DG9636 www.vishay.com Vishay Siliconix Dual SPDT Analog Switch DESCRIPTION FEATURES The DG9636 is a CMOS, dual SPDT analog switch designed to operate from 2.7 V to 12 V, single supply. All control logic inputs have a guaranteed 1.65 V logic HIGH threshold when operation from a 12 V power supply. This makes the DG9636 ideally suited to interface directly with low voltage micro-processor control signals. • Leakage current < 0.5 nA max. at 85 °C Processed with high density CMOS technology, the DG9636 has a 83 channel ON resistance while providing ultra low parasitic capacitance of 2 pF for CS(off) and 7 pF for CD(on). Other performance features are: 720 MHz -3 dB bandwidth, -67 dB Cross Talk and -58 dB Off isolation at 10 MHz frequency. • Fully specified with single supply operation at 12 V • Low switch capacitance (Csoff, 2 pF typ.) • RDS(on) -83 max. • Low voltage, 1.65 V CMOS/TTL compatible • 720 MHz, -3 dB bandwidth • Excellent isolation and crosstalk performance (typ. > -60 dB at 10 MHz) • Fully specified from -40 °C to 85 °C and -40 °C to +125 °C • Latch-up current 300 mA per JESD78 • Lead (Pb)-free low profile miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm) Key applications for the DG9636 are logic level translation, pulse generator, and high speed or low noise signal switching in precision instrumentations and portable device designs. • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 The DG9636 is available in space saving 1.4 mm x 1.8 mm miniQFN10 package. APPLICATIONS As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with lead (Pb)-free device termination. The miniQFN-10 package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free “-E4” suffix to the ordering part number. The nickel-palladium-gold device terminations meet all JEDEC® standards for reflow and MSL rating. • High-end data acquisition • Medical instruments • Precision instruments • High speed communications applications • Automated test equipment • Sample and hold applications FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG9636 miniQFN - 10L S2A 7 S2B 6 V+ 8 A1 9 5 D2 4 D1 Logic 3 S1B A0 10 1 Pin 1: LONG LEAD 2 GND S1A Top View Yx Pin 1 Device marking: Yx for DG9636 x = Date/Lot Traceability Code TRUTH TABLE Selected Input On Switches A1 A0 DG9636 X 0 D1 to S1A X 1 D1 to S1B 0 X D2 to S2A 1 X D2 to S2B S14-0483-Rev. C, 10-Mar-14 Document Number: 65159 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9636 www.vishay.com Vishay Siliconix ORDERING INFORMATION Temp. Range Package Part Number -40 °C to 125 °C 10 pin miniQFN DG9636EN-T1-E4 -40 °C to 85 °C 10 pin miniQFN DG9636DN-T1-E4 Note • -40 °C to 85 °C datasheet limits apply. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Limit V+ to GND Digital Inputs Unit 14 a, VS, VD V (V+) +0.3 or 30 mA, whichever occurs first Continuous Current (Any Terminal) 30 Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) 100 Storage Temperature mA -65 to 150 °C Power Dissipation (Package) b 10 pin miniQFN c, d 208 mW Thermal Resistance (Package) b 10 pin miniQFN 357 °C/W Notes a. Signals on SX, DX, or AX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.6 mW/°C above 70 °C. d. Manual soldering with iron is not recommended for leadless components. The miniQFN-10 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. SPECIFICATIONS Parameter Symbol Test Conditions Unless Otherwise Specified Temp. b V+ = 12 V, VA0, A1 = 1.65 V, 0.5 V a -40 °C to 125 °C -40 °C to 85 °C Typ. c Min. d Max. d Min. d Max. d Unit Analog Switch Analog Signal Range e On-Resistance On-Resistance Match On-Resistance Flatness VANALOG RDS(on) Ron IS = 1 mA, VD = +11.3 V IS = 1 mA, VD = +11.3 V RFLATNESS IS = 1 mA, VD = 0.7 V, 6.5 V, 11.3 V IS(off) Switch Off Leakage Current V+ = 12 V, VD = 1 V/11 V, VS = 11 V/1 V ID(off) Full - - 12 - 12 Room 83 - 110 - 110 Full - - 140 - 125 Room 2 - 4 - 4 Full - - 9 - 6 Room 33 - 45 - 45 Full - - 55 - 50 Room ± 0.01 -1 1 -1 1 Full - -18 18 -2 2 Room ± 0.01 -1 1 -1 1 Full - -18 18 -2 2 ID(on) V+ = 12 V, VD = VS 11 V/1 V Room ± 0.01 -1 1 -1 1 Full - -18 18 -2 2 Input Current, VIN Low IIL VAX = 0.5 V Full 0.005 -0.1 0.1 -0.1 0.1 Input Current, VIN High IIH VAX = 1.65 V Full 0.005 -0.1 0.1 -0.1 0.1 Input Capacitance e CIN f = 1 MHz Room 3 - - - - Channel On Leakage Current V nA Digital Control S14-0483-Rev. C, 10-Mar-14 μA pF Document Number: 65159 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9636 www.vishay.com Vishay Siliconix SPECIFICATIONS Parameter Symbol Test Conditions Unless Otherwise Specified Temp. b V+ = 12 V, VA0, A1 = 1.65 V, 0.5 V a -40 °C to 125 °C -40 °C to 85 °C Typ. c Min. d Max. d Min. d Max. d Unit Dynamic Characteristics Turn-On Time ton Turn-Off Time toff RL = 300, CL = 35 pF see figure 1, 2 Room 30 - 70 - 70 Full - - 90 - 80 Room 15 - 55 - 55 Full - - 75 - 65 Room 15 5 - 5 - Full - 2 - 2 - 23.5 - - - - ns Break-Before-Make tBBM Charge Injection e QINJ Vg = 0 V, Rg = 0 , CL = 1 nF Room OIRR RL = 50 , CL = 5 pF, f = 10 MHz Room -58 - - - - dB BW RL = 50 Room 720 - - - - MHz XTALK RL = 50 , CL = 5 pF, f = 10 MHz Room -67 - - - - dB Room 2 - - - - Room 7.7 - - - - Room 0.01 - - - - Room 0.001 - 0.5 - 0.5 Full - - 1 - 1 Room -0.001 -0.5 - -0.5 - Full - -1 - -1 - Temp. b Typ. c Off Isolation e Bandwidth e Channel-to-Channel Crosstalk e pC Dynamic Characteristics Source Off Capacitance e CS(off) Channel On Capacitance e CD(on) Total Harmonic Distortion e THD f = 1 MHz Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600 pF % Power Supplies Power Supply Current I+ VIN = 0 V, or V+ Ground Current IGND μA SPECIFICATIONS Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, VA0, A1 = 1.4 V, 0.5 V a -40 °C to 125 °C -40 °C to 85 °C Min. d Max. d Min. d Max. d Unit Analog Switch Analog Signal Range e On-Resistance VANALOG RDS(on) IS = 1 mA, VD = +3.5 V On-Resistance Match Switch Off Leakage Current Ron IS(off) ID(off) Channel On Leakage Current V+ = 5.5 V, VD = 1 V/4.5 V, VS = 4.5 V/1 V Full - - 5 - 5 Room 120 - 170 - 170 Full - - 250 - 200 Room 3 - 5 - 5 Full - - 12 - 10 Room ± 0.01 -1 1 -1 1 Full - -18 18 -2 2 Room ± 0.01 -1 1 -1 1 Full - -18 18 -2 2 Room ± 0.01 -1 1 -1 1 Full - -18 18 -2 2 ID(on) V+ = 5.5 V, VS = VD = 1 V/4.5 V Input Current, VIN Low IL VAX = 0.5 V Full 0.005 -0.1 0.1 -0.1 0.1 Input Current, VIN High IH VAX = 1.4 V Full 0.005 -0.1 0.1 -0.1 0.1 CIN f = 1 MHz Room 3 - - - - V nA Digital Control Input Capacitance S14-0483-Rev. C, 10-Mar-14 μA pF Document Number: 65159 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9636 www.vishay.com Vishay Siliconix SPECIFICATIONS Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, VA0, A1 = 1.4 V, 0.5 V a -40 °C to 125 °C -40 °C to 85 °C Temp. b Typ. c Room Min. d Max. d Min. d Max. d 55 - - - - Full - - - - - Room 30 - - - - Full - - - - - Room 36 - - - - Full - - - - - Full 10 - - - - Room -58 - - - - Room -68 - - - - Unit Dynamic Characteristics Turn-On Time ton Turn-Off Time toff Break-Before-Make-Time Charge Injection Off-Isolation e e RL = 300 , CL = 35 pF see figure 1, 2 tBMM QINJ OIRR CL = 1 nF, RGEN = 0 , VGEN = 0 V f = 10 MHz, RL = 50 , CL = 5 pF ns pC dB Crosstalk e XTALK Bandwidth e BW RL = 50 Room 610 - - - - MHz Total Harmonic Distortion e THD Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600 Room 2.2 - - - - % Source Off Capacitance e CS(off) 2.1 - - - - f = 1 MHz Room 8.1 - - - - Room 0.001 - 0.5 - 0.5 Full - - 1 - 1 Room -0.001 -0.5 - -0.5 - Full - -1 - -1 - Temp.b Typ. c Full - - Room 200 Channel On Capacitance e CD(on) pF Power Supplies Power Supply Current I+ VIN = 0 V, or V+ Ground Current IGND μA SPECIFICATIONS Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 3 V, VA0, A1 = 1.4 V, 0.5 V a -40 °C to 125 °C Max. d 3 - 3 - 245 - 245 Max. d -40 °C to 85 °C Min. d Min. d Unit Analog Switch Analog Signal Range e On-Resistance VANALOG RDS(on) IS = 1 mA, VD = +1.5 V On-Resistance Match Switch Off Leakage Current (for 16 pin miniQFN) Channel On Leakage Current (for 16 pin miniQFN) Ron IS(off) V+ = 3.3 V, V- = 0 V VD = 1 V/3 V, VS = 3 V/1 V ID(off) Full - - 325 - 290 Room 5 - 6 - 6 Full - - 13 - 11 Room ± 0.01 -1 1 -1 1 Full - -18 18 -2 2 Room ± 0.01 -1 1 -1 1 Full - -18 18 -2 2 Room ± 0.01 -1 1 -1 1 Full - -18 18 -2 2 ID(on) V+ = 3.3 V, V- = 0 V, VS = VD = 1 V/3 V Input Current, VIN Low IL VAX = 0.5 V Full 0.005 -0.1 0.1 -0.1 0.1 Input Current, VIN High IH VAX = 1.4 V Full 0.005 -0.1 0.1 -0.1 0.1 CIN f = 1 MHz Room 3.1 - - - - V nA Digital Control Input Capacitance S14-0483-Rev. C, 10-Mar-14 μA pF Document Number: 65159 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9636 www.vishay.com Vishay Siliconix SPECIFICATIONS Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 3 V, VA0, A1 = 1.4 V, 0.5 V a -40 °C to 125 °C -40 °C to 85 °C Temp.b Typ. c Room 96 - - - - Full - - - - - Room 60 - - - - Full - - - - - Room 77 - - - - Full - - - - - Min. d Max. d Min. d Max. d Unit Dynamic Characteristics Enable Turn-On Time ton Enable Turn-Off Time toff Break-Before-Make-Time Charge Injection e tBMM QINJ Off-Isolation e OIRR Crosstalk e XTALK Bandwidth e BW Total Harmonic Distortion e THD Source Off Capacitance e CS(off) Channel On Capacitance e RL = 300 , CL = 35 pF see figure 1, 2 CD(on) CL = 1 nF, RGEN = 0 , VGEN = 0 V ns Full 6.6 - - - - Room -57 - - - - Room -69 - - - - RL = 50 Room 525 - - - - MHz Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600 Room 2.2 - - - - % 2.1 - - - - f = 1 MHz Room 8.3 - - - - 0.001 - 0.5 - 0.5 f = 10 MHz, RL = 50 , CL = 5 pF pC dB pF Power Supplies Power Supply Current Room I+ VIN = 0 V, or V+ Ground Current IGND Full - - 1 - 1 Room -0.001 -0.5 - -0.5 - Full - -1 - -1 - μA Notes a. VIN = input voltage to perform proper function. b. Room = 25 ºC, Full = as determined by the operating temperature. c. Typical value are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0483-Rev. C, 10-Mar-14 Document Number: 65159 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9636 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 500 350 T = 25 °C IS = 1 mA VCC = 2.7 V 300 + 85 °C + 25 °C + 125 °C - 40 °C 400 RON - On-Resistance () VCC = 3.0 V RON - On-Resistance () V+ = 3.0 V IS = 1 mA 450 250 200 VCC = 5.0 V 150 VCC = 12.0 V 100 VCC = 10.8 V 350 300 250 200 150 100 50 50 VCC = 13.2 V 0 0 0 2 4 6 8 10 12 14 0 1 1.5 2 2.5 3 VD - Analog Voltage (V) On-Resistance vs. Single Supply Voltage On-Resistance vs. Analog Voltage and Temperature 350 150 V + = 12.0 V IS = 1m A V+ = 5.0 V IS = 1 mA 125 + 125 °C + 85 °C + 25 °C - 40 °C 250 RON - On-Resistance () 300 RON - On-Resistance () 0.5 VD - Analog Voltage (V) 200 150 100 + 25 °C + 85 °C + 125 °C 100 - 40 °C 75 50 25 50 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 1 2 3 4 5 6 7 8 9 10 11 12 VD - Analog Voltage (V) VD - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature On-Resistance vs. Analog Voltage and Temperature 100 µA 10 000 V+ = +12.0 V V+ = 13.2 V 1000 1 µA Leakage Current (pA) Supply Current (A) 10 µA 100 nA IGND I+ 1 nA 100 pA ID(off) 100 IS(off) ID(on) 10 10 pA 1 pA 10 100 1K 10K 100K 1M 10M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency S14-0483-Rev. C, 10-Mar-14 1 - 60 - 40 - 20 0 20 40 60 80 100 120 140 Temperature (°C) Leakage Current vs. Temperature Document Number: 65159 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9636 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 25 0 LOSS - 10 15 Q - Charge Injection (pC) LOSS, OIRR, XTALK (dB) - 20 - 30 - 40 - 50 - 60 XTALK OIRR - 70 V+ = 12.0 V 10 5 0 -5 V+ = 3.0 V - 10 V+ = 5.0 V - 80 - 15 - 90 - 20 - 100 100K T = 25 °C CL = 1 nF 20 V+ = 12.0 V RL = 50 - 25 1M 10M 100M 0 1G 1 2 3 4 5 6 7 8 9 10 Frequency (Hz) VS - Analog Voltage (V) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Charge Injection vs. Analog voltage 11 12 1.4 Vth - Switching Threshold (V) 1.3 1.2 VIH 1.1 1.0 0.9 VIL 0.8 0.7 0.6 0.5 0.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 V+ - Supply Voltage (V) Switching Threshold vs. Supply Voltage S14-0483-Rev. C, 10-Mar-14 Document Number: 65159 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9636 www.vishay.com Vishay Siliconix TEST CIRCUITS V+ A0 or A1 V+ S1A or S2A 50 Ω t r < 5 ns t f < 5 ns VCC V+ 50 % VAX 0V S1B or S2B VS1A or VS2A D1 or D2 GND 300 Ω 90 % 90 % VO VO 50 % 35 pF 0V t OFF t ON S1A or S2A ON Figure 1. Enable Switching Time V+ tr < 5 ns tf < 5 ns VCC V+ SxA - SxB A0 50 Ω V+ 50 % VA0,A1 0V A1 VSxA or VSxB 80 % VO D1 or D2 GND VO 300 Ω 35 pF 0V tD Figure 2. Break-Before-Make V+ t r < 5 ns t f < 5 ns V+ VCC A0 or A1 VAX OFF ON OFF 0V Rg SxA or SxB VO Vg GND ΔVO VO D1 or D2 CL 1 nF Charge Injection = ΔVO X CL Figure 3. Charge Injection S14-0483-Rev. C, 10-Mar-14 Document Number: 65159 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9636 www.vishay.com Vishay Siliconix TEST CIRCUITS V+ V+ Network Analyzer V+ V+ A0 or A1 Network Analyzer V+ VIN A0 S1A or S2A Rg = 50 Ω Vg VIN SxA or SxB A1 Vg VOUT VOUT D1 or D2 D1 or D2 GND 50 Ω Insertion Loss = 20 log Rg = 50 Ω GND 50 Ω VOUT Off Isolation = 20 log VIN Figure 4. Insertion Loss VOUT VIN Figure 5. Off-Isolation V+ V+ Network Analyzer V+ A0 or A1 V+ S1A or S2A VIN Vg Rg = 50 V+ V+ A0 or A1 D1 or D2 VOUT S1A or S2A | to | S2A or S2B S1B or S2B 50 Ω GND D1 or D2 50 Ω GND Cross Talk = 20 log VOUT VIN Figure 6. Crosstalk Impedance Analyzer V- V- Figure 7. Source/Drain Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65159. S14-0483-Rev. C, 10-Mar-14 Document Number: 65159 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MINI QFN-10L CASE OUTLINE DIM MILLIMETERS INCHES MIN. NAM. MAX. MIN. NAM. MAX. A 0.45 0.55 0.60 0.0177 0.0217 0.0236 A1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 0.150 or 0.127 REF (1) c 0.006 or 0.005 REF (1) D 1.70 1.80 1.90 0.067 0.071 0.075 E 1.30 1.40 1.50 0.051 0.055 0.059 e 0.40 BSC 0.016 BSC L 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.0177 0.0197 0.0217 Note (1) The dimension depends on the leadframe that assembly house used. ECN T16-0163-Rev. B, 16-May-16 DWG: 5957 Revision: 16-May-16 1 Document Number: 74496 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 10L 1.700 (0.0669) 9x 0.563 (0.0221) 0.663 (0.0261) 0.200 (0.0079) 1 2.100 (0.0827) 0.400 (0.0157) Pitch 10 x 0.225 (0.0089) Mounting Footprint Dimensions in mm (inch) Document Number: 66554 Revision: 05-Mar-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000