composite Transistors
XN04382
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
Characteristics charts of Tr1
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
IB=1.0mA
120
0.9mA
0.8mA
0.7mA
0.6mA
100
0.5mA
0.4mA
80
0.3mA
60
0.2mA
40
20
0.1mA
0
2
4
6
8
10
12
IC/IB=10
30
10
3
1
0.3
0.1
0.03
Collector to emitter voltage VCE (V)
–25˚C
3
10
Ta=75˚C
300
25˚C
250
–25˚C
200
150
100
50
30
100
1
(mA)
3
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
1
Collector current IC
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
350
0
0.3
Cob — VCB
6
Ta=75˚C
25˚C
0.01
0.1
0
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
160
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
100
VCB (V)
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
100
Output current IO (mA)
3
Composite Transistors
XN04382
Characteristics charts of Tr2
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
–200
IB=–1.0mA
–160
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–120
–0.4mA
–80
–0.3mA
–0.2mA
–40
–0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
–100
0
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
Collector to emitter voltage VCE (V)
–25˚C
–3
–10
–30
200
100
0
–1
–100 –300 –1000
–10000
25˚C
–3
6
4
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
8
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
2
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
4
Ta=75˚C
IO — VIN
f=1MHz
IE=0
Ta=25˚C
10
300
Collector current IC (mA)
Cob — VCB
12
VCE=–10V
–25˚C
–0.01
–1
–12
hFE — IC
400
Forward current transfer ratio hFE
–240
–30
–100
VCB (V)
–1
–0.4
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100