CPC7514 (Rev 6) Data Sheet

CPC7514
Quad High Voltage Isolated
Analog Switch Array
INTEGRATED CIRCUITS DIVISION
Features
Description
•
•
•
•
•
•
•
The CPC7514 Quad High Voltage (HV) isolated
Analog Switch Array builds upon our Line Card
Access Switch (LCAS) design and fabrication
expertise for telecom and non-telecom applications.
This monolithic solid state device provides the
switching functionality of four normally open
(1-Form-A) relays in one small economical package.
•
•
•
•
Low, Matched RON
Switch Voltage up to 320V
110dB Switch-to-Switch Isolation at 5kHz
Flexible Switch Configurations
Smart Logic for Power-Up/Hot-Plug State Control
3.3V Operation with Very Low Power Consumption
Switch Current Limiting and Thermal Shutdown
Protects Against Fault Conditions
TTL Logic-Level Inputs
Input Latch
Clean, Bounce-Free Switching
Monolithic IC Reliability
Designed to provide flexible single-ended or
differential access to high voltage networks, the
CPC7514 high voltage array is configured as two sets
of matched paired switches for improved differential
performance. Additionally, sensitive differential
applications will benefit from the matched pairs’
excellent pair-to-pair isolation. The self-biasing
switches do not require external high-voltage supplies
for proper operation.
Applications
•
•
•
•
•
Instrumentation
Industrial Controls and Monitoring
Automatic Test Equipment (ATE)
Battery Monitoring and Charging
Telephony
• VoIP Gateways
• Central Office (CO) and Remote Terminal (RT)
• Digital Loop Carrier (DLC)
• Optical Terminals (ONT & ONU)
• PBX Systems
• Optical Network Terminals (ONT) and Optical
Network Units (ONU)
• Hybrid Fiber Coax (HFC)
Independent switch current limiting and switch-pair
thermal shutdown features provide enhanced
protection for devices connected to high voltage
networks up to +320V.
Ordering Information
Part #
Description
CPC7514Z
20-Pin SOIC in Tubes (40/Tube)
CPC7514ZTR
20-Pin SOIC Tape & Reel (1000/Reel)
Figure 1. CPC7514 Block Diagram
VDD = 3.3V
S1*
S1A
S1B
S2*
CHANNEL 1-2
S2A
IN1
IN2
LATCH1-2
S2B
L
A
T
C
H
1-2
Channel 1-2 S
1
Switch
S2
Control
Logic
TSD1-2
S3*
S3A
CHANNEL 3-4
S3B
S4*
S4A
IN3
IN4
LATCH3-4
S4B
L
A
T
C
H
3-4
Channel 3-4 S
3
Switch
S4
Control
Logic
TSD3-4
* ±320V
DGND
Pb
DS-CPC7514-R06
e3
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1
CPC7514
INTEGRATED CIRCUITS DIVISION
1. Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.1 Package Pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2 Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.4 General Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5 Switch Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.6 Digital I/O Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.7 Switch Timing Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.8 VDD Voltage Supply Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.9 Protection Circuitry Thermal Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.10 Truth Tables. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.10.1 CHANNEL1-2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.10.2 CHANNEL3-4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
3
3
4
4
5
6
6
7
7
8
8
8
2. Performance Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.2 Under-Voltage Switch Lock-Out Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.3 Switch Logic. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.3.1 Data Latch. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.3.2 TSD Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.4 Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.5 Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.5.1 Dynamic High Frequency Current Limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.5.2 Low Frequency Current Limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.5.3 Thermal Shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.6 External Protection Elements. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.7 Thermal Design Assessment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
10
10
10
11
11
11
11
11
12
12
13
13
4. Manufacturing Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.1 Moisture Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.2 ESD Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.3 Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.4 Board Wash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.5 Mechanical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.5.1 CPC7514Z Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.5.2 CPC7514ZTR Tape & Reel Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
14
14
14
14
15
15
15
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R06
CPC7514
INTEGRATED CIRCUITS DIVISION
1. Specifications
1.1 Package Pinout
1.2 Pin Descriptions
Pin
Name
6,14
7
13
VDD
DGND
NC
S3B
1
20
S2B
S4B
2
19
S1B
IN4
3
18
IN2
IN3
4
17
IN1
LATCH3-4
5
16
LATCH1-2
VDD
6
15
TSD1-2
18
17
16
DGND
7
14
VDD
15
TSD3-4
8
13
N/C
S4A
9
12
S1A
S3A
10
11
S2A
12
19
11
20
3
4
5
8
10
1
9
2
R06
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Description
Logic Supply Voltage
Ground
Not Connected
CHANNEL 1-2
IN2
Input - Switch 2 state control
IN1
Input - Switch 1 state control
LATCH1-2 Input - Latch control for SW1 & SW2
I/O - Thermal shutdown output and All-Off
TSD1-2
input control for SW1 & SW2
S1A
Switch 1 - side A
S1B
Switch 1 - side B
S2A
Switch 2 - side A
S2B
Switch 2 - side B
CHANNEL 3-4
IN4
Input - Switch 4 state control
IN3
Input - Switch 3 state control
LATCH3-4 Input - Latch control for SW3 & SW4
I/O - Thermal shutdown output and All-Off
TSD3-4
input control for SW3 & SW4
S3A
Switch 3 - side A
S3B
Switch 3 - side B
S4A
Switch 4 - side A
S4B
Switch 4 - side B
3
CPC7514
INTEGRATED CIRCUITS DIVISION
1.3 Absolute Maximum Ratings
Parameter
+3.3V power supply (VDD)
Logic input voltage
Logic input to switch output
isolation
Switch open-contact isolation
(SW1, SW2, SW3, SW4)
Operating relative humidity
Operating temperature
Storage temperature
1.4 General Conditions
Minimum Maximum
Unit
-0.3
-0.3
+7
VDD + 0.3
V
V
-
320
V
-
320
V
5
-40
-40
95
+110
+150
%
C
C
Unless otherwise specified, minimum and maximum
values are guaranteed by production testing. Typical
values are characteristic of the device and are the
result of engineering evaluations. They are provided
for informational purposes only and are not
guaranteed by production testing.
Specifications cover the operating temperature range
TA = -40C to +85C. Also, unless otherwise specified,
all testing is performed with VDD = 3.3VDC, logic low
input voltage is 0VDC and logic high input voltage is
3.3VDC.
Absolute maximum electrical ratings are at 25C.
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
4
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R06
CPC7514
INTEGRATED CIRCUITS DIVISION
1.5 Switch Electrical Specifications
Parameter
Off-State
Leakage Current
Test Conditions
Symbol
Minimum
Typical
Maximum
Unit
VSW (differential) = SxA to SxB
VSW (differential) = SxB to SxA
Switch Off.
+25C,
VSW (differential) = +320V to Gnd
+0.1
ISW
+85C,
VSW (differential) = +330V to Gnd
-
-40C,
VSW (differential) = +310V to Gnd
+0.3
+1
A
+0.1
ISW(on) = ±10mA, ±40mA
On Resistance
+25C
-
14.5
-
-
-
31
8
10.5
-
RON
-
0.1
0.8
Maximum Differential Voltage 1
VON
-
-
320
Current-Foldback Voltage-Breakpoint 1
V1
60
-
-
Current-Foldback Voltage-Breakpoint 2
V2
V1 + 0.5
-
-
130
200
-
80
-
-
-
-
425
RON
+85C
-40C
On Resistance
Matching

Per On Resistance test conditions
SW1 & SW2
SW3 & SW4
ON-State Voltage 2
Low Frequency
Current Limit 1 2
V
VSW (on) = ±10V
+25C
ILIM1
+85C
-40C
Low Frequency
Current Limit 2 2

mA
VSW (on) = ±V2
ILIM2
1
-
-
mA
High Frequency
Dynamic Current Limit
(t <0.5 s)
Switches on, Apply ±1 kV 10x1000 s
pulse with appropriate protection in
place
ISW
-
1
-
A
Logic Input to Switch
Output Isolation
VSW: VSxA = VSxB to Gnd
-
+0.1
-
-
+0.3
+1
-40C, VSW = ±310V
-
+0.1
-
Any switch to any other switch
f=5kHz
110
-
-
dB
1500
2100
-
V/s
+25C, VSW = ±320V
ISW
+85C, VSW = ±330V
Switch to Switch
Isolation
Transient Immunity
100VP-P Square Wave at 100Hz
1
Choice of high voltage side protector should ensure this rating is not exceeded.
2
See “Figure
R06
dV/dt
A
1: Switch Low Frequency Response” on page 12.
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5
CPC7514
INTEGRATED CIRCUITS DIVISION
1.6 Digital I/O Electrical Specifications
Parameter
Test Conditions
Symbol
Minimum
Typical
Maximum
Unit
Logic High
Input voltage rising
VIH
-
1.5
2.0
V
Logic Low
Input voltage falling
VIL
0.8
1
-
V
Input Characteristics
Input Voltage: (INx, LATCHx, TSDx)
VIN
Hysteresis
500
mV
Input Leakage Current
Logic High:
INx
LATCHx
VDD = 3.6V, VIH = 2.4V
IIH
TSDx
-
0.1
1
-10
-19
-100
-10
-16
-50
-
0.1
1
-10
-47
-125
-10
-16
-50
A
Logic Low:
INx
LATCHx
VDD =3.6V, VIL = 0.4V
IIL
TSDx
A
Output Characteristics
Output Voltage: TSDx:
Logic High
VDD = 3.6V, ITSD = 10A
VTSD_off
2.4
VDD
-
V
Logic Low
VDD = 3.6V, ITSD = 1mA
VTSD_on
-
0
0.4
V
Symbol
Minimum
Typical
Maximum
Unit
1.7 Switch Timing Specifications
Parameter
Test Conditions
Switch turn on delay
LATCHx = 0V, ISW_off = 0mA,
ton@ISW = 9mA
td_on
-
0.25
1.0
ms
Switch turn off delay
LATCHx = 0V, ISW_on = 10mA,
toff@ISW = 0.5mA
td_off
-
0.05
0.5
ms
Switch turn on matching
As per Switch Turn On Delay,
Any switch to any other switch
ton
-
10
100
s
Switch turn off matching
As per Switch Turn Off Delay,
Any switch to any other switch
toff
-
2
100
s
-
120
160
-
190
240
Switch Capacitance
SxA=SxB to Gnd
SxA to SxB, VSW (differential)=0V
6
C
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pF
R06
CPC7514
INTEGRATED CIRCUITS DIVISION
1.8 VDD Voltage Supply Specifications
Parameter
Test Conditions
Symbol
Minimum
Typical
Maximum
Unit
-
VDD
3
3.3
3.6
V
0.75
1.5
2.3
mA
2.0
4.5
6.0
mA
-
2
2.8
1
1.95
-
-
50
-
mV
Symbol
Minimum
Typical
Maximum
Unit
TTSD_on
110
125
150
C
TTSD_off
10
-
25
C
Voltage Requirements
Voltage operational
range
Current Specifications
VDD Current
3.0 < VDD < 3.6V, All switches = OFF,
All logic I/O = Open
3.0 < VDD < 3.6V, All switches = ON,
All logic I/O = Open
IDD
Under Voltage Lockout Specifications
Thresholds
VDD rising
VDD falling
UVLO
Hysteresis
V
1.9 Protection Circuitry Thermal Specifications
Parameter
Conditions
Temperature Shutdown Specifications 1
Shutdown activation
temperature
Shutdown circuit
hysteresis
1
Not production tested - limits are
guaranteed by design and Quality
Control sampling audits
Temperature shutdown flag (TSDx) will be high during normal operation and low during temperature shutdown state.
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7
CPC7514
INTEGRATED CIRCUITS DIVISION
1.10 Truth Tables
1.10.1 CHANNEL1-2
LATCH1-2
IN2
IN1
0
0
0
0
1
x
0
0
1
1
x
x
0
1
0
1
x
x
1Z
TSD1-2
Z1
0
S2
S1
OFF
OFF
OFF
ON
ON
OFF
ON
ON
Unchanged Unchanged
OFF
OFF
LATCH3-4
IN4
IN3
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
TSD3-4
x
x
x
S4
S3
x
x
x
x
x
x
x
x
x
x
x
x
S4
S3
= High Impedance. Because TSD1-2 has an internal pull-up, it should be controlled with an open-collector or open-drain type device.
1.10.2 CHANNEL3-4
LATCH1-2
IN2
IN1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
1Z
TSD1-2
x
x
S2
S1
LATCH3-4
IN4
IN3
x
x
x
x
x
x
x
x
x
x
x
x
0
0
0
0
1
x
0
0
1
1
x
x
0
1
0
1
x
x
TSD3-4
Z1
0
OFF
OFF
OFF
ON
ON
OFF
ON
ON
Unchanged Unchanged
OFF
OFF
= High Impedance. Because TSD3-4 has an internal pull-up, it should be controlled with an open-collector or open-drain type device.
As can be seen in the two truth tables above, CHANNEL1-2 and CHANNEL3-4 have identical functionality yet are
independent. As such, for each state of one channel there are four possible states for the other channel giving the
CPC7514 a total of 16 realizable states.
8
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R06
CPC7514
INTEGRATED CIRCUITS DIVISION
2. Performance Data
Insertion Loss=
V
+20 log M
VS
+
VM
50Ω
Open Circuit=
V
+20 log M
VS
Insertion Loss Into 50Ω
0
Transfer Gain (dB)
-1.0
VS
Loss (dB)
-1.5
-2.0
-2.5
-3.0
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
1E+7
1E+8
VS
+
VM
50Ω
Open Circuit Transfer Gain Into 50Ω
-20
-40
-60
-80
-100
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
1E+7
1E+8
Channel 1
Open
Cross Talk=
V
+20dB log M
VS
VS
Channel 2
+
VM
Open
50Ω
Cross Talk Into 50Ω
Transfer Gain (dB)
0
-20
-40
-60
-80
-100
1E+4
1E+5
PSD
1E+6
1E+7
Frequency (Hz)
1E+8
+
VM
Open
50Ω
PSD Closed Switch Into 50Ω
-20
-20
-20
-40
-60
-80
-100
-120
Noise Power (dBm/Hz)
0
-40
-60
-80
-100
-120
-140
-140
0
R06
PSD Closed Switch Into 50Ω
0
Noise Power (dBm/Hz)
Noise Power (dBm/Hz)
PSD Closed Switch Into 50Ω
0
200
400
600
Frequency (kHz)
800
1000
-40
-60
-80
-100
-120
-140
0
1
2
3
Frequency (MHz)
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4
5
0
2
4
6
8 10 12 14
Frequency (MHz)
16
18
20
9
CPC7514
INTEGRATED CIRCUITS DIVISION
3. Functional Description
3.1 Introduction
The CPC7514 High Voltage Quad Analog Switch
Array has four independent symmetrical switches
providing 16 unique operating states. These
operational states and the logical behavior of the
device are shown in the tables given in “Truth
Tables” on page 8. Switch organization consists of
two channels each having a pair of switches. Within
each channel there is a single LATCH input and a
single Temperature Shutdown circuit shared by the
switch pair. Other than these two shared circuits the
performance of each switch within a channel is
independent of the other. As there is no shared
circuitry between the channels, the switches of one
channel are completely independent of the other
channel. Switch utilization under normal operating
conditions allows the switches to be used in any
combination. In designs where the switches will be
required to carry high load currents or operate in
higher temperature environments the thermal
specifications should be reviewed.
Solid-state switch construction of the CPC7514 offers
clean, bounce-free switching with simple logic input
control to provide access to high voltage interfaces
without the impulse noise generated by traditional
electromechanical switching techniques. Simple logic
input control eliminates the additional driver circuitry
required by traditional techniques.
The low on-resistance (RON) symmetrical linear
switches are configured as matched pairs, SW1/SW2
and SW3/SW4, for improved performance when
differential access is required. Their symmetrical
construction provides an additional degree of design
flexibility allowing either side of the switch to be
connected to the high voltage network.
Integrated into the CPC7514 switches are active
current limiting and thermal shutdown mechanisms to
provide protection for the electronics being connected
to the high voltage network during a fault condition.
High frequency positive and negative transient
currents such as lightning are reduced by the current
limiting circuitry. Protection from prolonged low
frequency power-cross and DC currents, also reduced
by the current limiting circuitry, is supplemented by
thermal shutdown circuits.
10
To protect against a high voltage fault in excess of the
CPC7514’s maximum voltage rating, use of an
over-voltage protector is required. The protector must
limit the voltage seen at the SxA and SxB terminals to a
level below the switches maximum breakdown
voltage. To minimize the stress on the solid-state
contacts, use of a foldback or crowbar type protector is
highly recommended. With proper selection of the
protector, telecom applications using the CPC7514
will meet all relevant ITU, LSSGR, TIA/EIA and IEC
protection requirements.
Operating from a single +3.3V supply the CPC7514
has extremely low power consumption.
3.2 Under-Voltage Switch Lock-Out Circuitry
Smart logic in the CPC7514 provides for switch state
control during both power up and power loss
transitions to prevent undesired connections to high
voltage networks. An internal detector evaluates the
VDD supply to determine when to de-assert the
under-voltage switch lock-out circuitry with a rising
VDD, and when to assert the under-voltage switch
lock-out circuitry with a falling VDD. Any time
unsatisfactory low VDD conditions exist, the lock-out
circuit overrides user switch control by blocking the
external information at the input pins, and conditioning
internal switch commands to the All-Off state. Upon
restoration of VDD, the switches will remain off until the
LATCHx input is pulled low with proper conditioning of
the INx inputs.
The rising VDD lock-out release threshold is internally
set to ensure all internal logic is properly biased and
functional before accepting external switch commands
from the inputs to control the switch states. For a
falling VDD event, the lock-out threshold is set to
assure proper logic and switch behavior up to the
moment the switches are forced off and external
inputs are suppressed.
3.3 Switch Logic
The CPC7514 uses smart logic to monitor the VDD
supply. Any time VDD is below an internally set
threshold, the smart logic places the control logic into
the All-Off state. After VDD recovers the switches may
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CPC7514
INTEGRATED CIRCUITS DIVISION
be reconfigured by setting the LATCHx input low. Prior
to the assertion of a logic low at the LATCHx pin, the
switch control inputs must be properly conditioned.
3.3.1 Data Latch
The CPC7514 has two integrated transparent data
latches. The latch-enable operation is controlled by
logic input levels at the LATCHx pins. Data input to the
latch is via the INx input pins while the outputs of the
data latch are internal nodes used for state control.
When the latch enable control pin is at a logic 0 the
data latch is transparent and the input control signals
flow directly through the data latch to the state control
circuitry. A change in input will be reflected by a
change in the switch state.
Whenever the latch enable control pin is at logic 1, the
data latch is active and the control data is locked.
Subsequent changes to the INx input control pins will
not result in a change to the control logic or affect the
existing switch states.
The switches will remain in the state they were in
when the LATCHx changes from logic 0 to logic 1, and
will not respond to changes in input as long as the
LATCHx is at logic 1. However, the TSDx are not
affected by the latch function. Since internal thermal
shutdown control is not affected by the state of the
latch enable input, TSDx will override state control.
recommends the use of an open-collector or an
open-drain type output to control TSDx. For
lower-voltage logic control, this avoids sinking the
TSDx pull-up bias current to ground during normal
operation when the All-Off state is not required. And
for higher logic-voltage control, this prevents
over-voltage biasing of the TSDx input.
If TSDx is forced to a logic 1 or tied to VDD, the channel
just ignores this input, and still enters the thermal
shutdown state at high temperature. In other words,
the thermal shutdown feature can not be overridden
by an external pull-up on the TSDx control.
3.4 Power Supplies
Only a +3.3V logic supply and ground are connected
to the CPC7514. Switch state control is powered
exclusively by the +3.3V supply. As a result, the
CPC7514 exhibits extremely low power consumption
during active and idle states.
3.5 Protection
The CPC7514 provides protection for both the low
voltage side circuitry it connects to high voltage
networks and itself. Three separate layers of
protection are interleaved within the device to protect
against high-energy high-frequency transients and
high-power, low-frequency fault conditions.
3.5.1 Dynamic High Frequency Current Limit
3.3.2 TSD Pin Description
The TSDx pins are bidirectional I/O structures with
internal pull-up resistors sourced from VDD. As
outputs, these pins indicate the status of the thermal
shutdown circuitry for the associated channel.
Typically, during normal operation, these pins will be
pulled up to VDD, but, under fault conditions that create
excess thermal loading, the channel under duress will
enter thermal shutdown and a logic low will be output
at TSDx.
As inputs, the TSDx pins are utilized to place the
channel into the All-Off state by simply pulling the
input low. This is a convenient way to temporarily
place the channel’s switches into the off state without
the need to cycle the inputs and LATCH through an off
and then an on sequence.
High voltage networks are ofttimes located in
environments susceptible to lightning events resulting
in high-frequency, high-energy transients being
coupled onto the high voltage network. Low voltage
circuits accessing high voltage networks through the
CPC7514 are protected from these events by the
dynamic high-frequency current-limit response
incorporated into each switch.
While in the ON state, the high frequency current is
restricted by the CPC7514. For a GR-1089-CORE
specified +1000V 10x1000s lightning pulse with a
generator source impedance of 10 applied to the
high voltage network though a properly clamped
external protector, the current seen at the CPC7514
low voltage side interface will be a pulse with a typical
magnitude of 1A and a duration less than 0.5s.
For applications using logic devices powered from a
supply voltage that differs from the CPC7514, (lower
or higher than VDD), IXYS Integrated Circuits Division
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11
CPC7514
INTEGRATED CIRCUITS DIVISION
3.5.2 Low Frequency Current Limit
High-power, low-frequency faults are generally the
result of power cross (also known as power contact)
events. Current through a switch in the ON state
during a power-cross fault will be constrained by the
low-frequency current-limit response of the switch. As
shown in “Figure 1: Switch Low Frequency
Response” on page 12 the low-frequency
current-limit response is dependent on the differential
voltage across the switch. For low levels of fault
current the graph shows that the voltage across the
active switch increases with increasing fault current.
When the magnitude of the fault current into the
CPC7514 reaches the Current Limit 1 (ILIM1)
threshold, the switch ceases to accept additional
current causing the switch response to transition from
low impedance to high impedance. This causes the
voltage across the switch to increase rapidly.
With a fault source of sufficient magnitude, the voltage
across the switch will continue to increase. To limit
on-chip power dissipation, the switch will decrease the
Current Limit when the voltage across the switch
reaches the Current-Foldback Voltage-Breakpoint 1
(V1) level. Additional increases in switch voltage will
cause the switch to transition to Current Limit 2 (ILIM2)
at Current-Foldback Voltage-Breakpoint 2 (V2) further
reducing the thermal loading of the switch.
Figure 1: Switch Low Frequency Response
ISW
ILIM1
2/3 RON
-VMAX
-V2 -V1
-1.5V ILIM2
RON
-ILIM2 1.5V
V1 V2
VSW
VMAX
-ILIM1
Thermal management of each channel is necessary
to minimize the internal temperature rise inside the
package, created by a fault on one channel, from
causing a thermal shutdown event of the other
channel.
12
It is important to note that the low-frequency
current-limit performance is dependent on a voltage
clamping device on the low-voltage side sized to
ensure that fault voltages do not exceed the
specifications of the low-voltage circuits, and capable
of redirecting currents up to the maximum level of
Current Limit 1.
Note that the current-limit circuitry has a negative
temperature coefficient. As a result, if the device is
subjected to extended heating due to a prolonged
power-cross fault condition, the current through the
active switch will decrease as the device temperature
rises. If the device temperature rises sufficiently, then
the temperature shutdown mechanism will activate
and the channel will enter the All-Off state.
3.5.3 Thermal Shutdown
The thermal-shutdown mechanism activates when the
channel’s die temperature reaches a minimum of
110°C, placing the channel’s switch pair into the All-Off
state regardless of logic input. During thermal
shutdown events the TSDx pin will output a logic low
with a nominal 0V level. A logic high is output from the
TSDx pin during normal operation with a typical output
level equal to VDD.
If presented with a short-duration transient, such as a
lightning event, the thermal-shutdown feature will
typically not activate. But in an extended power-cross
event, the device temperature will rise, and the
thermal shutdown mechanism will activate, forcing the
channel’s switches to the All-Off state. At this point the
current into the active switch will drop to zero. Once
the channel enters thermal shutdown, it will remain in
the All-Off state until the temperature of the channel
drops below the de-activation level of the
thermal-shutdown circuit. This permits the circuit to
autonomously return to normal operation. If the fault
has not passed, current will again flow up to the value
allowed by the low-frequency current-limit of the
switches, and heating will resume, reactivating the
thermal-shutdown mechanism. This cycle of entering
and exiting the thermal-shutdown mode will continue
as long as the fault condition persists. If the magnitude
of the fault condition is great enough, the external
over-voltage protector will activate, shunting the fault
current to ground.
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CPC7514
INTEGRATED CIRCUITS DIVISION
3.6 External Protection Elements
The CPC7514 requires only over-voltage secondary
protection on the high-voltage side of the switch.
Additional external protection may be required on the
low-voltage side of the switch if the threshold of the
high-voltage side protector exceeds the safe operation
of the low-voltage side components. Because the fault
current seen by the low-voltage side protector is
limited by the switch’s active current limit circuitry, the
low-voltage side protector need not be as capable as
that of the high-voltage side protector. The
high-voltage side protector must limit voltage
transients to levels that do not exceed the breakdown
voltage or input-output isolation barrier of the
CPC7514. A foldback or crowbar type protector on the
high-voltage side is recommended to minimize
stresses on the CPC7514.
power is the sum of the maximum current through
each active switch times the On-Resistance of the
switch (ISWx2 X RON).
The second equation is used to calculate the
maximum ambient temperature that the device can be
operated in based on the calculated total power of the
previous equation. PTOTAL, the value obtained in the
first equation; T, the junction temperature rise of the
CPC7514 from ambient; and JA, the thermal
impedance of the device package are used to
determine the maximum operating ambient
temperature.
Using the junction temperature rise equation
T = TJ - TA; the thermal impedance JA = 65.8C/W; and a
maximum junction temperature TJ-MAX = 110C, the equation
reduces to:
3.7 Thermal Design Assessment
T A – MAX = T J – MAX –  P TOTAL   JA 
A successful design utilizing the CPC7514 Quad High
Voltage Analog Switch Array is dependent on careful
consideration of the application’s environment and the
device’s thermal constraints. For matters regarding the
electrical design, this is simply a case of following the
parameters provided in the preceding tables and for
many this will be sufficient. However, those designers
wishing to push the operational limits envelope with
higher switch current and/or higher ambient operating
temperatures will need to consider the thermal
performance.
To avoid entering thermal shutdown, the value for the
maximum junction temperature was set to 110C.
Conversely, it is possible to rework the equations to
determine the maximum switch current for a maximum
ambient current.
When using the individual switches of the CPC7514
within their allowable operating region, no restrictions
are placed on any other switch.
Being a real physical device the CPC7514 has a finite
thermal capability that when properly considered will
ensure appropriate behavior and performance.
Determination of the thermal constraint is easily
accomplished using the following power equations:
P TOTAL = P V
DD
+ P SW
and
T
P TOTAL = -------- JA
Where PVDD is the dissipated power drawn from the
VDD supply and PSW is the power dissipated by the
active switches. The VDD power can be calculated
from the “VDD Voltage Supply Specifications” on
page 7 while the power dissipated by the switches is
the sum of the concurrent active switches. Total switch
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13
CPC7514
INTEGRATED CIRCUITS DIVISION
4. Manufacturing Information
4.1 Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the
latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee
proper operation of our devices when handled according to the limitations and information in that standard as well as
to any limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to
the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.
Device
Moisture Sensitivity Level (MSL) Rating
CPC7514Z
MSL 1
4.2 ESD Sensitivity
This product is ESD Sensitive, and should be handled according to the industry standard
JESD-625.
4.3 Reflow Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of
J-STD-020 must be observed.
Device
Maximum Temperature x Time
CPC7514Z
260°C for 30 seconds
4.4 Board Wash
IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to
remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or
Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be
used.
Pb
14
e3
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CPC7514
INTEGRATED CIRCUITS DIVISION
4.5 Mechanical Dimensions
4.5.1 CPC7514Z Package Dimensions
Recommended PCB Land Pattern
12.757 ± 0.254
(0.502 ± 0.010)
1.27
(0.050)
PIN 20
10.312 ± 0.381
(0.406 ± 0.015)
7.493 ± 0.127
(0.295 ± 0.005)
9.40
(0.370)
2.00
(0.079)
PIN 1
0.406 ± 0.076
(0.016 ± 0.003)
1.270 TYP
(0.050 TYP)
0.60
(0.024)
45º
2.337 ± 0.051
(0.092 ± 0.002)
0.649 ± 0.102
(0.026 ± 0.004)
0.203 ± 0.102
(0.008 ± 0.004)
0.889 ± 0.178
(0.035 ± 0.007)
0.254 / +0.051 / -0.025
(0.010 / +0.002 / -0.001)
DIMENSIONS
mm
(inches)
NOTES:
1. Coplanarity = 0.1016 (0.004) max.
2. Leadframe thickness does not include solder plating (1000 microinch maximum).
4.5.2 CPC7514ZTR Tape & Reel Specification
330.2 DIA.
(13.00 DIA)
Top Cover
Tape Thickness
0.102 MAX
(0.004 MAX)
W=24.00±0.3
(0.94)
B0=13.40±0.15
(0.53±0.006)
A0=10.75±0.15
(0.42±0.006)
K0=3.20±0.15
(0.126±0.006)
Embossed Carrier
K1=2.60±0.15
(0.10±0.006)
P=12.00
(0.47)
Dimensions
mm
(inches)
NOTE: Unless otherwise specified, all dimension tolerances per EIA-481
Embossment
For additional information please visit www.ixysic.com
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated
Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its
products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe property or
environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.
Specifications: DS-CPC7514-R06
© Copyright 2013, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
4/5/2013
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