ONSEMI NTGS5120PT1G

NTGS5120P
Power MOSFET
−60 V, −2.9 A, Single P−Channel, TSOP−6
Features
• 60 V BVds, Low RDS(on) in TSOP−6 Package
• 4.5 V Gate Rating
• This is a Pb−Free Device
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Applications
V(BR)DSS
• High Side Load Switch
• Power Switch for Printers, Communication Equipment
RDS(ON) MAX
ID MAX
111 mW @ −10 V
−60 V
−2.9 A
142 mW @ −4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−60
V
Gate−to−Source Voltage
VGS
$20
V
ID
−2.5
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
−2.0
tv5s
TA = 25°C
−2.9
Steady
State
PD
Power Dissipation
(Note 2)
Pulsed Drain Current
3
1.1
4
W
1.4
TA = 25°C
Steady
State
1 2 5 6
A
TA = 25°C
tv5s
Continuous Drain
Current (Note 2)
P−Channel
ID
TA = 85°C
TA = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
−1.8
MARKING
DIAGRAM
A
−1.3
PD
0.6
W
IDM
−8
A
TJ,
TSTG
−55 to
150
°C
TL
260
°C
TSOP−6
CASE 318G
STYLE 1
1
P6 MG
G
1
P6
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
PIN ASSIGNMENT
Drain Drain Source
6 5 4
1
2
3
Drain Drain Gate
ORDERING INFORMATION
Device
NTGS5120PT1G
Package
Shipping†
TSOP−6 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
June, 2008 − Rev. P0
1
Publication Order Number:
NTGS5120P/D
NTGS5120P
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Ambient – Steady State (Note 3)
Parameter
RqJA
102
Junction−to−Ambient – t = 5 s (Note 3)
RqJA
77.6
Junction−to−Ambient – Steady State (Note 4)
RqJA
200
Unit
°C/W
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = −250 mA
−60
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
VGS = 0 V,
VDS = −48 V
IGSS
V
TJ = 25°C
−1.0
TJ = 125°C
−5.0
mA
VDS = 0 V, VGS = ±12 V
$100
nA
VDS = 0 V, VGS = ±20 V
$200
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
−3.0
V
Drain−to−Source On Resistance
RDS(on)
VGS = −10 V, ID = −2.9 A
72
111
mW
VGS = −4.5 V, ID = −2.5 A
88
142
VDS = −5.0 V, ID = −6.0 A
10.1
S
942
pF
Forward Transconductance
gFS
−1.0
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
48
Total Gate Charge
QG(TOT)
18.1
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
3.6
td(ON)
8.7
VGS = 0 V, f = 1 MHz, VDS = −30 V
VGS = −10 V, VDS = −30 V;
ID = −2.9 A
72
nC
1.2
2.7
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
VGS = −10 V, VDS = −30 V,
ID = −1.0 A, RG = 6.0 W
td(OFF)
tf
ns
4.9
38
12.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
Reverse Recovery Charge
VGS = 0 V,
IS = −0.9 A
TJ = 25°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −0.9 A
ta
QRR
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
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2
−0.75
−1.0
V
18.3
ns
15.5
ns
15.1
nC
NTGS5120P
TYPICAL CHARACTERISTICS
−2.8 V
2.5
−3.2 V
−ID, DRAIN CURRENT (A)
−10 V
5.0
TJ = 25°C
3.0
−4.5 V
−2.6 V
2.0
1.5
1.0
−2.4 V
0.5
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−3.0 V
VGS = −2.2 V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.0
2.0
TJ = −55°C
1.0
TJ = 25°C
TJ = 125°C
0.4
0.9
1.4
1.9
2.4
2.9
3.4
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = −2.9 A
TJ = 25°C
0.18
0.16
0.14
0.12
0.10
0.08
0.06
2.0
4.0
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.20
0.04
VDS ≥ −10 V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (A)
3.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
−VGS, GATE−TO−SOURCE VOLTAGE (V)
0.10
3.9
TJ = 25°C
VGS = −4.5 V
0.09
0.08
VGS = −10 V
0.07
0.06
0.05
0.04
1.0
2.0
3.0
4.0
5.0
6.0
7.0
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
VGS = 0 V
ID = −2.9 A
VGS = −4.5 V
1.6
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
1.4
1.2
1.0
TJ = 150°C
1000
TJ = 125°C
100
0.8
0.6
−50
−25
0
25
50
75
100
125
150
10
10
TJ, JUNCTION TEMPERATURE (°C)
20
30
40
50
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NTGS5120P
1300
1200
1100
1000
900
800
700
600
500
400
300 Coss
200
100
0 Crss
0
Ciss
10
20
−VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
40
30
8.0
7.0
6.0
5.0
4.0
3.0
Qgd
Qgs
TJ = 25°C
ID = −2.9 A
Vds = −30 V
2.0
1.0
0
0
2.0
4.0
6.0
8.0
10
12
14
16
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
18
1.4
−IS, SOURCE CURRENT (A)
VDD = −30 V
ID = −1.0 A
VGS = −10 V
t, TIME (ns)
Qt
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
td(off)
100
tf
td(on)
10
tr
1.0
10
9.0
1.0
10
1.0
0.8
0.6
0.4
0.2
0
100
VGS = 0 V
TJ = 25°C
1.2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTGS5120P
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
6
HE
1
5
4
2
3
E
b
e
c
A
0.05 (0.002)
q
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
DIM
A
A1
b
c
D
E
e
L
HE
q
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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5
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NTGS5120P/D