NTGS3443B Power MOSFET -20 V, -4.2 A, Single P-Channel, TSOP-6 Features •Low RDS(on) in TSOP-6 Package •2.5 V Gate Rating •Fast Switching •This is a Pb-Free Device http://onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 60 mW @ -4.5 V -3.7 A 90 mW @ -2.7 V -3.1 A 100 mW @ -2.5 V -3.0 A Applications •Optimized for Battery and Load Management Applications in -20 V Portable Equipment •Li Ion Battery Linear Mode Charging •High Side Load Switch •HDD Switching Circuits, Camera Phone, etc. P-Channel 1 2 5 6 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS -20 V Gate-to-Source Voltage VGS $12 V ID -3.7 Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C -2.7 tv5s TA = 25°C -4.2 Steady State PD Power Dissipation (Note 2) Pulsed Drain Current MARKING DIAGRAM 1.25 W TSOP-6 CASE 318G STYLE 1 1.6 TA = 25°C Steady State 4 A TA = 25°C tv5s Continuous Drain Current (Note 2) 3 ID TA = 85°C TA = 25°C tp = 10 ms Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8” from case for 10 s) -2.7 A -2.0 PD 0.7 W IDM -15 A TJ, TSTG -55 to 150 °C TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size. (Cu area = 1.127 in sq [2 oz] including traces) 2. Surface-mounted on FR4 board using the minimum recommended pad size. (Cu area = 0.0775 in sq) 1 SB MG G 1 SB = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT Drain Drain Source 6 5 4 1 2 3 Drain Drain Gate ORDERING INFORMATION Device NTGS3443BT1G Package Shipping† TSOP-6 3000 / Tape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 November, 2007 - Rev. 0 1 Publication Order Number: NTGS3443B/D NTGS3443B THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction-to-Ambient – Steady State (Note 3) Parameter RqJA 100 Junction-to-Ambient – t v 5 s (Note 3) RqJA 80 Junction-to-Ambient – Steady State (Note 4) RqJA 190 Unit °C/W 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 mA -20 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ID = -250 mA, Reference 25°C IDSS VGS = 0 V, VDS = -20 V V -15 mV/°C TJ = 25°C -1.0 TJ = 70°C -5.0 IGSS VDS = 0 V, VGS = ±12 V VGS(TH) VGS = VDS, ID = -250 mA mA $0.1 mA -1.4 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance VGS(TH)/TJ -0.6 3.3 RDS(on) gFS mV/°C VGS = -4.5 V, ID = -3.7 A 45 60 VGS = -2.7 V, ID = -3.1 A 65 90 VGS = -2.5 V, ID = -3.0 A 70 100 VDS = -10 V, ID =-3.7 A 7.0 S 819 pF mW CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 103 Total Gate Charge QG(TOT) 8.0 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 2.4 RG 11 Gate Resistance VGS = 0 V, f = 1 MHz, VDS = -10 V VGS = -4.5 V, VDS = -10 V; ID = -3.7 A 157 11 nC 0.6 1.7 W SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) 10 15 tr 7.0 11 47 70 25 40 -0.8 -1.2 V 15 30 ns VGS = -4.5 V, VDD = -10 V, ID = -1.0 A, RG = 6.0 W td(OFF) tf ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = -1.7 A Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = -1.7 A 5. Pulse Test: pulse width v 300 ms, duty cycle v 2% 6. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 TJ = 25°C NTGS3443B TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) -4.5 V 20 -3.5 V TJ = 25°C -3 V -4 V 16 -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) 20 -2.5 V 12 8 -2 V 4 -1.5 V 1 3 4 5 10 8 6 0.12 0.08 0.04 0.00 1 2 1.5 3 2.5 1.5 2.5 2 3 3.5 4 4.5 5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0.20 TJ = 25°C 0.18 0.16 0.14 VGS = -2.5 V 0.12 VGS = -2.7 V 0.10 0.08 VGS = -4.5 V 0.06 0.04 0.02 0.00 4 0 8 12 16 20 -ID, DRAIN CURRENT (AMPS) Figure 4. On-Resistance vs. Drain Current and Gate Voltage Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.5 1200 ID = -3.7 A VGS = -4.5 V 1000 C, CAPACITANCE (pF) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TJ = -55°C Figure 2. Transfer Characteristics 0.16 1.3 1.2 1.1 1.0 0.9 VGS = 0 V TJ = 25°C f = 1 MHz Ciss 800 600 400 Coss 200 0.8 0.7 -50 TJ = 125°C 2 Figure 1. On-Region Characteristics ID = -3.7 A TJ = 25°C 1.4 TJ = 25°C 4 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0.20 1 14 12 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 2 16 0 0.5 0 0 VDS = -5 V 18 Crss 0 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 20 NTGS3443B 12 QT 6 10 -VGS -VDS 5 8 4 6 3 QGS QGD 4 2 VDS = -10 V ID = -3.7 A TJ = 25°C 1 2 0 0 0 2 6 4 30 -I S, SOURCE CURRENT (AMPS) 7 -V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) -V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 TJ = 25°C TJ = 150°C 1.0 0.0 10 8 VGS = 0 V 0.2 0.4 0.8 0.6 1.0 1.4 1.2 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) QG, TOTAL GATE CHARGE (nC) Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current 1.4 60 ID = -250 mA 1.2 50 POWER (WATTS) 0.8 0.6 0.4 0.0 -50 40 30 20 10 0.2 -25 0 25 50 75 100 125 0 0.001 150 0.1 0.01 1 10 100 SINGLE PULSE TIME (s) TJ, JUNCTION TEMPERATURE (°C) Figure 10. Single Pulse Maximum Power Dissipation Figure 9. Threshold Voltage 100 -ID, DRAIN CURRENT (A) -VGS(th) (V) 1.0 10 100 ms 1 ms 1 10 ms VGS = -12 V SINGLE PULSE 0.1 TC = 25°C RDS(on) LIMIT dc Thermal Limit Package Limit 0.01 0.1 1 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 1000 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE NORMALIZED (°C/W) NTGS3443B 1 Duty Cycle = 0.5 0.2 0.1 P(pk) 0.1 0.05 0.02 0.01 0.01 0.0001 Test Type = 1 sq in 2 oz RqJA = 1 sq in 2 oz t1 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.001 0.01 0.1 PULSE TIME (s) 1 Figure 12. FET Thermal Response http://onsemi.com 5 10 100 1000 NTGS3443B PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 5 4 2 3 E HE 1 b e q c A 0.05 (0.002) L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° - MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 DIM A A1 b c D E e L HE q 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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