NTGD4169F Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6 Features • • • • • • Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device Applications • DC−DC Converters • Portable Devices like PDA’s, Cellular Phones, and Hard Drives http://onsemi.com N−CHANNEL MOSFET V(BR)DSS 30 V Symbol Value Unit VDSS 30 V Gate−to−Source Voltage VGS ±12 V ID 2.6 1.9 A Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C t≤5 s TA = 25°C Steady State TA = 25°C PD Pulsed Drain Current 125 mW @ 2.5 V 2.2 A VF Max IF Max 30 V 0.53 V 1.0 A A G S W 0.9 K N−Channel MOSFET 1.1 IDM 8.6 A TJ, TSTG −25 to 150 °C Source Current (Body Diode) IS 0.9 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C tp = 10 ms Operating Junction and Storage Temperature SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit VRRM 30 V DC Blocking Voltage VR 30 V Average Rectified Forward Current IF 1 A Symbol Value Unit Junction−to−Ambient – Steady State (Note 1) RqJA 140 Junction−to−Ambient – t ≤ 5 s (Note 1) RqJA 110 Peak Repetitive Reverse Voltage THERMAL RESISTANCE RATINGS Parameter © Semiconductor Components Industries, LLC, 2008 1 Schottky Diode MARKING DIAGRAM 1 TSOP−6 CASE 318G STYLE 15 TD MG G 1 TD = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTION A 1 6 K °C/W S 2 5 N/C °C/W G 3 4 D Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). May, 2008 − Rev. 1 2.6 A VR Max 2.9 t≤5 s 90 mW @ 4.5 V D Drain−to−Source Voltage N−Channel Continuous Drain Current (Note 1) ID Max SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter RDS(on) Max (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Publication Order Number: NTGD4169F/D NTGD4169F MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Characteristic Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 21.4 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 85°C 10 IGSS VDS = 0 V, VGS = ±12 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 1.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS 0.5 0.9 −3.4 mV/°C VGS = 4.5 V ID = 2.6 A 52 90 VGS = 2.5 V ID = 2.2 A 67 125 VDS = 15 V, ID = 2.6 A 2.6 mW S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance VGS = 0 V, f = 1.0 MHz, VDS = 15 V CRSS 295 48 27 Total Gate Charge QG(TOT) 3.7 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 0.8 td(ON) 7.0 VGS = 4.5 V, VDS = 15 V, ID = 2.0 A pF 5.5 0.6 nC 0.9 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W tf 4.0 ns 14 2.0 DRAIN−TO−SOURCE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Ta Discharge Time Tb Reverse Recovery Time VGS = 0 V IS = 0.9 A TJ = 25°C 0.7 1.2 V 8.0 VGS = 0 V, dIS/dt = 100 A/ms, IS = 0.9 A QRR 5.0 3.0 3.0 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns nC NTGD4169F SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Conditions Typ Max Unit Maximum Instantaneous Forward Voltage VF IF = 0.5 A 0.41 0.45 V IF = 1.0 A 0.46 0.53 Maximum Instantaneous Reverse Current IR VR = 30 V 7.3 20 VR = 20 V 2.5 8.0 Typ Max Parameter Min mA SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise noted) Symbol Test Conditions Maximum Instantaneous Forward Voltage Parameter VF IF = 0.5 A Min 0.35 IF = 1.0 A 0.41 Maximum Instantaneous Reverse Current IR VR = 30 V 0.4 VR = 20 V 0.17 Unit V mA SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise noted) Parameter Symbol Maximum Instantaneous Forward Voltage VF Maximum Instantaneous Reverse Current IR Test Conditions Min Typ IF = 0.5 A 0.31 IF = 1.0 A 0.39 VR = 30 V 4.4 VR = 20 V 1.6 Max Unit V mA SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Capacitance Symbol Test Conditions C VR = 10 V, f = 1.0 MHz Min Typ Max 28 Unit pF ORDERING INFORMATION Device NTGD4169FT1G Package Shipping† TSOP−6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 NTGD4169F TYPICAL CHARACTERISTICS N−CHANNEL VGS = 4.5 V 3.5 V 2.5 V 7.0 2.0 V 6.0 5.0 4.0 3.0 2.0 1.5 V 1.0 0 7.0 6.0 5.0 4.0 3.0 −55°C 2.0 125°C 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TJ = 25°C 0.12 ID = 2.6 A 0.10 0.08 0.06 0.04 0.02 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGS, GATE VOLTAGE (V) 2 2.25 2.5 TJ = 25°C 0.09 0.08 VGS = 2.5 V 0.07 0.06 VGS = 4.5 V 0.05 0.04 0.03 0.02 0 1.0 2.0 3.0 4.0 5.0 6.0 1.6 350 1.3 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 9.0 150 TJ = 25°C VGS = 0 V f = 1 MHz CISS 300 250 200 150 100 COSS 50 0.7 0 8.0 ID, DRAIN CURRENT (A) 400 ID = 2.6 A VGS = 4.5 V −25 7.0 Figure 4. On−Resistance vs. Drain Current and Temperature C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE 1.75 0.10 Figure 3. On−Region vs. Gate−To−Source Voltage 0.6 −50 1.5 Figure 2. Transfer Characteristics 0.14 1.4 1.25 Figure 1. On−Region Characteristics 0.16 1.5 1 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.18 0 1.0 0 0.75 25°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.20 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS = 5 V 8.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 8.0 9.0 TJ = 25°C ID, DRAIN CURRENT (A) 9.0 0 CRSS 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 4 30 16 QT 14 4 12 VDS 3 2 10 VGS QGD QGS 8 6 ID = 2.0 A TJ = 25°C VDS = 15 V 1 4 2 0 0 0 1 10 2 3 IS, SOURCE CURRENT (A) 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) NTGD4169F TJ = 150°C TJ = 25°C 0.1 0.3 4 0.4 0.5 0.6 0.7 0.8 0.9 1.0 QG, TOTAL GATE CHARGE (nC) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 7. Gate−to−Source and Drain−to−Source Voltage versus Total Charge Figure 8. Diode Forward Voltage versus Current 1.1 1.1 40 1.2 ID = 250 mA 30 1.0 POWER (W) 0.9 0.8 0.7 20 10 0.6 0.5 0.4 −50 −25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ, JUNCTION TEMPERATURE (°C) SINGLE PULSE TIME (s) Figure 9. Threshold Voltage Figure 10. Single Pulse Maximum Power Dissipation 100 ID, DRAIN CURRENT (A) VGS(th) (V) 1.0 10 VGS = −10 V Single Pulse TA = 25°C 100 ms 1 ms 1 10 ms 0.1 0.01 0.1 RDS(on) Limit Thermal Limit Package Limit dc 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 100 1000 NTGD4169F 1 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE NORMALIZED Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 20 30 t, TIME (s) Figure 12. FET Thermal Response 10 1 100E−3 TJ = 125°C IR, REVERSE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) TYPICAL CHARACTERISTICS SCHOTTKY 25°C −55°C 0.3 0.4 0.5 0.6 0.7 TJ = 125°C 1E−3 TJ = 85°C 100E−6 85°C 0.1 0.2 10E−3 0.8 0.9 1.0 10E−6 TJ = 25°C 1E−6 100E−9 0 10 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 13. Typical Forward Voltage Figure 14. Typical Reverse Current http://onsemi.com 6 NTGD4169F PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b DIM A A1 b c D E e L HE q e c A 0.05 (0.002) q L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 15: PIN 1. ANODE 2. SOURCE 3. GATE 4. DRAIN 5. N/C 6. CATHODE SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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