DG2011 New Product Vishay Siliconix Low-Voltage, Low rON, Single SPDT Analog Switch In SC-89 Package FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D Low Voltage Operation (1.8 V to 5.5 V) Low On-Resistance - rON: 1.8 W @ 2.7 V Low Charge Injection Low Voltage Logic Compatible SC-89 Package (1.6 x 1.6 mm) Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space Guaranteed 2-V Operation Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold Circuits ADC and DAC Applications Low Voltage Data Acquisition Systems DESCRIPTION The DG2011 is a low on-resistance, single-pole/double-throw monolithic CMOS analog switch. It is designed for low voltage applications with guaranteed operation at 2 V. The DG2011 is ideal for portable and battery powered equipment, requiring high performance and efficient use of board space. In additional to the low on-resistance (1.8 Ω @ 2.7 V), charge injection is less than 10 pC over the entire analog range. The switch conducts equally well in both directions when on, and blocks up to the power supply level when off. The DG2011 is built on Vishay Siliconix’s low voltage JI2 process. An epitaxial layer prevents latchup. Break-before-make is guaranteed. The DG2011 represents a breakthrough in packaging development for analog switching products. The SC-89 package (1.6 x 1.6 mm2) – also know as SOT-666 in the industry – reduces board spacing by approximately 40% while obtaining performance comparable to SC-70 analog switch devices available today. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION SC-89 IN 1 6 NO (Source1) V+ 2 5 COM GND 3 4 NC (Source2) Top View TRUTH TABLE Logic NC NO 0 ON OFF 1 OFF ON ORDERING INFORMATION Ax Temp Range Package Part Number -40 to 85°C SC-89 (SOT-666) DG2011DX Pin 1 Device Marking: Ax x = Date/Lot Traceability Code Document Number: 70102 S-22315—Rev. B, 16-Dec-02 www.vishay.com 1 DG2011 New Product Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (NO, NC, COM pins) . . . . . . . . . . . . . . . . . . . "150 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "300 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C Power Dissipation (Packages)b SC-89c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 2.15 mW/_C above 70_C SPECIFICATIONS (V+ = 2.0 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 2.0 V, VIN = 0.4 or 1.6 Ve Limits -40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V 5.5 5.5 W Analog Switch Analog Signal Ranged On-Resistance Switch Off Leakage Currentf VNO, VNC, VCOM rON INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) V+ = 2.0 V, VCOM = 0.2 V/0.9 V INO, INC = 20 mA V+ = 2.2 V VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V Room Full 3.5 Room Full -1 -10 1 10 Room Full -1 -10 1 10 Room Full -1 -10 1 10 1.5 nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Full Cin IINL or IINH 0.4 VIN = 0 or V+ Full 4 1 V pF 1 mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time tBBM Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel-On Capacitanced CNO(off), CNC(off) VNO or VNC = 1.5 V, RL = 300 W, CL = 35 pF Room Full 75 110 113 Room Full 37 71 76 Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W W, CL = 5 pF, f = 1 MHz 1 37 Room 7 Room -62 Room -69 Room 29 Room 85 pC dB VIN = 0 or V+, f = 1 MHz CON ns pF Power Supply Power Supply Range V+ Power Supply Current I+ www.vishay.com 2 1.8 VIN = 0 or V+ 0.01 5.5 V 1.0 mA Document Number: 70102 S-22315—Rev. B, 16-Dec-02 DG2011 New Product Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified Parameter Limits -40 to 85_C Tempa Minb VNO, VNC, VCOM Full 0 rON Room Full Symbol V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance DrON rON Match rON Flatness rON Flatness Switch Off Leakage V+ = 2.7 V, VCOM = 0.9 V/1.5 V INO, INC = 50 mA Current f INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) 1.8 Room 0.2 Room V+ = 3.3 V, VNO, VNC = 1 V/3 V VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V 2.7 2.9 0.2 W 0.5 Room Full -1 -10 1 10 Room Full -1 -10 1 10 Room Full -1 -10 1 10 1.6 nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Cin Full Input Current IINL or IINH VIN = 0 or V+ Full 0.4 4 1 V pF 1 mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time tBBM Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel-On Capacitanced CNO(off), CNC(off) VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF Room Full 45 75 77 Room Full 29 59 62 Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W W, CL = 5 pF, f = 1 MHz 1 16 Room 2 Room -62 Room -68 Room 28 Room 84 pC dB VIN = 0 or V+, f = 1 MHz CON ns pF Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC Document Number: 70102 S-22315—Rev. B, 16-Dec-02 1.8 0.01 VIN = 0 or V+ 5.5 V 1.0 mA 3.3 mW www.vishay.com 3 DG2011 New Product Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve Limits -40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance VNO, VNC, VCOM rON DrON rON Match Switch Off Leakage Current INO(off), INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 4.5 V, VCOM = 2.5 V INO, INC = 100 mA V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V V+ = 5.5 V, VNO, VNC = VCOM = 1 V/4.5 V Room Full 1.3 Room 2.0 2.1 W 0.15 Room Full -1 -10 1 10 Room Full -1 -10 1 10 Room Full -1 -10 1 10 2 nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Cin Full Input Current IINL or IINH VIN = 0 or V+ Full 0.8 4 1 V pF 1 mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time tBBM Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK Source-Off Capacitanced Channel-On Capacitanced CNO(off), CNC(off) VNO or VNC = 3 V, RL = 300 W, CL = 35 pF Room Full 45 75 76 Room Full 20 47 48 Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W W, CL = 5 pF, f = 1 MHz 1 19 Room 9 Room -62 Room -68 Room 27 Room 82 pC dB VIN = 0 or V+, f = 1 MHz CON ns pF Power Supply Power Supply Range V+ Power Supply Current I+ 1.8 VIN = 0 or V+ 0.01 5.5 V 1.0 mA Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. www.vishay.com 4 Document Number: 70102 S-22315—Rev. B, 16-Dec-02 DG2011 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Supply Voltage rON vs. Analog Voltage and Temperature 6 6 A: 85_C B: 25_C C: -40_C T = 25_C 5 rON - On-Resistance ( Ω ) rON - On-Resistance ( Ω ) 5 4 V+ = 2.0 V IS = 20 mA 3 2 V+ = 3.0 V IS = 50 mA V+ = 5.0 V IS = 100 mA 1 V+ = 2.0 V IS = 20 mA 4 A B 3 C B 2 V+ = 5.0 V IS = 100 mA A B C C 1 0 0 0 1 2 3 4 5 6 0 1 2 VCOM - Analog Voltage (V) 3 4 5 6 VCOM - Analog Voltage (V) Supply Current vs. Temperature Supply Current vs. Input Switching Frequency 10000 10 mA V+ = 5.0 V VIN = 0 V V+ = 5.0 V 1 mA 1000 I+ - Supply Current (A) I+ - Supply Current (pA) V+ = 3.0 V IS = 50 mA 100 10 100 mA 10 mA 1 mA 100 nA 10 nA 1 nA 1 100 pA -60 -40 -20 0 20 40 60 80 100 100 1k Temperature (_C) 10 k 100 k 1M 10 M 100 M Input Switching Frequency (Hz) Leakage Current vs. Temperature Leakage vs. Analog Voltage 250 10000 V+ = 5.0 V 200 V+ = 5.0 V 150 ION(off)/INC(off) 100 Leakage Current (pA) Leakage Current (pA) 1000 ICOM(on) ICOM(off) 100 ICOM(off) 50 ICOM(on) 0 -50 ION(off)/INC(off) -100 10 -150 -200 -250 1 -60 -40 -20 0 20 40 Temperature (_C) Document Number: 70102 S-22315—Rev. B, 16-Dec-02 60 80 100 0 1 2 3 4 5 VCOM, VNO, VNC, - Analog Voltage (V) www.vishay.com 5 DG2011 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Switching Time vs. Temperature and Supply Voltage 10 90 0 tON V+ = 2 V LOSS -10 70 60 tON V+ = 3 V 50 40 tOFF V+ = 2 V tON V+ = 5 V 30 tOFF V+ = 5 V tOFF V+ = 3 V 20 LOSS, OIRR, XTLAK (dB) tON, tOFF, - Switchint Time (ns) 80 10 -20 -30 -40 XTALK -50 OIRR -60 -70 V+ = 5.0 V RL = 50 W -80 -90 0 -60 -40 -20 0 20 40 60 80 100 100 K 1M 10 M 2.5 20 ÍÍÍÍÍÍÍÍ ÍÍÍÍÍÍÍÍ ÍÍÍÍÍÍÍÍ ÍÍÍÍÍÍÍÍ 1.5 1.0 0.5 V+ = 2 V V+ = 5 V 10 0 V+ = 3 V -10 -20 0.0 -30 0 1 2 3 4 5 V+ - Supply Voltage (V) www.vishay.com 6 1G Charge Injection vs. Analog Voltage 30 Q - Charge Injection (pC) VT - Switchint Threshold (V) Switching Threshold vs. Supply Voltage 3.0 2.0 100 M Frequency (Hz) Temperature (_C) 6 7 0 1 2 3 4 5 6 VCOM - Analog Voltage (V) Document Number: 70102 S-22315—Rev. B, 16-Dec-02 DG2011 New Product Vishay Siliconix TEST CIRCUITS V+ +3V Logic Input 50% V+ NO or NC Switch Input tr t 5 ns tf t 5 ns 0V Switch Output COM VOUT 0.9 x VOUT Switch Output IN Logic Input RL 300 W GND CL 35 pF 0V tON tOFF 0V Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT + VCOM ǒ RL Ǔ R L ) R ON FIGURE 1. Switching Time V+ Logic Input V+ tr <5 ns tf <5 ns 0V COM NO VNO 3V VO NC VNC RL 300 W IN CL 35 pF GND VNC = VNO VO Switch Output 90% 0V tD tD CL (includes fixture and stray capacitance) FIGURE 2. Break-Before-Make Interval V+ Rgen DVOUT V+ NC or NO COM VOUT VOUT + IN IN Vgen CL 3V On Off On GND Q = DVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. FIGURE 3. Charge Injection Document Number: 70102 S-22315—Rev. B, 16-Dec-02 www.vishay.com 7 DG2011 New Product Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ COM 0V, 2.4 V IN COM NC or NO Off Isolation + 20 log RL GND VNCńNO VCOM Analyzer FIGURE 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz FIGURE 5. Channel Off/On Capacitance www.vishay.com 8 Document Number: 70102 S-22315—Rev. B, 16-Dec-02