DG2015 Datasheet

DG2015
Vishay Siliconix
Low-Voltage, Low RON, Dual DPDT Analog Switch
DESCRIPTION
FEATURES
The DG2015 is a dual double-pole/double-throw monolithic
CMOS analog switch designed for high performance
switching of analog signals. Combining low power, high
speed, low on-resistance and small physical size, the
DG2015 is ideal for portable and battery powered
applications requiring high performance and efficient use of
board space.
The DG2015 is built on Vishay Siliconix’s low voltage JI2
process. An epitaxial layer prevents latchup. Break-beforemake is guaranteed.
The switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
•
•
•
•
Low Voltage Operation (2.7 V to 3.3 V)
Low On-Resistance - RON: 0.85 
3 dB Loss at 100 MHz
Fast Switching: tON = 40 ns
tOFF = 35 ns
• QFN-16 Package
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
BENEFITS
•
•
•
•
•
Reduced Power Consumption
High Accuracy
Reduced Board Space
Reduce Board Space
TTL/1.8 V Logic Compatible
APPLICATIONS
•
•
•
•
•
Cellular Phones
Speaker Headset Switching
Audio and Video Signal Routing
PCMCIA Cards
Battery Operated Systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2015
QFN-16 (4 x 4)
NC1 COM1 GND COM4
16
NO1
15
14
13
1
12
NC4
11
NO4
TRUTH TABLE
INA
2
NO2
3
10
INB
NC2
4
9
NO3
5
6
COM2
V+
7
Logic
NC1, 2, 3 and 4
NO1, 2, 3 and 4
0
ON
OFF
1
OFF
ON
8
COM3 NC3
Top View
ORDERING INFORMATION
Temp Range
- 40 °C to 85 °C
Document Number: 71971
S13-1282-Rev. D, 27-May-13
For technical questions, contact: [email protected]
Package
16-pin QFN
(4 mm x 4 mm)
(Variation 1)
Part Number
DG2015DN-T1-E4
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG2015
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Limit
Reference V+ to GND
Unit
- 0.3 to + 6
IN, COM, NC, NOa
V
- 0.3 to (V+ + 0.3)
Current (Any terminal except NO, NC or COM)
30
Continuous Current (NO, NC, or COM)
± 150
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 200
Storage Temperature (D Suffix)
mA
- 65 to 150
d
Package Solder Reflow Conditions
16-pin QFN (4 mm x 4 mm)
240
Power Dissipation (Packages)b
QFN-16c
1880
°C
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 23.5 mW/°C above 70 °C.
d. Manual soldering with iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.4 V or 2 Ve
Limits
- 40 °C to 85 °C
Temp.a
Min.b
Full
0
Typ.c
Unit
Max.b
Analog Switch
Analog Signal Ranged
On-Resistance
RON Flatness
RON Match
Switch Off
Leakage Current
Channel-On
Leakage Current
Digital Control
VNO, VNC
VCOM
RON
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA
RON
Flatness
RON
V+ = 2.7 V, VCOM = 0 V to V+, INO, INC = 100 mA
INO(off)
INC(off)
ICOM(off)
ICOM(on)
V+ = 3.3 V
VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
Room
Full
0.85
Room
0.16
Room
0.15
1
10
Room
Full
Room
Full
-1
- 10
-1
- 10
1
10
1
10
2
VINH
Full
VINL
Full
Cin
IINL or IINH
Input Current
0.4
Full
VIN = 0 V or V+

-1
- 10
Input Low Voltage
Full
4
-1
V
1.6
1.7
Room
Full
Input High Voltage
Input Capacitance
V+
nA
V
pF
1
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
d
Charge Injection
d
td
QINJ
Off-Isolation
OIRR
Crosstalkd
XTALK
NO, NC Off Capacitanced
Channel-On Capacitanced
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2
VNO or VNC = 2 V, RL = 300 , CL = 35 pF
Room
Full
Room
Full
Full
40
35
1
Room
7
RL = 50 , CL = 5 pF, f = 1 MHz
Room
- 67
Room
- 70
Room
63
CNC(off)
Room
67
Room
200
Room
196
CNC(on
VIN = 0 V or V+, f = 1 MHz
For technical questions, contact: [email protected]
ns
3
CL = 1 nF, VGEN = 0 V, RGEN = 0 
CNO(off)
CNO(on)
65
67
60
62
pC
dB
pF
Document Number: 71971
S13-1282-Rev. D, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG2015
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
Parameter
Limits
- 40 °C to 85 °C
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.4 V or 2 Ve
Symbol
Temp.a
Min.b
Typ.c
Unit
Max.b
Power Supply
Power Supply Range
V+
Power Supply Current
I+
Power Consumption
PC
2.7
VIN = 0 V or V+
3.3
V
Full
1
µA
Full
3.3
µW
Notes:
a. Room = 25 °C, full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.5
T = 25 °C
IS = 100 mA
IS = 100 mA
2.0
RON - On-Resistance (Ω)
R ON - On-Resistance (Ω)
2.0
2.5
1.5
V+ = 3.0 V,
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
V+ = 3 V
85 °C
1.5
25 °C
- 40 °C
1.0
0.5
0.0
0.0
3.0
0.5
VCOM - Analog Voltage (V)
RON vs. VCOM and Supply Voltage
1.5
2.0
2.5
3.0
RON vs. Analog Voltage and Temperature
100
10 mA
V+ = 3 V
VIN = 0 V
1 mA
I+ - Supply Current (A)
I+ - Supply Current (nA)
1.0
VCOM - Analog Voltage (V)
10
1
V+ = 3 V
100 µA
10 µA
1 µA
100 nA
10 nA
1 nA
0.1
- 60
100 pA
- 40
- 20
0
20
40
60
80
Temperature (°C)
Supply Current vs. Temperature
Document Number: 71971
S13-1282-Rev. D, 27-May-13
100
10
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
For technical questions, contact: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG2015
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
800
1000
600
Leakage Current (pA)
Leakage Current (pA)
V+ = 3 V
100
ICOM(on)
ICOM(off)
10
INO(off), IINC(off)
V+ = 3 V
ICOM(off)
400
ICOM(on)
200
0
- 200
INO(off), IINC(off)
- 400
- 600
1
- 60
- 40
- 20
0
20
40
60
80
100
- 800
0.0
Temperature (°C)
0.5
Leakage Current vs. Temperature
2.5
3.0
LOSS
- 10
Loss, OIRR, X TALK (dB)
50
tON V+ = 3 V
40
tOFF V+ = 3 V
30
- 30
- 50
OIRR
XTA LK
V+ = 3 V
RL = 50 Ω
- 70
- 40
- 20
0
20
40
60
80
- 90
100 K
100
1M
Temperature (°C)
10 M
100 M
1G
Frequency (Hz)
Switching Time vs. Temperature
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
3.0
30
2.5
25
Q - Charge Injection (pC)
- Switching Threshold (V)
2.0
10
20
- 60
VT
1.5
Leakage vs. Analog Voltage
60
t ON / t OFF - Switching Time (μs)
1.0
VCOM, V NO, V NC - Analog Voltage (V)
2.0
1.5
1.0
20
15
V+ = 3 V
10
5
0.5
0
0.0
0
1
2
3
4
5
V+ - Supply Voltage (V)
6
7
0
1
2
3
4
VCOM - Analog Voltage (V)
5
6
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
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For technical questions, contact: [email protected]
Document Number: 71971
S13-1282-Rev. D, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG2015
Vishay Siliconix
TEST CIRCUITS
V+
VINH
Logic
Input
V+
NO or NC
Switch
Input
VINL
Switch Output
COM
tr < 5 ns
tf < 5 ns
50 %
VOUT
0.9 x V OUT
IN
Logic
Input
RL
300 Ω
GND
Switch
Output
CL
35 pF
0V
tOFF
tON
0V
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
V OUT = V COM
RL
R L + R ON
Figure 1. Switching Time
V+
Logic
Input
V+
VNO
VNC
COM
NO
VINH
tr < 5 ns
tf < 5 ns
VINL
VO
NC
RL
300 Ω
IN
CL
35 pF
GND
VNC = V NO
VO
90 %
Switch
0V
Output
tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
Rgen
ΔVOUT
V+
COM
NC or NO
VOUT
VOUT
+
IN
IN
Vgen
CL = 1 nF
VIN = 0 – V+
On
Off
On
GND
Q = ΔVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
Document Number: 71971
S13-1282-Rev. D, 27-May-13
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG2015
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
NC or NO
0V, 2.4 V
IN
COM
COM
RL
Analyzer
GND
VCOM
Off Isolation = 20 log V
NO/ NC
Figure 4. Off-Isolation
V+
10 nF
V+
COM
Meter
IN
0 V, 2.4 V
NC or NO
HP4192A
Impedance
Analyzer
or Equivalent
GND
f = 1 MHz
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71971.
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For technical questions, contact: [email protected]
Document Number: 71971
S13-1282-Rev. D, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
QFN 4x4-16L Case Outline
(5)
(4)
VARIATION 1
MILLIMETERS(1)
DIM
VARIATION 2
MILLIMETERS(1)
INCHES
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.75
0.85
0.95
0.029
0.033
0.037
0.75
0.85
0.95
0.029
0.033
0.037
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
0.35
0.010
0.014
0.25
0.35
0.010
2.2
0.079
0.087
2.5
2.7
0.098
A3
b
0.20 ref.
0.25
D
D2
0.30
0.008 ref.
4.00 BSC
2.0
2.1
0.012
0.20 ref.
0.157 BSC
0.083
0.30
4.00 BSC
2.6
e
0.65 BSC
0.026 BSC
0.65 BSC
E
4.00 BSC
0.157 BSC
4.00 BSC
E2
2.0
K
L
2.1
2.2
0.079
0.20 min.
0.5
0.6
0.083
0.087
2.5
0.008 min.
0.7
0.020
0.024
0.008 ref.
2.6
0.3
0.4
0.014
0.157 BSC
0.102
0.106
0.026 BSC
0.157 BSC
2.7
0.098
0.20 min.
0.028
0.012
0.102
0.106
0.008 min.
0.5
0.012
0.016
N(3)
16
16
16
16
Nd(3)
4
4
4
4
Ne(3)
4
4
4
4
0.020
Notes
(1) Use millimeters as the primary measurement.
(2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994.
(3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively.
(4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip.
(5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body.
(6) Package warpage max. 0.05 mm.
ECN: S13-0893-Rev. B, 22-Apr-13
DWG: 5890
Revision: 22-Apr-13
Document Number: 71921
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000