DG9236 Datasheet

DG9236
Vishay Siliconix
Dual SPDT Analog Switch
DESCRIPTION
FEATURES
The DG9236 is a CMOS, dual SPDT analog switch designed
to operate from V+ = 2.7 V to V+ = 16 V max. operating,
single supply. All control logic inputs have a guaranteed
1.8 V logic high threshold when operation from a + 16 V
power supply. This makes the DG9236 ideally suited to
interface directly with low voltage micro-processor control
signals.
Processed with high density CMOS technology, the DG9236
while providing ultra low parasitic capacitance of 2 pF for
CS(OFF) and 8.4 pF for CD(ON). Other performance features
are: 3 dB bandwidth, 800 MHz, - 70 dB crosstalk and 62 dB
off isolation at 10 MHz frequency.
Key applications for the DG9236 are logic level translation,
pulse generator, and high speed or low noise signal
switching in precision instrumentations and portable device
designs.
The operation temperature range is specified from - 40 °C to
+ 85 °C. The DG9236 is available in space saving 1.4 mm x
1.8 mm miniQFN10 package.
•
•
•
•
•
•
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product with
lead (Pb)-free device termination. The miniQFN-10 package
has a nickel-palladium-gold device termination and is
represented by the lead (Pb)-free “-E4” suffix to the ordering
part number. The nickel-palladium-gold device terminations
meet all JEDEC standards for reflow and MSL rating.
•
•
•
•
Leakage current < 0.5 nA max. at 85 °C
Low switch capacitance (Csoff, 2 pF typ.)
RDS(on) 101  max. 800 MHz bandwidth
RoHS
Fully specified with single supply operation at 16 V COMPLIANT
Low voltage, 1.8 V CMOS/TTL compatible
Excellent isolation and crosstalk performance (typ. > - 60 dB
at 10 MHz)
Fully specified from - 40 °C to 85 °C
Latch-up current 300 mA per JESD78
Lead (Pb)-free low profile miniQFN-10 (1.4 mm x 1.8 mm
x 0.55 mm)
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
•
•
•
•
High-end data acquisition
Medical instruments
Precision instruments
High speed communications applications
Automated test equipment
Sample and hold applications
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG9236
miniQFN - 10L
S2A
7
S2B
6
V+ 8
A1 9
5 D2
4 D1
Logic
3 S1B
A0 10
1
Pin 1: LONG LEAD
2
GND S1A
Top View
3x
Pin 1
Device marking: 3x for DG9236
x = Date/Lot Traceability Code
TRUTH TABLE
Selected Input
On Switches
A1
A0
DG9236
X
0
D1 to S1A
X
1
D1 to S1B
0
X
D2 to S2A
1
X
D2 to S2B
Document Number: 67049
S11-0598-Rev. B, 25-Apr-11
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9236
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
- 40 °C to 85 °C
Package
10 pin miniQFN
Part Number
DG9236DN-T1-E4
Notes:
• - 40 °C to 85 °C datasheet limits apply.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Limit
V+ to GND
18
Digital Inputsa, VS, VD
Unit
V
(V+) + 0.3 or 30 mA, whichever occurs first
Continuous Current (Any Terminal)
30
Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle)
100
Storage Temperature
mA
- 65 to 150
°C
Power Dissipation (Package)b
10 pin miniQFNc, d
208
mW
Thermal Resistance (Package)b
10 pin miniQFN
357
°C/W
Notes:
a. Signals on SX, DX, or AX exceeding V+ or GND will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 2.6 mW/°C above 70 °C.
d. Manual soldering with iron is not recommended for leadless components. The miniQFN-10 is a leadless package. The end of the lead terminal
is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection.
SPECIFICATIONS (for 16 V Supply)
Parameter
Test Conditions
Unless Otherwise Specified
V+ = 16 V, VA0, A1 = 1.8 V, 0.5 Va
Temp.b
RDS(on)
IS = 1 mA,
VD = 0.7 V, 2.6 V, 8 V, 11 V, 15.3 V
Room
Full
101
145
160
RON
IS = 1 mA,
VD = 0.7 V, 2.6 V, 8 V, 11 V, 15.3 V
Room
Full
2
14
15
RFLATNESS
IS = 1 mA,
VD = 0.7 V, 2.6 V, 8 V, 11 V, 15.3 V
Room
Full
38
55
60
Room
Full
± 0.01
-1
-2
1
2
Room
Full
± 0.01
-1
-2
1
2
Symbol
- 40 °C to 85 °C
Typ.c
Min.d
Max.d
Unit
16
V
Analog Switch
Analog Signal Rangee
On-Resistance
On-Resistance Match
On-Resistance Flatness
Switch Off
Leakage Current
Channel On
Leakage Current
VANALOG
IS(off)
ID(off)
Full
V+ = 16 V,
VD = 1 V/15 V, VS = 15 V/1 V
ID(on)
V+ = 16 V, VD = VS 1 V/15 V
Room
Full
± 0.01
-1
-2
1
2

nA
Digital Control
Input Current, VIN Low
IIL
VAX = 0.5 V
Full
0.005
- 0.1
0.1
Input Current, VIN High
IIH
VAX = 1.8 V
Full
0.005
- 0.1
0.1
Input Capacitancee
CIN
f = 1 MHz
Room
3
Room
Full
30
70
80
Room
Full
17
55
65
Room
Full
19
25
µA
pF
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make
tBBM
RL = 300 , CL = 35 pF
see figure 1, 2
ns
1
1
Charge Injectione
QINJ
Vg = 0 V, Rg = 0 , CL = 1 nF
Room
6
Off Isolatione
OIRR
RL = 50 , CL = 5 pF, f = 10 MHz
Room
- 62
dB
BW
RL = 50 
Room
800
MHz
XTALK
RL = 50 , CL = 5 pF, f = 10 MHz
Room
- 70
dB
Bandwidthe
Channel-to-Channel
Crosstalke
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Document Number: 67049
S11-0598-Rev. B, 25-Apr-11
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9236
Vishay Siliconix
SPECIFICATIONS (for 16 V Supply)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 16 V, VA0, A1 = 1.8 V, 0.5 Va
- 40 °C to 85 °C
Temp.b
Typ.c
Min.d
Max.d
Unit
Dynamic Characteristics
Source Off Capacitancee
CS(off)
Channel On Capacitancee
CD(on)
Total Harmonic Distortione
THD
f = 1 MHz
Signal = 1 VRMS, 20 Hz to 20 kHz,
RL = 600 
Room
2
Room
8.4
Room
0.18
Room
Full
0.013
0.022
Room
Full
0.01
0.021
pF
%
Power Supplies
Power Supply Current
I+
VIN = 0 V, or V+
Ground Current
IGND
0.5
1.0
- 0.5
- 1.0
µA
SPECIFICATIONS (for 5 V Supply)
Parameter
Test Conditions
Unless Otherwise Specified
V+ = 5 V, VA0, A1 = 1.4 V, 0.5 Va
Temp.b
VANALOG
Full
RDS(on)
IS = 1 mA, VD = 0 V, 3 V, 3.5 V
Room
Full
301
365
380
RON
IS = 1 mA, VD = 0 V, 3 V, 3.5 V
Room
Full
3
14
15
Room
Full
± 0.01
-1
- 1.2
1
1.2
Room
Full
± 0.01
-1
- 1.2
1
1.2
Symbol
- 40 °C to 85 °C
Typ.c
Min.d
Max.d
Unit
5
V
Analog Switch
Analog Signal Rangee
On-Resistance
On-Resistance Match
IS(off)
Switch Off
Leakage Current
ID(off)
V+ = 5.5 V,
VD = 1 V/4.5 V, VS = 4.5 V/1 V
ID(on)
V+ = 5.5 V, VS = VD = 1 V/4.5 V
Room
Full
± 0.01
-1
- 1.2
1
1.2
Input Current, VIN Low
IL
VAX = 0.5 V
Full
0.005
- 0.1
0.1
Input Current, VIN High
IH
VAX = 1.4 V
Full
0.005
- 0.1
0.1
CIN
f = 1 MHz
Room
3
Room
Full
70
100
110
Room
Full
17
70
80
Room
Full
42
Channel On
Leakage Current

nA
Digital Control
Input Capacitance
µA
pF
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make-Time
tBMM
Full
2
f = 10 MHz, RL = 50 , CL = 5 pF
- 62
Room
- 70
BW
RL = 50 
Room
570
MHz
THD
Signal = 1 VRMS, 20 Hz to 20 kHz,
RL = 600 
Room
2.4
%
f = 1 MHz
Room
OIRR
Crosstalke
XTALK
Total Harmonic Distortion
e
5
1
Room
QINJ
Off-Isolatione
Bandwidth
ns
CL = 1 nF, RGEN = 0 , VGEN = 0 V
Charge Injectione
e
RL = 300 , CL = 35 pF
see figure 1, 2
Source Off Capacitancee
CS(off)
Channel On Capacitancee
CD(on)
pC
dB
2.1
pF
8.1
Power Supplies
Power Supply Current
I+
VIN = 0 V, or V+
Ground Current
Document Number: 67049
S11-0598-Rev. B, 25-Apr-11
IGND
Room
Full
0.001
Room
Full
- 0.001
0.5
1
- 0.5
-1
µA
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DG9236
Vishay Siliconix
SPECIFICATIONS (for 3 V Supply)
- 40 °C to + 85 °C
Test Conditions
Unless Otherwise Specified
V+ = 3 V, VA0, A1 = 1.4 V, 0.5 Va
Temp.b
VANALOG
Full
RDS(ON)
IS = 1 mA, VD = + 1.5 V
Room
Full
732
795
810
On-Resistance Match
RON
IS = 1 mA, VD = + 1.5 V
Room
Full
5
16
17
Switch Off
Leakage Current
(for 16 pin miniQFN)
IS(off)
Room
Full
± 0.01
-1
- 1.2
1
1.2
Room
Full
± 0.01
-1
- 1.2
1
1.2
Parameter
Symbol
Typ.c
Min.d
Max.d
Unit
3
V
Analog Switch
Analog Signal Rangee
On-Resistance
ID(off)
Channel On
Leakage Current
(for 16 pin miniQFN)
V+ = 3.3 V, V- = 0 V
VD = 1 V/3 V, VS = 3 V/1 V
ID(on)
V+ = 3.3 V, V- = 0 V,
VS = VD = 1 V/3 V
Room
Full
± 0.01
-1
- 1.2
1
1.2
Input Current, VIN Low
IL
VAX = 0.5 V
Full
0.005
- 0.1
0.1
Input Current, VIN High
IH
VAX = 1.4 V
Full
0.005
- 0.1
0.1
CIN
f = 1 MHz
Room
3.1
Room
Full
30
150
170
Room
Full
20
110
120
Room
Full
19
25

nA
Digital Control
Input Capacitance
µA
pF
Dynamic Characteristics
Enable Turn-On Time
tON
Enable Turn-Off Time
tOFF
Break-Before-Make-Time
tBMM
Charge Injectione
QINJ
Off-Isolatione
OIRR
Crosstalke
XTALK
Bandwidthe
Total Harmonic Distortion
e
e
RL = 300 , CL = 35 pF
see figure 1, 2
CL = 1 nF, RGEN = 0 , VGEN = 0 V
Full
1
f = 10 MHz, RL = 50 , CL = 5 pF
Room
- 63
Room
- 70
5
1
ns
not
limit
pC
dB
BW
RL = 50 
Room
183
MHz
THD
Signal = 1 VRMS, 20 Hz to 20 kHz,
RL = 600 
Room
5.5
%
f = 1 MHz
Room
Source Off Capacitance
CS(off)
Channel On Capacitancee
CD(on)
2.1
pF
8.3
Power Supplies
Power Supply Current
I+
VIN = 0 V, or V+
Ground Current
IGND
Room
Full
0.001
Room
Full
- 0.001
0.5
1
- 0.5
-1
µA
Notes:
a. VIN = input voltage to perform proper function.
b. Room = 25 ºC, Full = as determined by the operating temperature.
c. Typical value are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67049
S11-0598-Rev. B, 25-Apr-11
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DG9236
Vishay Siliconix
150
900
850
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
T = 25 °C
IS = 1 mA
VCC = 2.7 V
130
VCC = 12 V
120
VCC = 3.0 V
VCC = 5.0 V
110
VCC = 13.2 V
100
90
VCC = 14.6 V
80
70
VCC = 17.6 V
VCC = 16 V
60
50
40
30
20
10
VCC = 10.8 V
0
2
4
6
8
0
0
10
2
4
6
10
12
14
16
RON vs. VD and Single Supply Voltage
500
900
450
VCC = 5 V
IS = 1 mA
400
VCC = 3 V
IS = 1 mA
800
700
+ 85 °C
RON - On-Resistance ()
RON - On-Resistance ()
8
VD - Analog Voltage (V)
VD - Analog Voltage (V)
RON vs. VD and Single Supply Voltage
350
300
+ 25 °C
250
200
- 40 °C
150
600
+ 85 °C
500
+ 25 °C
400
300
100
200
50
100
0
- 40 °C
0
0
1
2
3
4
0
5
0.5
1
VD - Analog Voltage (V)
1.5
2
2.5
3
VD - Analog Voltage (V)
RON vs. Analog Voltage and Temperature
RON vs. Analog Voltage and Temperature
200
200
VCC = 12 V
IS = 1 mA
175
VCC = 16 V
IS = 1 mA
175
+ 85 °C
150
RON - On-Resistance ()
RON - On-Resistance ()
T = 25 °C
IS = 1 mA
140
RON - On-Resistance ()
RON - On-Resistance ()
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
+ 25 °C
125
100
75
- 40 °C
50
25
150
+ 85 °C
125
+ 25 °C
100
75
- 40 °C
50
25
0
0
0
2
4
6
8
10
12
VD - Analog Voltage (V)
RON vs. Analog Voltage and Temperature
Document Number: 67049
S11-0598-Rev. B, 25-Apr-11
14
0
5
10
15
20
VD - Analog Voltage (V)
RON vs. Analog Voltage and Temperature
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DG9236
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100 mA
V+ = 16 V
10 mA
VCC = 16 V
1 mA
I+ - Supply Current (A)
Supply Current (nA)
10
1
I+
0.1
IGND
0.01
100 µA
10 µA
1 µA
100 nA
10 nA
1 nA
- 40 °C
+ 85 °C
100 pA
10 pA
0.001
- 50
+ 25 °C
1 pA
0
50
100
150
0
2
4
6
8
10
12
14
16
Temperature (°C)
Temperature (°C)
Supply Current vs. VIN and Temperature
Supply Current vs. Temperature
10 mA
100 000
1 mA
VCC = + 13.2 V
10 000
V+ = 17.6 V
Leakage Current (pA)
ICC - Supply Current (A)
100 µA
10 µA
V+ = 16 V
1 µA
V+ = 12 V
V+ = 3 V
100 nA
V+ = 5 V
1000
ID(off)
100
10 nA
IS(off)
10
ID(on)
1 nA
100 pA
10
100
1K
10K
100K
1M
1
- 60 - 40 - 20
10M
0
20
Input Switching Frequency (Hz)
40
60
80
100 120 140
Temperature (°C)
Leakage Current vs. Temperature
Supply Current vs. Input Switching Frequency
100
100 000
80
V+ = 16 V
T = 25 °C
VCC = + 16 V
60
Leakage Current (pA)
Leakage Current (pA)
10 000
ID(off)
1000
ID(on)
100
IS(off)
10
40
IS(off)
ID(off)
20
0
- 20
ID(on)
- 40
- 60
- 80
1
- 50
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- 100
0
50
100
150
0
2
4
6
8
10
12
14
16
Temperature (°C)
VD - Analog Voltage (V)
Leakage Current vs. Temperature
Leakage Current vs. Analog Voltage
18
Document Number: 67049
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DG9236
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
200
500
V+ = 16 V
T = 85 °C
300
Leakage Current (pA)
tON(EN), tOFF(EN) - Switching Time (ns)
400
200
ID(off)
100
IS(off)
0
ID(on)
- 100
- 200
- 300
160
tON VCC = + 3 V
120
tON VCC = + 5 V
80
40
tOFF VCC = + 3 V
tOFF VCC = + 5 V
- 400
0
- 60 - 40 - 20
- 500
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
0
20
40
60
80
100 120 140
Temperature (°C)
VD - Analog Voltage (V)
Switching Time vs. Temperature tON/tOFF
Leakage Current vs. Analog Voltage
50
DG9236
40
120
tON VCC = + 12 V
tbbm - Switching Time (ns)
tON(EN), tOFF(EN) - Switching Time (ns)
140
30
tON VCC = + 16 V
20
tOFF VCC = + 12 V
100
tbbm VCC = + 3 V
80
60
tbbm VCC = + 5 V
40
tbbm VCC = + 12 V
10
20
tOFF VCC = + 16 V
0
- 60 - 40 - 20
0
20
40
60
80
0
- 60 - 40 - 20
100 120 140
tbbm VCC = + 16 V
0
20
Temperature (°C)
Switching Time vs. Temperature tON/tOFF
100 120 140
6
T = 25 °C
CL = 1 nF
4
V+ = 16 V
GND = 0 V
RL = 50 
Charge Injection (PC)
LOSS, OIRR, XTALK (dB)
80
LOSS
- 10
- 30
60
Switching Time vs. Temperature
0
- 20
40
Temperature (°C)
- 40
- 50
OIRR
- 60
XTALK
(Adjacent)
- 70
- 80
- 90
2
0
VCC = 17.6 V
VCC = 3 V
-2
VCC = 12 V
VCC = 5 V
-4
-6
- 100
- 110
100K
-8
1M
10M
100M
Frequency (Hz)
Insertion Loss, Off-Isolation,
Crosstalk vs. Frequency
Document Number: 67049
S11-0598-Rev. B, 25-Apr-11
1G
0
2
4
6
8
10
12
14
16
18
Source Volts
DG9236 BCFE-C Charge Injection Measured at
Drain CL = 1 nF
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DG9236
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.5
10 000 000
Ipos V + 17.6 V
1 000 000
1.3
Ipos V + 16 V
VT- Switching Threshold (V)
100 000
Power Supply Current (nA)
1.4
10 000
1000
100
10
1
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.01
0.5
Ipos V + 12 V
Ipos V + 5 V
0.001
0.4
0
2
4
6
8
10
12
14
16
18
2
20
4
6
8
VIN (V)
10
12
14
16
18
20
22
V + - Supply Voltage (V)
Supply Current vs. VIN and Temperature
Switching Threshold (Lower) vs.
Single Supply Voltage
100
DG 9236
V+ = 13.2 V
RL = 600 
VSignal = 1 VRMS
10
THD (%)
1
0.1
0.01
0.001
10
100
1000
10 000
100 000
Frequency (Hz)
THD vs. Frequency
TEST CIRCUITS
V+
V+
A0 or A1
50 Ω
t r < 5 ns
t f < 5 ns
VCC
S1A or S2A
V+
VAX
50 %
0V
S1B or S2B
VS1A or VS2A
VO
D1 or D2
GND
300 Ω
35 pF
90 %
90 %
VO
50 %
0V
t ON
t OFF
S1A or S2A ON
Figure 1. Enable Switching Time
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Document Number: 67049
S11-0598-Rev. B, 25-Apr-11
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DG9236
Vishay Siliconix
TEST CIRCUITS
V+
tr < 5 ns
tf < 5 ns
VCC
V+
V+
SxA - SxB
A0
50 %
VA0,A1
0V
A1
50 Ω
VSxA or VSxB
80 %
D1 or D2
GND
VO
VO
300 Ω
35 pF
0V
tD
Figure 2. Break-Before-Make
V+
t r < 5 ns
t f < 5 ns
V+
VCC
A0 or A1
ON
OFF
VAX
OFF
0V
Rg
SxA or SxB
VO
Vg
ΔVO
VO
D1 or D2
CL
1 nF
GND
Charge Injection = ΔVO X CL
Figure 3. Charge Injection
V+
V+
Network Analyzer
V+
V+
A0 or A1
Network Analyzer
V+
VIN
A0
S1A or S2A
Vg
Rg = 50 Ω
VIN
SxA or SxB
A1
Vg
VOUT
VOUT
D1 or D2
D1 or D2
GND
50 Ω
Insertion Loss = 20 log
VOUT
VIN
Figure 4. Insertion Loss
Document Number: 67049
S11-0598-Rev. B, 25-Apr-11
Rg = 50 Ω
GND
50 Ω
Off Isolation = 20 log
VOUT
VIN
Figure 5. Off-Isolation
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9236
Vishay Siliconix
TEST CIRCUITS
V+
V+
Network Analyzer
V+
A0 or A1
V+
S1A or S2A
VIN
Vg
Rg = 50
V+
V+
A0 or A1
D1 or D2
VOUT
S1A or S2A
|
to
|
S2A or S2B
Impedance
Analyzer
S1B or S2B
50 Ω
GND
D1 or D2
50 Ω
GND
Cross Talk = 20 log
VOUT
VIN
Figure 6. Crosstalk
V-
V-
Figure 7. Source/Drain Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67049.
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10
Document Number: 67049
S11-0598-Rev. B, 25-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
MINI QFN-10L CASE OUTLINE
DIM
MILLIMETERS
INCHES
MIN.
NAM.
MAX.
MIN.
NAM.
MAX.
A
0.45
0.55
0.60
0.0177
0.0217
0.0236
A1
0.00
-
0.05
0.000
-
0.002
b
0.15
0.20
0.25
0.006
0.008
0.010
0.150 or 0.127 REF (1)
c
0.006 or 0.005 REF (1)
D
1.70
1.80
1.90
0.067
0.071
0.075
E
1.30
1.40
1.50
0.051
0.055
0.059
e
0.40 BSC
0.016 BSC
L
0.35
0.40
0.45
0.014
0.016
0.018
L1
0.45
0.50
0.55
0.0177
0.0197
0.0217
Note
(1) The dimension depends on the leadframe that assembly house used.
ECN T16-0163-Rev. B, 16-May-16
DWG: 5957
Revision: 16-May-16
1
Document Number: 74496
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR MINI QFN 10L
1.700
(0.0669)
9x
0.563
(0.0221)
0.663
(0.0261)
0.200
(0.0079)
1
2.100
(0.0827)
0.400
(0.0157)
Pitch
10 x
0.225
(0.0089)
Mounting Footprint
Dimensions in mm (inch)
Document Number: 66554
Revision: 05-Mar-10
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1
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Disclaimer
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000