D44H Series (NPN), D45H Series (PNP) Preferred Devices Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low Collector−Emitter Saturation Voltage http://onsemi.com 10 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS VCE(sat) = 1.0 V (Max) @ 8.0 A • Fast Switching Speeds • Complementary Pairs Simplifies Designs • Pb−Free Packages are Available* MARKING DIAGRAM 4 MAXIMUM RATINGS Rating Collector−Emitter Voltage D44H8, D45H8 D44H11, D45H11 Emitter Base Voltage Symbol Vdc 1 60 80 VEB IC Total Power Dissipation @ TC = 25°C @ TA = 25°C PD TO−220AB CASE 221A−09 STYLE 1 Unit VCEO Collector Current − Continuous − Peak (Note 1) Operating and Storage Junction Temperature Range Value 5.0 2 3 Vdc D4xHyy = Device Code x = 4 or 5 yy = 8 or 11 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package Adc 10 20 W 70 2.0 TJ, Tstg °C −55 to +150 ORDERING INFORMATION Device THERMAL CHARACTERISTICS D4xHyyG AYWW Package Shipping † TO−220 50 Units/Rail Symbol Max Unit D44H8 Thermal Resistance, Junction−to−Case RqJC 1.8 _C/W D44H8G 50 Units/Rail Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W TO−220 (Pb−Free) TO−220 50 Units/Rail TL 275 _C D44H11 Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TO−220 (Pb−Free) 50 Units/Rail TO−220 50 Units/Rail D45H8G TO−220 (Pb−Free) 50 Units/Rail D45H11 TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail Characteristic Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Width v 6.0 ms, Duty Cycle v 50%. D44H11G D45H8 D45H11G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 9 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: D44H/D D44H Series (NPN), ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 60 80 − − − − Vdc Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 10 mA Emitter Cutoff Current (VEB = 5.0 Vdc) IEBO − − 10 mA 60 40 − − − − − − 1.0 − − 1.5 − − 90 160 − − − − 50 40 − − − − 300 135 − − − − 500 500 − − − − 140 100 − − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0 Adc) D44H8, D45H8 D44H11, D45H11 ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 2.0 Adc) (VCE = 1.0 Vdc, IC = 4.0 Adc) hFE Collector−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.4 Adc) VCE(sat) Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.8 Adc) VBE(sat) − Vdc Vdc DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1.0 MHz) Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) Ccb D44H Series D45H Series pF fT D44H Series D45H Series MHz SWITCHING TIMES Delay and Rise Times (IC = 5.0 Adc, IB1 = 0.5 Adc) Storage Time (IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc) Fall Time (IC = 5.0 Adc, IB1 = 102 = 0.5 Adc) td + tr D44H Series D45H Series ns ts D44H Series D45H Series ns tf D44H Series D45H Series http://onsemi.com 2 ns D44H Series (NPN), 1000 1000 VCE = 1 V 25°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V 125°C −40°C 100 10 125°C 25°C 100 −40°C 10 0.01 0.1 1 10 0.01 10 IC, COLLECTOR CURRENT (AMPS) Figure 1. D44H11 DC Current Gain Figure 2. D45H11 DC Current Gain 1000 VCE = 5 V VCE = 5 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1 IC, COLLECTOR CURRENT (AMPS) 1000 25°C 125°C −40°C 100 10 125°C 25°C 100 −40°C 10 0.01 0.1 1 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. D44H11 DC Current Gain Figure 4. D45H11 DC Current Gain 0.40 0.6 VCE(sat) @ IC/IB = 10 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 0.1 0.35 0.30 −40°C 0.25 0.20 25°C 0.15 125°C 0.10 0.05 0 VCE(sat) @ IC/IB = 10 0.5 0.4 −40°C 0.3 25°C 125°C 0.2 0.1 0 0.1 1 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. D44H11 ON−Voltage Figure 6. D45H11 ON−Voltage http://onsemi.com 3 10 D44H Series (NPN), 1.4 VBE(sat) @ IC/IB = 10 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 1.2 −40°C 1.0 0.8 125°C 0.6 25°C 0.4 0.2 0 −40°C 1.0 0.8 125°C 0.6 25°C 0.4 0.2 0 0.1 1 10 0.1 Figure 7. D44H11 ON−Voltage Figure 8. D45H11 ON−Voltage 50 30 20 1.0 ms 100 ms 10 10 ms TC ≤ 70° C dc DUTY CYCLE ≤ 50% 1.0 1.0 ms 0.5 0.3 0.2 D44H/45H8 D44H/45H10,11 TA TC 3.0 60 2.0 40 TC 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) TA 1.0 20 0 0.1 1.0 0 0 20 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Maximum Rated Forward Bias Safe Operating Area 1.0 0.7 0.5 60 80 100 120 T, TEMPERATURE (°C) 140 160 Figure 10. Power Derating 0.2 0.2 0.1 0.1 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 40 D = 0.5 0.3 0.07 0.05 10 IC, COLLECTOR CURRENT (AMPS) 100 5.0 3.0 2.0 1 IC, COLLECTOR CURRENT (AMPS) PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMPS) VBE(sat) @ IC/IB = 10 1.2 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) Figure 11. Thermal Response http://onsemi.com 4 20 50 100 200 500 1.0 k D44H Series (NPN), PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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