NTGS3136P Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 Features •Low RDS(on) in TSOP-6 Package •1.8 V Gate Rating •Fast Switching •This is a Pb-Free Device http://onsemi.com V(BR)DSS Applications •Optimized for Battery and Load Management Applications in -20 V Portable Equipment •High Side Load Switch •Switching Circuits for Game Consoles, Camera Phone, etc. RDS(ON) TYP ID MAX 25 mW @ -4.5 V -5.1 A 32 mW @ -2.5 V -4.5 A 41 mW @ -1.8 V -2.5 A P-Channel MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter 1 2 5 6 Symbol Value Unit Drain-to-Source Voltage VDSS -20 V Gate-to-Source Voltage VGS $8.0 V ID -5.1 Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C -3.6 tv5s TA = 25°C -5.8 Steady State PD Power Dissipation (Note 2) Pulsed Drain Current 4 MARKING DIAGRAM 1.25 W 1.6 TA = 25°C Steady State A TA = 25°C tv5s Continuous Drain Current (Note 2) 3 ID TA = 85°C TA = 25°C tp = 10 ms Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TSOP-6 CASE 318G STYLE 1 -3.7 A -2.7 1 SD MG G 1 PD 0.7 W IDM -20 A TJ, TSTG -55 to 150 °C TL 260 °C SD = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT Drain Drain Source 6 5 4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq). 1 2 3 Drain Drain Gate ORDERING INFORMATION Device Package Shipping† NTGS3136PT1G TSOP-6 (Pb-Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 August, 2007 - Rev. 0 1 Publication Order Number: NTGS3136P/D NTGS3136P THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction-to-Ambient – Steady State (Note 3) Parameter RqJA 100 Junction-to-Ambient – t = 5 s (Note 3) RqJA 77 Junction-to-Ambient – Steady State (Note 4) RqJA 185 Unit °C/W 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 mA -20 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ID = -250 mA, Reference 25°C IDSS VGS = 0 V, VDS = -20 V V -13 mV/°C TJ = 25°C -1.0 TJ = 85°C -5.0 IGSS VDS = 0 V, VGS = ±8.0 V VGS(TH) VGS = VDS, ID = -250 mA mA $0.1 mA -1.0 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance VGS(TH)/TJ -0.4 3 RDS(on) gFS mV/°C VGS = -4.5 V, ID = -5.1 A 25 33 VGS = -2.5 V, ID = -4.5 A 32 40 VGS = -1.8 V, ID = -2.5 A 41 51 VDS = -5.0 V, ID = -5.1 A 22 S 1901 pF mW CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1 MHz, VDS = -10 V 274 175 Total Gate Charge QG(TOT) 18 Threshold Gate Charge QG(TH) 0.7 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 4.3 RG 7.6 td(ON) 9 19 Tr 9 19 99 160 48 79 TJ = 25°C -0.7 -1.2 V TJ = 125°C -0.6 60 ns Gate Resistance VGS = -4.5 V, VDS = -10 V; ID = -5.1 A 29 nC 2.4 W SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time VGS = *4.5 V, VDD = -10 V, ID = -1.0 A, RG = 6.0 W td(OFF) Tf ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = -1.7 A Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = -1.7 A 5. Pulse Test: pulse width v 300 ms, duty cycle v 2% 6. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 37 NTGS3136P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 20 20 -I D, DRAIN CURRENT (A) -2.5 V 12 -1.5 V 8.0 4.0 0 0 RDS(on), DRAIN-T O-SOURCE RESISTANCE (W) VDS = -5 V -1.8 V -2 V 16 TJ = 25°C 15 10 TJ = 25°C 5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.25 1.5 1.75 2 2.25 2.5 Figure 2. Transfer Characteristics 0.10 0.08 0.06 TJ = 125°C 0.04 0.02 TJ = 25°C 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -V GS, GATE-T O-SOURCE VOLTAGE (V) 5.0 0.10 0.08 ID = -4.5 A VGS = -5.1 V C, CAPACITANCE (pF) 1.2 1.1 1.0 0.9 0.8 -25 0 25 50 75 100 125 -1.8 V 0.07 0.06 0.05 -2 V 0.04 0.03 -2.5 V 0.02 VGS = -4.5 V 0.01 0 0 4.0 8.0 12 16 20 -I D, DRAIN CURRENT (A) Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.5 1.3 TJ = 25°C 0.09 Figure 3. On-Resistance vs. Gate-to-Source Voltage RDS(on), DRAIN-T O-SOURCE RESISTANCE (NORMALIZED) 1 Figure 1. On-Region Characteristics 0.12 0.7 -50 0.75 -V GS, GATE-T O-SOURCE VOLTAGE (V) ID = -5.1 A 0 1.0 0.5 -V DS, DRAIN-TO-SOURCE VOLTAGE (V) 0.14 1.4 TJ = -55°C TJ = 125°C 0 0.5 RDS(on), DRAIN-T O-SOURCE RESISTANCE (W) -I D, DRAIN CURRENT (A) VGS = -4.5 V 150 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 VGS = 0 V TJ = 25°C f = 1 MHz Ciss Coss Crss 0 2 4 6 8 TJ, JUNCTION TEMPERATURE (°C) DRAIN-T O-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 10 12 NTGS3136P 12 QT 10 -V DS 4 8 3 -V GS 6 2 QGS QGD 4 VDS = -10 V ID = -5.1 A TJ = 25°C 1 0 0 2 4 6 8 10 12 14 16 2 0 18 100 VGS = 0 V -I S, SOURCE CURRENT (A) 5 -V DS, DRAIN-TO-SOURCE VOLTAGE (V) -V GS, GATE-T O-SOURCE VOLTAGE (V) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) TJ = 150°C 10 TJ = 25°C 1.0 0 0.2 0.4 0.6 0.8 1.0 -V SD, SOURCE-TO-DRAIN VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1.2 Figure 8. Diode Forward Voltage vs. Current 0.8 80 ID = -250 mA 70 0.7 60 POWER (W) -V GS(th) (V) 0.6 0.5 0.4 50 40 30 20 0.3 0.2 -50 10 0 -25 0 25 50 75 100 125 150 1E-2 1E-1 1 1E+1 1E+2 1E+3 TJ, JUNCTION TEMPERATURE (°C) SINGLE PULSE TIME (s) Figure 9. Threshold Voltage Figure 10. Single Pulse Maximum Power Dissipation R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) 100 -I D, DRAIN CURRENT (A) 1E-3 100 ms 10 1 ms 1 VGS = -8.0 V SINGLE PULSE 0.1 TC = 25°C RDS(on) LIMIT Thermal Limit Package Limit 0.01 0.1 1 10 ms dc 10 100 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 1E-04 1E-03 1E-02 1E-01 1 1E+01 1E+02 1E+03 -V DS, DRAIN-TO-SOURCE VOLTAGE (V) t, TIME (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. FET Thermal Response http://onsemi.com 4 NTGS3136P PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 5 4 2 3 E HE 1 b e q c A 0.05 (0.002) L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° - MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 DIM A A1 b c D E e L HE q 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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