isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors D45H Series DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speeds ·Complement to Type D44H Series APPLICATIONS ·Designed for general pourpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEO VEBO PARAMETER Collector-Emitter Voltage VALUE D45H8 -60 D45H10,11 -80 UNIT V Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A PC Collector Power Dissipation @TC=25℃ -50 W Tj Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors D45H Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS D44H10 VCE(sat) MIN TYP UNIT -1 V IC= -8A ;IB= -0.8 A Collector-Emitter Saturation Voltage D44H8,11 MAX IC= -8A ;IB= -0.4 A Base-Emitter Saturation Voltage IC= -8A ;IB= -0.8 A -1.5 V ICES Collector Cutoff Current VCE=Rated VCEO; -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μA VBE(sat) D44H10 hFE-1 DC Current Gain 35 IC= -2A ; VCE= -1V D44H8,11 60 D44H10 hFE-2 DC Current Gain 20 IC= -4A ; VCE= -1V D44H8,11 COB fT 40 Output Capacitance VCB= -10V,f= 0.1MHz 130 pF Current-Gain—Bandwidth Product IC=-0.5A;VCE=-10V;ftest=20MHz 50 MHz 0.5 μs 0.14 μs Switching Times ts Storage Time tf Fall Time IC= -5A; IB1= -IB2= -0.5A VCC= 20V isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Website：www.iscsemi.cn isc Product Specification D45H Series