NTZD3154N Small Signal MOSFET 20 V, 540 mA, Dual N−Channel Features • • • • • Low RDS(on) Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm ESD Protected Gate These are Pb−Free Devices http://onsemi.com V(BR)DSS 400 mW @ 4.5 V 500 mW @ 2.5 V 20 540 mA 700 mW @ 1.8 V Applications • • • • ID Max (Note 1) RDS(on) Typ Load/Power Switches Power Supply Converter Circuits Battery Management Cell Phones, Digital Cameras, PDAs, Pagers, etc. D1 D2 G1 G2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±6.0 V 540 mA Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) TA = 25°C TA = 85°C Steady State Continuous Drain Current (Note 1) tv5s Power Dissipation (Note 1) TA = 25°C TA = 85°C tv5s Pulsed Drain Current ID PD ID PD 390 250 mW 570 mA mW IDM 1.5 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 350 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C tp = 10 ms Operating Junction and Storage Temperature THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t v 5 s (Note 1) Symbol RqJA Max Unit 500 °C/W 447 March, 2006 − Rev. 1 S2 MARKING DIAGRAM 6 1 SOT−563−6 CASE 463A TV M G TV M G G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) PINOUT: SOT−563 S1 1 6 D1 G1 2 5 G2 3 4 S2 D2 Top View Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu. area = 1.127 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2006 S1 410 280 N−Channel MOSFET 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: NTZD3154N/D NTZD3154N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.) Parameter Symbol Test Condition Min Typ Max Unit V(BR)DSS VGS = 0 V, ID = 250 mA 20 − − V V(BR)DSS/TJ − − 14 − mV/°C TJ = 25°C − − 1.0 mA TJ = 125°C − − 5.0 − "5.0 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V VDS = 16 V IGSS VDS = 0 V, VGS = "4.5 V − VGS(TH) VGS = VDS, ID = 250 mA 0.45 − 1.0 V VGS(TH)/TJ − − 2.0 − mV/°C VGS = 4.5 V, ID = 540 mA − 0.4 0.55 W VGS = 2.5 V, ID = 500 mA − 0.5 0.7 VGS = 1.8 V, ID = 350 mA − 0.7 0.9 VDS = 10 V, ID = 540 mA − 1.0 − S − 80 150 pF − 13 25 mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS − 10 20 Total Gate Charge QG(TOT) − 1.5 2.5 Threshold Gate Charge QG(TH) − 0.1 − Gate−to−Source Charge QGS − 0.2 − Gate−to−Drain Charge QGD − 0.35 − − 6.0 − − 4.0 − − 16 − − 8.0 − TJ = 25°C − 0.7 1.2 TJ = 125°C − 0.6 − VGS = 0 V, dISD/dt = 100 A/ms, IS = 350 mA − 6.5 − VGS = 0 V, f = 1.0 MHz, VDS = 16 V VGS = 4.5 V, VDS = 10 V; ID = 540 mA nC SWITCHING CHARACTERISTICS, VGS = V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) VGS = 4.5 V, VDD = 10 V, ID = 540 mA, RG = 10 W tf ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VGS = 0 V, IS = 350 mA VSD tRR 2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces). 3. Pulse Test: pulse width v 300 ms, duty cycle v2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 V ns NTZD3154N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1.2 1.8 5.5 V VGS = 1.6 V VGS = 2.0 V to 2.2 V 0.6 VGS = 1.4 V 0.4 0.2 VGS = 1.2 V 0 0 RDS(on), DRAIN−TO−SOURCE CURRENT RESISTANCE (W) ID, DRAIN CURRENT (A) 1.8 V 0.8 2 3 4 5 6 TJ = −55°C 1.4 TJ = 100°C 1.2 1.0 0.8 0.6 0.4 TJ = 25°C 0.2 VGS = 1.0 V 1 VDS w 10 V 1.6 7 8 9 0 0.5 10 1.5 2.0 2.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 3.0 0.9 1.0 ID = 0.54 A TJ = 25°C 0.9 0.8 0.7 0.6 0.5 0.4 2 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C 0.8 VGS = 1.8 V 0.7 0.6 VGS = 2.5 V 0.5 VGS = 4.5 V 0.4 0.3 0.2 0.3 1 6 Figure 3. On−Resistance versus Gate−to−Source Voltage 0.4 1 1.2 1000 VGS = 0 V IDSS, LEAKAGE (nA) ID = 0.54 A VGS = 4.5 V 1.8 1.6 1.4 1.2 1 TJ = 150°C 100 TJ = 100°C 0.8 0.6 −50 0.6 0.8 ID, DRAIN CURRENT (A) Figure 4. On−Resistance versus Drain Current and Gate Voltage 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 1.0 TJ = 25°C 10 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 20 NTZD3154N TJ = 25°C VGS = 0 V 150 CRSS 100 CISS 50 0 5 COSS VDS = 0 V VGS 0 5 VDS 10 15 20 5 12 3 8 2 QGS QGD 1 0 4 ID = 0.54 A TJ = 25°C 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 0.6 100 IS, SOURCE CURRENT (A) VDS = 10 V ID = 0.2 A VGS = 4.5 V td(OFF ) 10 tf td(ON) tr 1 16 VGS Figure 7. Capacitance Variation t, TIME (ns) VDS 4 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 1 20 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 200 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 RG, GATE RESISTANCE (W) 0.5 0.4 0.3 0.2 0.1 0 0.2 100 VGS = 0 V TJ = 25°C Figure 9. Resistive Switching Time Variation versus Gate Resistance 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1 Figure 10. Diode Forward Voltage versus Current ORDERING INFORMATION Device Package Shipping NTZD3154NT1G SOT−563 (Pb−Free) 4000 / Tape & Reel NTZD3154NT5G SOT−563 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTZD3154N PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 5 6 1 e 2 A 4 E −Y− 3 b NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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