DG2511, DG2512, DG2513 Vishay Siliconix Low-Voltage, Low RON, Single Analog Switch In miniQFN-6 Package DESCRIPTION The DG2511, DG2512, DG2513 are low on-resistance, single-pole/double-throw or single-pole/single-throw monolithic CMOS analog switch. It is designed for low voltage applications. The DG2511, DG2512, DG2513 are ideal for portable and battery powered equipment, requiring high performance and efficient use of board space. In additional to the low on-resistance (1.3 at 2.7 V). The DG2511 is an SPDT and the DG2512, DG2513 are SPST. The switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FEATURES • Low voltage operation (1.8 V to 5.5 V) • • • • • BENEFITS • • • • • The DG2511, DG2512, DG2513 are built on Vishay Siliconix’s low voltage JI5L process. An epitaxial layer prevents latchup. Break-before-make is guaranteed. The DG2511, DG2512, DG2513 represents a breakthrough in packaging development for analog switching products. The miniQFN-6 package (1.2 x 1 mm). Low on-resistance - RON: 1.3 at 2.7 V Low charge injection RoHS COMPLIANT Latch-up current > 300 mA (JESD78A) miniQFN-6 package (1.2 x 1 mm) Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Reduced power consumption Simple logic interface High accuracy Reduce board space Guaranteed 2 V operation APPLICATIONS As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For analog switching products manufactured with NiPdAu device terminations, the lead (Pb)-free "-E4" suffix is being used as a designator. • • • • • • • Cellular phones Communication systems Portable test equipment Battery operated systems Sample and hold circuits ADC and DAC applications Low voltage data acquisition systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG2511 miniQFN-6 DG2513 miniQFN-6 DG2512 miniQFN-6 NO 1 6 IN NC 1 6 IN NO 1 6 IN GND 2 5 V+ GND 2 5 V+ GND 2 5 V+ NC 3 4 COM NC 3 4 COM NO 3 4 COM Top View Top View Top View TRUTH TABLE Ax Pin 1 Device Marking: Ax for DG2511 Bx for DG2512 Cx for DG2513 x = Date/Lot Traceability Code Note: Pin 1 has long lead Document Number: 74454 S12-1989–Rev. D, 20-Aug-12 Logic NC 0 On NO Off 1 Off On COMMERCIAL ORDERING INFORMATION Temp Range Package - 40 °C to 85 °C miniQFN-6 Lead (Pb)-free with Tape and Reel For more information please contact: [email protected] Part Number DG2511DN-T1-E4 DG2512DN-T1-E4 DG2513DN-T1-E4 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2511, DG2512, DG2513 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Reference V+ to GND Unit - 0.3 to + 6 V - 0.3 to (V+ + 0.3) IN, COM, NC, NOa Continuous Current (NO, NC, COM pins) ± 150 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 300 Storage Temperature D Suffix Power Dissipation (Packages)b miniQFN-6c mA - 65 to 150 °C 160 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2 mW/°C above 70 °C. SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, ± 10 %,VIN = 0.4 V or 2 Ve Limits - 40 °C to 85 °C Temp.a Min.b Full 0 Typ.c Max.b Unit V+ V 1.7 1.9 0.15 Analog Switch VNO, VNC, VCOM Analog Signal Ranged RON On-Resistance RON RON Match RON Flatness Switch Off Leakage Current f RON Flatness INO(off) INC(off) ICOM(off) Channel-On Leakage Currentf ICOM(on) V+ = 2.7 V, VCOM = 0.5 V/1.5 V INO, INC = 100 mA V+ = 3.3 V, VNO, VNC= 1 V/3 V, VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V Room Full Room 1.4 Room 0.3 Room Full -2 - 20 2 20 Room Full Room Full -2 - 20 -2 - 20 2 20 2 20 1.6 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Cin IINL or IINH 0.4 0.4 Full 4 VIN = 0 or V+ Full V+ = 2.7 V, VNO or VNC = 1.5 V, RL = 50 , CL = 35 pF Room Full Room Full Room CL = 1 nF, VGEN = 0 V, RGEN = 0 Room 3 RL = 50 , CL = 5 pF, f = 1 MHz Room - 58 Room - 64 Room 21 Room 61 1 nA V pF 1 µA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time tBBM Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel-On Capacitanced CNO(off) CNC(off) CON Power Supply Power Supply Range V+ Power Supply Current I+ www.vishay.com 2 VIN = 0 or V+, f = 1 MHz 18 7 1 For more information please contact: [email protected] ns 12 1.8 VIN = 0 or V+ 43 49 32 34 0.01 pC dB pF 5.5 V 1 µA Document Number: 74454 S12-1989–Rev. D, 20-Aug-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2511, DG2512, DG2513 Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 5 V, ± 10 %, VIN = 0.6 V or 1.8 Ve Limits - 40 °C to 85 °C Temp.a Min.b Full 0 Typ.c Max.b Unit V+ V 1.3 1.45 0.15 Analog Switch Analog Signal Ranged On-Resistance VNO, VNC, VCOM RON RON RON Match RON Flatness Switch Off Leakage Current RON Flatness INO(off) INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 4.5 V, VCOM = 0.5 V/2.5 V, INO, INC = 100 mA V+ = 5.5 V, VNO, VNC= 1 V/4.5 V, VCOM = 4.5 V/1 V V+ = 5.5 V, VNO, VNC = VCOM = 1 V/4.5 V Room Full Room 1 Room 0.3 Room Full -2 - 20 2 20 Room Full Room Full -2 - 20 -2 - 20 2 20 2 20 1.8 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Cin IINL or IINH 0.4 0.6 Full 4 VIN = 0 or V+ Full VNO or VNC = 2.5 V, RL = 50 , CL = 35 pF Room Full Room Full Room CL = 1 nF, VGEN = 0 V, RGEN = 0 Room 14 Room - 58 Room - 64 Room 19 Room 61 1 nA V pF 1 µA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time tBBM Charge Injectiond QINJ Off-Isolation d Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced OIRR XTALK CNO(off) CNC(off) RL = 50, CL = 5 pF, f = 1 MHz VIN = 0 or V+, f = 1 MHz CON Power Supply Power Supply Range V+ Power Supply Current I+ VIN = 0 or V+ 11 6 1 35 39 31 33 ns 5 1.8 0.01 pC dB pF 5.5 V 1 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74454 S12-1989–Rev. D, 20-Aug-12 For more information please contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2511, DG2512, DG2513 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100000 3.0 V+ = 1.8 V 2.0 V+ = 2.7 V V+ = 3.0 V V+ = 4.5 V V+ = 3.6 V V+ = 5.0 V V+ = 5.5 V 1.5 V+ = 5.5 V VIN = 0 V 10000 V+ = 2.0 V I+ - Supply Current (pA) R ON - On-Resistance () 2.5 1.0 1000 100 10 0.5 T = 25 °C IS = 100 mA 0.0 0 1 2 3 4 1 - 60 5 0 20 40 60 80 Temperature (°C) Supply Current vs. Temperature 100 10 mA V+ = 3.0 V, IS = 100 mA + 85 °C + 25 °C - 40 °C 1 mA I+ - Supply Current (A) 2.5 R ON - On-Resistance () - 20 RON vs. VCOM and Supply Voltage 3.0 2.0 1.5 1.0 0.5 100 µA 10 µA V+ = 5.5 V 1 µA 100 nA 10 nA 1 nA 0.0 0 0.5 1 1.5 2 2.5 3 10 100 1K 10K 100K 1M 10M VCOM - Analog Voltage (V) Input Switching Frequency (Hz) RON vs. Analog Voltage and Temperature Supply Current vs. Input Switching Frequency 3.0 10000 V+ = 5.5 V V+ = 5.0 V, IS = 100 mA 2.5 + 85 °C 1000 + 25 °C 2.0 Leakage Current (pA) R ON - On-Resistance () - 40 VCOM - Analog Voltage (V) - 40 °C 1.5 1.0 100 ICOM(off) ICOM(on) INC/NO(on) 10 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCOM - Analog Voltage (V) RON vs. Analog Voltage and Temperature www.vishay.com 4 5.0 1 - 60 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Leakage Current vs. Temperature For more information please contact: [email protected] Document Number: 74454 S12-1989–Rev. D, 20-Aug-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2511, DG2512, DG2513 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 500 2.0 400 Leakage Current (pA) 200 ICOM(off) I NO(off) /I NC(off) 100 VT - Switching Threshold (V) V+ = 5.5 V 300 0 - 100 I COM(on) - 200 - 300 1.5 1.0 0.5 - 400 - 500 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 1 2 VCOM - Analog Voltage (V) Leakage vs. Analog Voltage 4 5 6 Switching Threshold vs. Supply Voltage 25 20 10 20 tON V+ = 2.7 V Q - Charge Injection (pC) tON, tOFF, - Switchint Time (ns) 3 V+ - Supply Voltage (V) tON V+ = 4.5 V 15 10 tOFF V+ = 2.7 V V+ = 2.0 V V+ = 3.0 V 0 - 10 V+ = 5.0 V - 20 - 30 - 40 5 - 50 tOFF V+ = 4.5 V 0 - 60 - 40 - 20 0 20 40 60 80 100 Temperature (°C) - 60 0.0 1.0 2.0 3.0 4.0 5.0 VNO/NC - Analog Voltage (V) Switching Time vs. Temperature and Supply Voltage Charge Injection vs. Analog Voltage 10 LOSS 0 LOSS, OIRR, XTLAK (dB) - 10 - 20 OIRR - 30 - 40 - 50 - 60 X TALK V+ = 3.0 V RL = 50 Ω - 70 - 80 100 K 1M 10 M 100 M 1G Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Document Number: 74454 S12-1989–Rev. D, 20-Aug-12 For more information please contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2511, DG2512, DG2513 Vishay Siliconix TEST CIRCUITS V+ +3V Logic Input 50 % V+ 0V Switch Output COM NO or NC Switch Input tr < 5 ns tf < 5 ns VOUT 0.9 x V OUT Switch Output IN Logic Input RL 50 Ω GND CL 35 pF 0V tON tOFF 0V Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT = VCOM RL R L + R ON Figure 1. Switching Time V+ Logic Input V+ VNO VNC tr < 5 ns tf < 5 ns 0V COM NO 3V VO NC RL 50 Ω IN CL 35 pF GND VNC = V NO VO Switch Output 90 % 0V tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen ΔVOUT V+ VOUT NC or NO COM VOUT + IN IN Vgen CL 3V On Off On GND Q = ΔVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection www.vishay.com 6 For more information please contact: [email protected] Document Number: 74454 S12-1989–Rev. D, 20-Aug-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2511, DG2512, DG2513 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ COM IN COM 0 V, 2.4 V NC or NO VNC/ NO Off Isolation = 20 log RL GND VCOM Analyzer Figure 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V Impedance Analyzer NC or NO GND f = 1 MHz Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74454. Document Number: 74454 S12-1989–Rev. D, 20-Aug-12 For more information please contact: [email protected] www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix MINI QFN-6L CASE OUTLINE DIM MILLIMETERS INCHES MIN. NAM. MAX. MIN. NAM. MAX. A 0.50 0.55 0.60 0.0197 0.0217 0.0236 A1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.15 REF 0.006 REF D 1.15 1.20 1.25 0.045 0.047 0.049 E 0.95 1.00 1.05 0.037 0.039 0.041 e 0.40 BSC 0.016 BSC L 0.30 0.35 0.40 0.012 0.014 0.016 L1 0.40 0.45 0.50 0.016 0.018 0.020 ECN T-07039-Rev. A, 12-Feb-07 DWG: 5958 Document Number: 74497 12-Feb-07 www.vishay.com 1 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 6L 6 x 0.42 0.40 Pitch 6 x 0.22 1.07 Mounting Footprint Dimensions in mm Document Number: 66556 Revision: 05-Mar-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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