DG2017 Vishay Siliconix Low-Voltage, Low RON, Dual DPDT Analog Switch DESCRIPTION FEATURES The DG2017 is a dual DPDT (double-pole/double-throw), optimized for high performance analog switching, and specifically designed to benefit portable audio applications. One pair of double-throw switches is sub 1 for low impedance speaker performance while the second pair of double-throw switches is suitable for microphone applications. With the DPDT configuration, the DG2017 provides the flexibility for stereo-single-end or differential BTL output structures with a fully integrated differential microphone switching solution. The DG2017 is an integrated monolithic device in a QFN-16 (4 mm x 4 mm) package that provides a space saving solution over the use of multiple single SPDT devices as well as providing the advantage of on-resistance flatness and matching that single SPDT devices cannot offer. The DG2017 provides low charge injection (2 pC), fast switching time (tON and tOFF less than 100 ns), excellent Off-Isolation and Crosstalk (- 70 dB at 100 kHz). During operation, continuous current through any or all switches is rated at ± 200 mA, ideal for portable audio applications. Built on Vishay Siliconix’s low voltage CMOS process, the DG2017 contains an epitaxial layer that prevents latchup. Break-before-make is guaranteed. When on, each switch conducts equally well in both directions, and block up to the power supply level when off. • Low voltage operation (2 V to 5.5 V) • Low on-resistance at 2.7 V - RON: SW1, SW2 - 3.2 SW3, SW4 - 0.64 • Fast switching: tON = 46 ns tOFF = 21 ns • QFN-16 (4 mm x 4 mm) package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • • • • Space saving solution Low power consumption Guaranteed low voltage operation Low voltage logic compatible APPLICATIONS • Cellular Phones • • • • Integrated Speaker Switching Audio and Video Signal Routing PCMCIA Cards Battery Operated Systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION QFN-16 (4 x 4) COM1 NO1 16 15 V+ NC4 14 13 TRUTH TABLE NC1 1 12 COM4 IN1, IN2 2 11 NO4 NO2 3 10 IN3, IN4 4 9 NC3 COM2 5 6 NC2 GND 7 Logic NC1, 2, 3 and 4 NO1, 2, 3 and 4 0 ON OFF 1 OFF ON ORDERING INFORMATION Temp Range - 40 °C to 85 °C Package 16-pin QFN (4 x 4 mm) (Variation 1) Part Number DG2017DN-T1-E4 8 NO3 COM3 Top View Document Number: 72228 S13-1286-Rev. C, 27-May-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2017 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Limit Reference V+ to GND Unit - 0.3 to + 6 IN, COM, NC, NOa V - 0.3 to (V+ + 0.3) Current (Any terminal except NO, NC or COM) 30 Continuous Current (NO, NC, or COM) ± 200 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 300 Storage Temperature (D Suffix) mA - 65 to 150 d Package Solder Reflow Conditions 16-pin QFN (4 mm x 4 mm) 240 Power Dissipation (Packages)b QFN-16 (4 mm x 4 mm) 1880 °C mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 23.5 mW/°C above 70 °C. d. Manual soldering with iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.4 V or 1.6 Ve Limits - 40 °C to 85 °C Temp.a Min.b Full 0 Typ.c Max.b Unit V+ V Analog Switch Analog Signal Ranged VNO, VNC VCOM DC Characteristics On-Resistance RON Flatnessd RON Match d Switch Off Leakage Current Channel-On Leakage Current RON V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA (SW1, SW2) Room Full 3.2 3.7 4.3 RON V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA (SW3, SW4) Room Full 0.67 1.1 1.2 RON V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA (SW1, SW2) Room Full 1.4 2 RON V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA (SW3, SW4) Room Full 0.12 0.3 RON V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA (SW1, SW2) Room Full 0.3 RON V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA (SW3, SW4) Room Full 0.3 INO(off) INC(off) ICOM(off) ICOM(on) V+ = 3.3 V VNO, VNC = 0.3 V/3 V, VCOM = 0.3 V/3 V V+ = 3.3 V, VNO = VNC, VCOM = 0.3 V/3 V Room Full - 0.5 5 0.5 5 Room Full - 0.5 5 0.5 5 Room Full - 0.5 5 0.5 5 1.6 nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Cin Input Current www.vishay.com 2 IINL or IINH 0.4 Full VIN = 0 V or V+ For technical questions, contact: [email protected] Full 6 -1 V pF 1 µA Document Number: 72228 S13-1286-Rev. C, 27-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2017 Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.4 V or 1.6 Ve Limits - 40 °C to 85 °C Temp.a Min.b Typ.c Max.b 62 85 91 Unit Dynamic Characteristics Turn-On Time Room Full tON (SW3, SW4) Room Full 46 74 79 Room Full 12 35 36 Room Full 21 46 48 tON (SW1, SW2) Turn-Off Time tON (SW3, SW4) Break-Before-Make Time Charge Injection tON (SW1, SW2) d Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced VNO or VNC = 2 V, RL = 300 , CL = 35 pF (fig. 1, 2) ns td (SW1, SW2) Full 5 45 td (SW3, SW4) Full 5 26 QINJ (SW1, SW2) QINJ (SW3, SW4) CL = 1 nF, VGEN = 0 V, RGEN = 0 (fig. 3) 2 Room pC 1 OIRR (SW1, SW2) OIRR (SW3, SW4) XTALK (SW1, SW2) - 68 RL = 50 , CL = 5 pF, f = 1 MHz (fig. 4) - 51 Room dB - 69 XTALK (SW3, SW4) - 51 COFF (SW1, SW2) 12 COFF (SW3, SW4) CON (SW1, SW2) 43 VIN = 0 V or V+, f = 1 MHz Room pF 86 CON (SW3, SW4) 283 Power Supply Power Supply Range V+ 2 5.5 V VOE = 0 V or V+ 1 µA Power Supply Current I+ Notes: a. Room = 25 °C, full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 72228 S13-1286-Rev. C, 27-May-13 For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2017 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.600 6.00 T = 25 °C SW1 & SW2 IS = 10 mA R ON - On-Resistance (Ω) V+ = 2.3 V 4.00 V+ = 2.7 V V+ = 3.3 V 3.00 T = 25 °C SW3 & SW4 1.400 R ON - On-Resistance (Ω) 5.00 2.00 V+ = 5.0 V 1.200 1.000 V+ = 2.3 V, IS = 50 mA V+ = 2.7 V, IS = 100 mA 0.800 V+ = 3.3 V IS, = 100 mA 0.600 0.400 1.00 V+ = 5.0 V, IS = 100 mA 0.200 0.000 0.00 0 1 2 3 VCOM - Analog Voltage (V) 4 0 5 1 RON vs. VCOM and Single Supply Voltage 4 5 1.400 V+ = 2.7 V V+ = 2.7 V 85 °C 25 °C V+ = 5.0 V 85 °C 25 °C - 40 °C - 40 °C 4.00 3.00 2.00 V+ = 5.0 V 85 °C 1.200 R ON - On-Resistance (Ω) 5.00 R ON - On-Resistance (Ω) 3 RON vs. VCOM and Single Supply Voltage 6.00 85 °C 25 °C 25 °C 1.000 - 40 °C - 40 °C 0.800 0.600 0.400 SW3 and SW4 SW1 and SW2 1.00 0.200 IS = 10 mA IS = 100 mA 0.000 0.00 0 1 2 3 VCOM - Analog Voltage (V) 4 0 5 1 2 3 4 5 VCOM - Analog Voltage (V) RON vs. Analog Voltage and Temperature RON vs. Analog Voltage and Temperature 10 000 10 mA I+ - Supply Current (A) 1 mA I+ - Supply Current (nA) 2 VCOM - Analog Voltage (V) 1000 V+ = 5.0 V VIN = 0 V 100 V+ = 3 V 100 µA 10 µA 1 µA 100 nA 10 nA V+ = 3.0 V VIN = 0 V 10 - 60 1 nA 100 nA - 40 - 20 0 20 40 60 Temperature (°C) Supply Current vs. Temperature www.vishay.com 4 80 100 10 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency For technical questions, contact: [email protected] Document Number: 72228 S13-1286-Rev. C, 27-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2017 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 800 1000 600 INO(off), INC(off) Leakage Current (pA) Leakage Current (pA) V+ = 5.0 V 100 ICOM(on) 10 400 ICOM(on) 0 - 200 INO(off), INC(off) - 400 1 - 60 - 40 - 20 0 20 40 60 80 100 - 800 0.0 2.5 3.0 100 t ON / t OFF - Switching Time (μs) t ON / t OFF - Switching Time (μs) 2.0 Leakage vs. Analog Voltage tON V+ = 2 V 80 tON V+ = 3 V 60 40 tON V+ = 5 V 20 tOFF V+ = 2 V tOFF V+ = 3 V - 20 0 20 40 Temperature (°C) 60 80 60 tON V+ = 3 V 40 tOFF V+ = 2 V tON V+ = 5 V 20 tOFF V+ = 5 V tOFF V+ = 3 V tOFF V+ = 5 V - 40 tON V+ = 2 V 80 0 - 60 100 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Switching Time vs. Temperature Switching Time vs. Temperature 10 10 0 0 Loss Loss - 10 Loss, OIRR, X TALK (dB) XTA LK - 20 OIRR - 30 - 40 - 50 DG2017 SW1 and SW2 V+ = 3 V RL = 50 Ω - 60 - 70 - 80 - 90 100 K 1.5 Leakage Current vs. Temperature 100 - 10 1.0 VCOM, V NO, V NC - Analog Voltage (V) 140 0 - 60 0.5 Temperature (°C) 160 120 V+ = 3 V - 600 ICOM(off) Loss, OIRR, X TALK (dB) ICOM(off) 200 XTA LK - 20 OIRR - 30 - 40 - 50 DG2017 SW3 and SW4 V+ = 3 V RL = 50 Ω - 60 - 70 - 80 1M 10 M Frequency (Hz) 100 M Insertion Loss, Off-Isolation Crosstalk vs. Frequency Document Number: 72228 S13-1286-Rev. C, 27-May-13 1G - 90 100 K 1M 10 M Frequency (Hz) 100 M 1G Insertion Loss, Off-Isolation, Crosstalk vs. Frequency For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2017 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 60 2.5 40 Q - Charge Injection (pC) VT - Switching Threshold (V) V+ = 3 V 2.0 1.5 1.0 0.5 20 SW1 and SW2 0 - 20 SW3 and SW4 - 40 0.0 0 1 2 3 4 5 6 - 60 0.0 7 0.5 V+ - Supply Voltage (V) 1.0 1.5 2.0 2.5 3.0 VCOM - Analog Voltage (V) Switching Threshold vs. Supply Voltage Charge Injection vs. Analog Voltage TEST CIRCUITS V+ Logic Input V+ NO or NC Switch Input 50 % tr < 5 ns tf < 5 ns VINL Switch Output COM VINH VOUT 0.9 x V OUT IN Logic Input RL 300 Ω GND Switch Output CL 35 pF 0V tOFF tON 0V Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT = VCOM RL R L + R ON Figure 1. Switching Time V+ Logic Input V+ NO COM VO VNO VNC VINH tr < 5 ns tf < 5 ns VINL NC RL 300 Ω IN GND CL 35 pF VNC = V NO VO 90 % Switch 0V Output tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 72228 S13-1286-Rev. C, 27-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2017 Vishay Siliconix TEST CIRCUITS V+ Rgen ΔVOUT V+ VOUT NC or NO COM VOUT + IN Vgen IN CL = 1 nF VIN = 0 - V+ On Off On GND Q = ΔVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection V+ 10 nF V+ NC or NO IN COM COM RL Analyzer 0V, 2.4 V GND VCOM Off Isolation = 20 log V NO/ NC Figure 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72228. Document Number: 72228 S13-1286-Rev. C, 27-May-13 For technical questions, contact: [email protected] www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix QFN 4x4-16L Case Outline (5) (4) VARIATION 1 MILLIMETERS(1) DIM VARIATION 2 MILLIMETERS(1) INCHES INCHES MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. A 0.75 0.85 0.95 0.029 0.033 0.037 0.75 0.85 0.95 0.029 0.033 0.037 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 0.35 0.010 0.014 0.25 0.35 0.010 2.2 0.079 0.087 2.5 2.7 0.098 A3 b 0.20 ref. 0.25 D D2 0.30 0.008 ref. 4.00 BSC 2.0 2.1 0.012 0.20 ref. 0.157 BSC 0.083 0.30 4.00 BSC 2.6 e 0.65 BSC 0.026 BSC 0.65 BSC E 4.00 BSC 0.157 BSC 4.00 BSC E2 2.0 K L 2.1 2.2 0.079 0.20 min. 0.5 0.6 0.083 0.087 2.5 0.008 min. 0.7 0.020 0.024 0.008 ref. 2.6 0.3 0.4 0.014 0.157 BSC 0.102 0.106 0.026 BSC 0.157 BSC 2.7 0.098 0.20 min. 0.028 0.012 0.102 0.106 0.008 min. 0.5 0.012 0.016 N(3) 16 16 16 16 Nd(3) 4 4 4 4 Ne(3) 4 4 4 4 0.020 Notes (1) Use millimeters as the primary measurement. (2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994. (3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively. (4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip. (5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) Package warpage max. 0.05 mm. ECN: S13-0893-Rev. B, 22-Apr-13 DWG: 5890 Revision: 22-Apr-13 Document Number: 71921 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000