5962R88760

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Add vendor CAGE 01295. Add outline letter 2. Make changes to 1.3, table I,
and figure 1.
92-10-29
M. A. FRYE
B
Sheet 8. TABLE I. The conditions header column, delete “V+ = +15 V”,
“V- = -15 V” and substitute “V+ = +5 V” and “V- = 0 V”.
Changes in accordance with N.O.R. 5962-R181-94.
94-05-06
M. A. FRYE
C
Sheet 7. TABLE I. Input offset voltage test.
Device type 01. Group A subgroup 3, under maximum limit column,
delete “450 V” and substitute “900 V”.
Device type 02. Group A subgroup 3, under maximum limit column,
delete “750 V” and substitute “1500 V”.
Changes in accordance with N.O.R. 5962-R193-94.
94-07-08
M. A. FRYE
D
Drawing updated to reflect current requirements. Redrawn. - ro
02-03-13
R. MONNIN
E
Add case outline X and figure 1. Make changes to 1.2.2, 1.3, 3.2.1 and
figure 2. - ro
07-08-08
R. HEBER
10-12-13
C. SAFFLE
15-08-04
C. SAFFLE
Make correction to Input offset voltage test within +V = +5 V section under
Table I. For subgroup 2, under the condition column, delete VCM = 0.1 V for
the 900 V limit. For subgroup 2, under the condition column, add
F
VCM = 0.1 V for the 450 V limit. - ro
Add device type 03, case outline H, paragraphs 1.5, 3.2.3, 4.4.4.1, 4.4.4.1.1,
and table IIB. Add paragraph 3.1.1 and appendix A for microcircuit die. - ro
G
THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.
REV
SHEET
REV
G
G
G
G
G
G
G
G
G
G
G
G
SHEET
15
16
17
18
19
20
21
22
23
24
25
26
REV STATUS
REV
G
G
G
G
G
G
G
G
G
G
G
G
G
G
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
PREPARED BY
RICK OFFICER
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
D. H. JOHNSON
APPROVED BY
MICHAEL A. FRYE
DRAWING APPROVAL DATE
89-04-12
REVISION LEVEL
G
MICROCIRCUIT, LINEAR, DUAL, PRECISION,
OPERATIONAL AMPLIFIER, MONOLITHIC
SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-88760
1 OF 26
5962-E436-15
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M)
and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following examples.
For device class M and Q:
5962
-
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
88760
01
G
A
Device
type
(see 1.2.2)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
For device class V:
5962
R
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
88760
03
V
G
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
02
03
Circuit function
LT1013A
LT1013
RH1013
Dual precision operational amplifiers
Dual precision operational amplifiers
Radiation hardened, dual precision
operational amplifiers
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed
below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q
designators will not be included in the PIN and will not be marked on the device.
Device class
M
Q or V
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Certification and qualification to MIL-PRF-38535
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-88760
A
REVISION LEVEL
G
SHEET
2
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
Descriptive designator
Terminals
G
H
P
X
2
MACY1-X8
GDFP1-F10
GDIP1-T8 or CDIP2-T8
See figure 1
CQCC1-N20
8
10
8
8
20
Package style
Can
Glass sealed flat pack
Dual-in-line
Can
Square leadless chip carrier
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
1.3 Absolute maximum ratings. 1/
Positive supply voltage (+V) .........................................................................................
Negative supply voltage (-V) .........................................................................................
Power dissipation (PD) .................................................................................................
Differential input voltage ...............................................................................................
Input voltage :
Device types 01 and 02 .............................................................................................
Device type 03 ..........................................................................................................
+22 V dc
-22 V dc
500 mW 2/
30 V dc
Supply positive voltage
Equal to supply voltage
5 V below negative supply voltage
Output short circuit duration .......................................................................................... Indefinite 3/
Junction temperature (TJ) :
Cases G, P, X, and 2 ................................................................................................ +150C
Case H ...................................................................................................................... +175C
Storage temperature range ........................................................................................... -65C to +150C
Lead temperature:
Cases G, P and X (soldering, 10 seconds) ............................................................... +300C
Case H ..................................................................................................................... +300C
Case 2 (soldering, 60 seconds) ................................................................................. +260C
Thermal resistance, junction-to-case (JC) ................................................................... See MIL-STD-1835
Thermal resistance, junction-to-ambient (JA):
Cases G and X ..........................................................................................................
Case H ......................................................................................................................
Case P ......................................................................................................................
Case 2 .......................................................................................................................
+150C/W
+170C/W
+110C/W
+65C/W
1.4 Recommended operating conditions.
Positive supply voltage (+V) ......................................................................................... +15 V dc
Negative supply voltage (-V) ......................................................................................... -15 V dc
Common mode voltage (VCM) ...................................................................................... 0 V dc
Ambient operating temperature range (TA) .................................................................. -55C to +125C
1.5 Radiation features.
For device type 03:
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s) .................................. = 100 krads(Si) 4/
Maximum total dose available (dose rate = 10 mrads(Si)/s) ......................................... = 50 krads(Si) 4/
_____
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ Must withstand the added PD due to short circuit test; e.g., IOS.
3/ For device type 03, parameter is guaranteed by design, characterization, or correlation to the other tested parameters.
4/ The manufacturer supplying device type 03 has performed high dose rate irradiation test in accordance with MIL-STD-883
method 1019 condition A, and low dose rate irradiation test condition D. The device type 03 radiation end point limits for
the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a
maximum total dose of 100 krads(Si), and condition D to a maximum total dose of 50 krads(Si). Device type 03 may be
dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-88760
A
REVISION LEVEL
G
SHEET
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-88760
A
REVISION LEVEL
G
SHEET
4
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of
MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of
product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime 's agent,
and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore
documentation shall be made available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 049 (see MIL-PRF-38535, appendix A).
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-88760
A
REVISION LEVEL
G
SHEET
5
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/
-55C  TA +125C
unless otherwise specified
Group A
subgroups
Device
type
Unit
Limits 3/
Min
Max
Unless otherwise specified, +V = +15 V, -V = -15 V, VCM = 0 V
Input offset voltage
1
VIO
150
01
300
2,3
1
300
02
550
2,3
1
03
300
2,3
D
Input offset current
1
550
03
450
L
600
R
750
1
IIO
0.8
01
1.5
02
5
2,3
1
03
10
2,3
D
Input bias current
1
20
03
10
L
15
R
20
1
IIB
20
01
30
02
45
2,3
1
03
30
2,3
D
1
nA
30
2,3
1
nA
2.5
2,3
1
V
45
03
60
L
100
R
175
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-88760
A
REVISION LEVEL
G
SHEET
6
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/
-55C  TA +125C
unless otherwise specified
Group A
subgroups
Device
type
Unit
Limits 3/
Min
Max
Unless otherwise specified, +V = +15 V, -V = -15 V, VCM = 0 V - continued
Input voltage range
IVR
4/
1
13.5
01
13.0
2,3
1
13.5
02
13.0
2,3
D, L, R
Average temperature
coefficient of
offset voltage
Common mode rejection
ratio
Power supply rejection
ratio
VIO /
5/
1
03
-15.0
to 13.5
1
03
-15.0
to 13.5
4,5,6
01
2.0
02
2.5
T
CMRR
PSRR
VCM = +13.5 V, -15.0 V
4
VCM = +13.0 V, -14.9 V
5,6
VCM = +13.5 V, -15.0 V
4
VCM = +13.0 V, -14.9 V
5,6
4
01
100
02,03
94
-15.0 V
L
94
R
90
-V = -2 V to -18 V
03
97
01
103
2,3
1
18 V
D
1
dB
100
02,03
2,3
V = 10 V to
dB
97
D
1
V/C
97
VCM = +13.0 V,
+V = +2 V to +18 V,
V
100
97
03
100
L
94
R
86
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-88760
A
REVISION LEVEL
G
SHEET
7
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/
-55C  TA +125C
unless otherwise specified
Group A
subgroups
Device
type
Unit
Limits 3/
Min
Max
Unless otherwise specified, +V = +15 V, -V = -15 V, VCM = 0 V - continued
Output voltage swing
VOS
RL  2 k
4
13
01
12
5,6
4
02,03
Large signal voltage
gain
AVO
D, L, R
4
03
12.5
RL  2 k, VO = 10 V
4
01
1.5
5,6
4
ISY
02,03
1.2
0.25
RL  600 , VO = 10 V
4
03
0.5
RL  10 k,
D
4
03
500
VO = 10 V
L
100
R
50
No load, each amplifier
1
01
Power dissipation
PD
No load, each amplifier 6/
02,03
0.55
0.70
1
03
0.55
1
01
15
2,3
1
CS
7
RL = 2 k, TA = +25C 5/
RL = 2 k, 5/
VO = 10 V, TA = +25C
mW
18
02
16.5
2,3
Channel separation
mA
0.6
2,3
D, L, R
V/mV
0.5
2,3
1
V/V
0.5
5,6
Power supply current
12.5
11.5
5,6
RL  10 k
V
21
01,02
123
03
120
dB
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-88760
A
REVISION LEVEL
G
SHEET
8
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/
-55C  TA +125C
unless otherwise specified
Group A
subgroups
Device
type
Unit
Limits 3/
Min
Max
Unless otherwise specified, +V = +15 V, -V = -15 V, VCM = 0 V - continued.
Output short circuit
current
-IOS
Input resistance,
differential mode
RIN
Slew rate
+SR
1
TA = +25C 5/
01,02
-60
mA
60
+IOS
1
TA = +25C 5/
Rising edge,
7
VOUT = 5 V,
01
100
02,03
70
01,02,
03
0.2
03
0.13
M
V/s
TA = +25C, RL = 10 k,
AV = 1, measured from
-4 V to +4 V
D
-SR
L
0.11
R
0.07
Falling edge,
VOUT = 5 V,
01,02,
03
0.2
03
0.13
TA = +25C, RL = 10 k,
AV = 1, measured from
+4 V to -4 V
D
L
0.11
R
0.07
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-88760
A
REVISION LEVEL
G
SHEET
9
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/
-55C  TA +125C
unless otherwise specified
Group A
subgroups
Device
type
Unit
Limits 3/
Min
Max
Unless otherwise specified, +V = +15 V, -V = -15 V, VCM = 0 V - continued
Input offset voltage
match
VIO
1
Guaranteed by VIO limits
300
01
600
2,3
1
V
600
02
1100
2,3
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-88760
A
REVISION LEVEL
G
SHEET
10
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/
-55C  TA +125C
unless otherwise specified
Group A
subgroups
Device
type
Unit
Limits 3/
Min
Max
Unless otherwise specified, +V = +5 V, -V = 0 V, VCM = 0 V, VOUT = 1.4 V
Input offset voltage
1
VIO
VCM = 0.1 V
2
900
2
450
3
900
1
VCM = 0.1 V
D
1500
2
750
3
1500
Input offset current
03
450
2
750
3
750
1
03
600
L
750
R
900
1
IIO
01
1.3
2,3
1
02
2.0
10
03
10
2,3
D
1
nA
6.0
2,3
1
V
450
02
2
1
VCM = 0.1 V
250
01
20
03
10
L
15
R
20
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-88760
A
REVISION LEVEL
G
SHEET
11
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/
-55C  TA +125C
unless otherwise specified
Group A
subgroups
Device
type
Unit
Limits 3/
Min
Max
Unless otherwise specified, +V = +5 V, -V = 0 V, VCM = 0 V, VOUT = 1.4 V – continued.
Input bias current
1
IIB
01
35
2,3
1
80
02,03
50
2,3
D
Input voltage range
+IVR
1
VOS
80
R
200
TA = +25C 4/
D, L, R
Output voltage swing
03
125
D, L, R
-IVR
120
L
TA = +25C 4/
No load, output low
D
1
01,02
3.5
1,2
03
0 to
3.5
1
03
0 to
3.5
V
1
01,02
0
1,2
03
0 to
3.5
1
03
0 to
3.5
4
01,02,
03
25
03
25
L
40
R
50
No load, output high
D, L, R
Output low, ISINK = 1 mA
D
01,02,
03
4
03
4
01,02,
03
350
mV
03
0.6
V
1.0
R
1.6
D, L, R
mV
V
L
RL = 600 , output low
nA
01,02,
03
10
03
10
mV
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-88760
A
REVISION LEVEL
G
SHEET
12
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/
-55C  TA +125C
unless otherwise specified
Group A
subgroups
Device
type
Unit
Limits 3/
Min
Max
Unless otherwise specified, +V = +5 V, -V = 0 V, VCM = 0 V, VOUT = 1.4 V – continued.
Output voltage swing
VOS
4
RL = 600 , output high
D
03
3.4
3.0
R
2.8
5,6
RL = 600 , output high
ISY
3.4
L
RL = 600 , output low
Power supply current
01,02,
03
Per amplifier
1
01
15
02,03
18
01
3.2
02,03
3.1
01
1/
1
mA
0.55
02,03
2,3
D, L, R
mV
V
0.45
2,3
1
V
0.50
0.65
03
0.50
RHA device type 03 supplied to this drawing has been characterized through all levels D, L, and R of irradiation.
However, this device is tested at RHA level L and R level. Pre and Post irradiation values are identical unless otherwise
specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA = +25C.
2/
The manufacturer supplying device type 03 has performed high dose rate irradiation test in accordance with MIL-STD-883
method 1019 condition A, and low dose rate irradiation test condition D. The device type 03 radiation end point limits for the
noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a
maximum total dose of 100 krads(Si), and condition D to a maximum total dose of 50 krads(Si). Device type 03 may be
dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
3/
The limiting terms “min” (minimum) and “max” (maximum) shall be considered to apply to magnitudes only. Negative
current shall be defined as conventional current flow out of a device terminal.
4/
IVR is guaranteed by CMRR test.
5/
If not tested, shall be guaranteed to the limits specified in table I herein.
6/
Power dissipation is guaranteed by the power supply current limits.
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FIGURE 1. Case outline X.
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Symbol
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
A
.165
.185
4.19
4.70
b1
.016
.021
.41
.53
b2
.016
.024
.41
.61
D
.335
.370
8.51
9.40
D1
.305
.335
7.75
8.51
D2
.110
.160
2.79
4.06
e
.230 BSC
2
5.84 BSC
F
---
.040
---
1.02
K
.028
.034
.71
.86
K1
.027
.045
.69
1.14
3
L
.500
.750
12.70
19.05
2
L1
---
.050
---
1.27
2
Q
.010
.045
.25
1.14

Note
45
4
45
1, 5, 6
NOTES:
1/
The U.S. government preferred system of measurement is the metric SI system. However, since this item was
originally designed using inch-pound units of measurement, in the event of conflict between the metric and
inch-pound units, the inch-pound units shall take precedence.
2/
Diameter is uncontrolled in L1 and beyond form the reference plane.
3/
Measured from maximum diameter of the product.
4/
 is the basic spacing from the centerline of the tab to terminal 1, looking at the bottom of the package.
5/
Leads having a maximum diameter .019 inches measured in gauging plane .054 + .001 - .000 inches below the
base plane of the product shall be within .007 inches of their true position relative to a maximum width tab.
6/
This style package may be measured by direct methods or by gauge.
FIGURE 1. Case outline X - continued.
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Device types
01, 02, and 03
Case outlines
G, P, and X
Terminal
number
H
2
Terminal symbol
1
OUTPUT A
OUTPUT A
NC
2
-INPUT A
-INPUT A
OUTPUT A
3
+INPUT A
+INPUT A
NC
4
-V
NC
NC
5
+INPUT B
-V
-INPUT A
6
-INPUT B
NC
NC
7
OUTPUT B
+INPUT B
+INPUT A
8
+V
-INPUT B
NC
9
---
OUTPUT B
NC
10
---
+V
-V
11
---
---
NC
12
---
---
+INPUT B
13
---
---
NC
14
---
---
NC
15
---
---
-INPUT B
16
---
---
NC
17
---
---
OUTPUT B
18
---
---
NC
19
---
---
NC
20
---
---
+V
NC = No connection
FIGURE 2. Terminal connections.
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015.
(2) TA = +125C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for
groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified. Quality conformance inspection for device
class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for
device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
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TABLE IIA. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
1
1
1
1,2,3,4,5,6 1/
1,2,3,4,5,6 1/
1,2,3,4,5,6,7
1,2,3,4,5,6,7
1,2,3, 1/ 2/
4,5,6
1,2,3,4,5,6,7
1
1
1,2,3 2/
1
1
1,2,3
---
Device
class Q
Device
class V
---
1,7
1/ PDA applies to subgroup 1.
2/ Delta limits as specified in table IIB shall be required where specified, and the delta limits
shall be completed with reference to the zero hour electrical parameters (see table I).
TABLE IIB. Burn-in and operating life test delta parameters. TA = +25C. 1/
Parameters
Symbol
Endpoint limit
Delta limits
Min
Max
Min
Max
Units
Input offset voltage
VOS
-300
300
-200
200
V
Input bias current
+IB
-30
+30
-3
3
nA
-IB
-30
+30
-3
3
nA
1/ VS = 15 V and VCM = 0 V. Deltas are performed at room temperature.
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4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b.
TA = +125C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at
TA = +25C 5C, after exposure, to the subgroups specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019 conditions A to a maximum total dose of 100 krads(Si), and condition D to a maximum total dose of 50 krads (Si)
for device type 03.
4.4.4.1.1 Accelerated annealing test. Accelerated annealing tests shall be performed on all devices requiring a RHA level
greater than 5 krads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be
the pre-irradiation end-point electrical parameter limit at +25C 5C. Testing shall be performed at initial qualification and after
any process or design changes which may affect the RHA response of the device.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractorprepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
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6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein)
to DLA Land and Maritime-VA and have agreed to this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DLA Land and Maritime-VA.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-88760
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
R
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
88760
03
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
03
Generic number
Circuit function
RH1013DICE
Radiation hardened, dual precision
operational amplifiers
A.1.2.3 Device class designator.
Device class
Q or V
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-88760
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
03
A-1
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
03
A-1
A.1.2.4.3 Interface materials.
Die type
Figure number
03
A-1
A.1.2.4.4 Assembly related information.
Die type
Figure number
03
A-1
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-88760
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1.
A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.3 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-88760
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table II herein. Group E tests and conditions are as specified in paragraphs 4.4.4, 4.4.4.1,
and 4.4.4.1.1 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within MIL-HDBK-103 and QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to
DLA Land and Maritime -VA and have agreed to this drawing.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-88760
Pad number
Function
1
OUTPUT A
2
-INPUT A
3
+INPUT A
4
-V
5
+INPUT B
6
-INPUT B
7
OUTPUT B
8
+V
FIGURE A-1. Die bonding pad locations and electrical functions.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-88760
Die bonding pad locations and electrical functions.
Die physical dimensions.
Die size: 96 mils x 78 mils
Die thickness: 12 mils
Interface materials.
Top metallization: Al
Backside metallization: Alloyed gold layer
Glassivation.
Type: SiO2
Thickness: Minimum of 4 kÅ
Substrate: Single crystal silicon
Assembly related information.
Substrate potential: -V
Special assembly instructions:
The radiation hardened (rad hard) dice require special handling as compared to standard integrated circuit
dice. Radiation hardened dice are susceptible to surface damage due to the absence of silicon nitride
passivation that is present on most standard dice. Silicon nitride protects the dice surface from scratches by
its hard and dense properties. The passivation on manufacturer’s rad hard dice is silicon dioxide which is
much softer than silicon nitride. During the visual and preparation for shipment, electrostatic discharge (ESD)
safe tweezers are used and only the edge of the die are touched.
The manufacturer recommended that the dice handling be performed with extreme care so as to protect the
die surface from scratches. If the need arises to move the die in or out of the chip shipment tray (waffle pack),
use an ESD safe plastic tipped bent metal vacuum probe, preferably .020 inch x .010 inch (for use with tiny
parts). The wand should be compatible with continuous air vacuums. The tip material should be static
dissipative Delrin (or equivalent) plastic.
During die attach, care must be exercised to ensure no tweezers, or other equipment, touch the top of the
dice.
FIGURE A-1. Die bonding pad locations and electrical functions - Continued.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-88760
A
REVISION LEVEL
G
SHEET
26
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 15-08-04
Approved sources of supply for SMD 5962-88760 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-8876001GA
57300
LT-LT1013A-008-TO-01
60264
MTLT1013AQH
3/
MTL1013AMH
3/
LT1013AMH/883
01295
LT1013AMJGB
57300
LT-LT1013A-008-C-01
60264
MTLT1013AQD8
3/
LT1013AMJ8/883
57300
LT-LT1013A-008-TO-02
60264
MTLT1013AQH
01295
LT1013AMFKB
57300
LT-LT1013A-020-EC-01
60264
MTLT1013AQLS
57300
LT-LT1013-008-TO-01
60264
MTLT1013QH
3/
MTL1013MH
3/
LT1013MH/883
01295
LT1013MJGB
57300
LT-LT1013-008-C-01
60264
MTLT1013QD8
3/
LT1013MJ8/883
5962-8876001PA
5962-8876001XA
5962-88760012A
5962-8876002GA
5962-8876002PA
1 of 2
STANDARD MICROCIRCUIT DRAWING BULLETIN – CONTINUED.
DATE: 15-08-04
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-8876002XA
60264
MTLT1013QH
5962-88760022A
01295
LT1013MFKB
57300
LT-LT1013-020-EC-01
60264
MTLT1013QLS
5962R8876003VGA
64155
RH1013MH
5962R8876003VHA
64155
RH1013MW
5962R8876003VPA
64155
RH1013MJ8
5962R8876003V9A
64155
RH1013DICE
1/ The lead finish shown for each PIN representing a hermetic package
is the most readily available from the manufacturer listed for that part.
If the desired lead finish is not listed contact the vendor to determine
its availability.
2/ Caution. Do not use this number for item acquisition. Items acquired
to this number may not satisfy the performance requirements of this drawing.
3/ Not available from an approved source of supply.
Vendor CAGE
number
Vendor name
and address
01295
Texas Instruments, Inc.
Semiconductor Group
8505 Forest Lane
P.O. Box 660199
Dallas, TX 75243
Point of contact: U.S. Highway 75 South
P.O. Box 84, M/S 853
Sherman, TX 75090-9493
57300
Micross Components
7725 N. Orange Blossom Trail
Orlando, FL 32810-2696
60264
Minco Technology Labs, Inc.
1805 Rutherford Lane
Austin, TX 78754-5101
64155
Linear Technology Corporation
1630 McCarthy Blvd.
Milpitas, CA 95035-7417
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.
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