D44H Series (NPN), D45H Series (PNP) Preferred Devices Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features •Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 V (Max) @ 8.0 A http://onsemi.com 10 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS •Fast Switching Speeds •Complementary Pairs Simplifies Designs •Pb-Free Packages are Available* MARKING DIAGRAM 4 MAXIMUM RATINGS Rating Collector-Emitter Voltage D44H8, D45H8 D44H11, D45H11 Emitter Base Voltage Symbol Unit VCEO VEB IC Total Power Dissipation @ TC = 25°C @ TA = 25°C PD 1 5.0 2 3 D4xHyy = Device Code x = 4 or 5 yy = 8 or 11 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package Adc 10 20 W 70 2.0 TJ, Tstg °C -55 to +150 ORDERING INFORMATION Device Symbol Shipping† TO-220 50 Units/Rail Unit D44H8 D44H8G TO-220 (Pb-Free) 50 Units/Rail D44H11 TO-220 50 Units/Rail TO-220 (Pb-Free) 50 Units/Rail TO-220 50 Units/Rail D45H8G TO-220 (Pb-Free) 50 Units/Rail D45H11 TO-220 50 Units/Rail TO-220 (Pb-Free) 50 Units/Rail RqJC 1.8 °C/W Thermal Resistance, Junction-to-Ambient RqJA 62.5 °C/W Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 275 °C D44H11G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Width v 6.0 ms, Duty Cycle v 50%. D45H8 D45H11G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. November, 2007 - Rev. 10 Package Max Thermal Resistance, Junction-to-Case © Semiconductor Components Industries, LLC, 2007 D4xHyyG AYWW Vdc THERMAL CHARACTERISTICS Characteristic TO-220AB CASE 221A-09 STYLE 1 Vdc 60 80 Collector Current - Continuous - Peak (Note 1) Operating and Storage Junction Temperature Range Value 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: D44H/D D44H Series (NPN), ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 60 80 - - Vdc Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES - - 10 mA Emitter Cutoff Current (VEB = 5.0 Vdc) IEBO - - 10 mA 60 40 - - - - 1.0 - - 1.5 - 90 160 - - 50 40 - - 300 135 - - 500 500 - - 140 100 - OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0 Adc) D44H8, D45H8 D44H11, D45H11 ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 2.0 Adc) (VCE = 1.0 Vdc, IC = 4.0 Adc) hFE Collector-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.4 Adc) VCE(sat) Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.8 Adc) VBE(sat) - Vdc Vdc DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1.0 MHz) Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) Ccb D44H Series D45H Series pF fT D44H Series D45H Series MHz SWITCHING TIMES Delay and Rise Times (IC = 5.0 Adc, IB1 = 0.5 Adc) Storage Time (IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc) Fall Time (IC = 5.0 Adc, IB1 = 102 = 0.5 Adc) td + tr D44H Series D45H Series ns ts D44H Series D45H Series ns tf D44H Series D45H Series http://onsemi.com 2 ns D44H Series (NPN), 1000 1000 VCE = 1 V 25°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V 125°C -40°C 100 10 125°C 25°C 100 -40°C 10 0.01 0.1 1 10 0.01 10 IC, COLLECTOR CURRENT (AMPS) Figure 1. D44H11 DC Current Gain Figure 2. D45H11 DC Current Gain 1000 VCE = 5 V VCE = 5 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1 IC, COLLECTOR CURRENT (AMPS) 1000 25°C 125°C -40°C 100 10 125°C 25°C 100 -40°C 10 0.01 0.1 1 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. D44H11 DC Current Gain Figure 4. D45H11 DC Current Gain 0.40 0.6 VCE(sat) @ IC/IB = 10 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 0.1 0.35 0.30 -40°C 0.25 0.20 25°C 0.15 125°C 0.10 0.05 0 VCE(sat) @ IC/IB = 10 0.5 0.4 -40°C 0.3 25°C 125°C 0.2 0.1 0 0.1 1 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. D44H11 ON-Voltage Figure 6. D45H11 ON-Voltage http://onsemi.com 3 10 D44H Series (NPN), 1.4 VBE(sat) @ IC/IB = 10 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 1.2 -40°C 1.0 0.8 125°C 0.6 25°C 0.4 0.2 0 -40°C 1.0 0.8 125°C 0.6 25°C 0.4 0.2 0 0.1 1 10 0.1 Figure 7. D44H11 ON-Voltage Figure 8. D45H11 ON-Voltage PD, POWER DISSIPATION (WATTS) 1.0 ms 100 ms 10 10 ms TC ≤ 70° C dc DUTY CYCLE ≤ 50% 1.0 1.0 ms 0.5 0.3 0.2 D44H/45H8 D44H/45H10,11 TA TC 3.0 60 2.0 40 TC 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TA 1.0 20 0 0.1 1.0 0 0 20 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Maximum Rated Forward Bias Safe Operating Area 1.0 0.7 0.5 60 80 100 120 T, TEMPERATURE (°C) 140 160 Figure 10. Power Derating 0.2 0.2 0.1 0.1 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 40 D = 0.5 0.3 0.07 0.05 10 IC, COLLECTOR CURRENT (AMPS) 50 30 20 5.0 3.0 2.0 1 IC, COLLECTOR CURRENT (AMPS) 100 IC, COLLECTOR CURRENT (AMPS) VBE(sat) @ IC/IB = 10 1.2 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) Figure 11. Thermal Response http://onsemi.com 4 20 50 100 200 500 1.0 k D44H Series (NPN), PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AE -TB SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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