INTERSIL HS-26CT32RH-T

HS-26CT32RH-T
Data Sheet
Radiation Hardened
Quad Differential Line Receiver
July 1999
• QML Class T, Per MIL-PRF-38535
The Intersil HS-26CT32RH-T is a Quad Differential Line
Receiver designed for digital data transmission over
balanced lines and meets the requirements of EIA Standard
RS-422. Radiation Hardened CMOS processing assures low
power consumption, high speed, and reliable operation in
the most severe radiation environments.
The HS-26CT32RH-T has an input sensitivity of 200mV (typ.)
over the common mode input voltage range of ±7V. The
receivers are also equipped with input fail safe circuitry, which
causes the outputs to go to a logic “1” when the inputs are
open. TTL compatible Enable and Disable functions are
common to all four receivers.
• Radiation Performance
- Gamma Dose . . . . . . . . . . . . . . . . . . . . 1 x 105 RAD(Si)
- SEU and SEL . . . . . . . . . . Immune to 100MeV/mg/cm2
• EIA RS-422 Compatible Inputs
• TTL Compatible Enable Inputs
• Input Fail Safe Circuitry
• High Impedance Inputs when Disabled or Powered Down
• Low Power Dissipation 138mW Standby (Max)
• Single 5V Supply
• Full -55oC to 125oC Military Temperature Range
Pinouts
HS1-26CT32RH-T (SBDIP) CDIP2-T16
TOP VIEW
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
TEMP.
RANGE (oC)
16 VDD
AIN 2
15 BIN
AOUT 3
14 BIN
13 BOUT
COUT 5
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Ordering Information
AIN 1
ENABLE 4
Detailed Electrical Specifications for the HS-26CT32RH-T
are contained in SMD 5962-95631. A “hot-link” is provided
from our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
PART
NUMBER
4593.1
Features
Intersil’s Satellite Applications FlowTM (SAF) devices are fully
tested and guaranteed to 100kRAD total dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
ORDERING
NUMBER
File Number
12 ENABLE
CIN 6
11 DOUT
CIN 7
10 DIN
GND 8
9 DIN
HS9-26CT32RH-T (FLATPACK), CDFP4-F16
TOP VIEW
AIN
1
16
VDD
AIN
2
15
BIN
AOUT
3
14
BIN
ENABLE
4
13
BOUT
5962R9563101TEC
HS1-26CT32RH-T
-55 to 125
COUT
5
12
ENABLE
HS1-26CT32RH/Proto
HS1-26CT32RH/Proto
-55 to 125
CIN
6
11
DOUT
CIN
7
10
DIN
GND
8
9
DIN
5962R9563101TXC
HS9-26CT32RH-T
-55 to 125
HS9-26CT32RH/Proto
HS9-26CT32RH/Proto
-55 to 125
NOTE: Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
HS-26CT32RH-T
Functional Diagram
ENABLE
ENABLE DIN DIN
+
-
DOUT
CIN CIN
BIN BIN
AIN AIN
+
+
+
-
COUT
-
BOUT
-
AOUT
TRUTH TABLE
INPUTS
2
OUTPUT
DEVICE POWER
ON/OFF
ENABLE
ENABLE
INPUT
OUT
ON
0
1
X
HI-Z
ON
1
X
VID ≥ VTH (Max)
1
ON
1
X
VID ≤ VTH (Min)
0
ON
X
0
VID ≥ VTH (Max)
1
ON
X
0
VID ≤ VTH (Min)
0
ON
1
X
Open
1
ON
X
0
Open
1
HS-26CT32RH-T
Die Characteristics
DIE DIMENSIONS:
BACKSIDE FINISH:
2140µm x 3290µm x 533µm ±25.4µm
Silicon
(85 x 130 x 21mils ±1mil)
PASSIVATION:
METALLIZATION:
Type: SiO2
Thickness: 8kÅ ±1kÅ
M1: Mo/Tiw
Thickness: 5800Å
WORST CASE CURRENT DENSITY:
M2: Al/Si/Cu
< 2.0e5 A/cm2
Thickness: 10kÅ ±1kÅ
TRANSISTOR COUNT:
SUBSTRATE POTENTIAL:
315
Internally connected to VDD. May be left floating.
PROCESS:
Radiation Hardened CMOS, AVLSI
Metallization Mask Layout
HS-26CT32RH-T
AIN
(1)
VDD
(16)
BIN
(15)
(14) BIN
AIN (2)
(13) BOUT
AOUT (3)
ENAB (4)
(12) ENAB
COUT (5)
(11) DOUT
(10) DIN
CIN (6)
(7)
CIN
(8)
GND
(9)
DIN
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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