VISHAY DG442LDY

DG441L/442L
Vishay Siliconix
Precision Monolithic Quad SPST
Low-Voltage CMOS Analog Switches
FEATURES
BENEFITS
APPLICATIONS
D 2.7- thru 12-V Single Supply or
"3- thru "6-Dual Supply
D On-Resistance—r DS(on): 17 D Fast Switching—tON: 20 ns
—tOFF: 12 ns
D TTL, CMOS Compatible
D Low Leakage: 0.25 nA
D 2000-V ESD Protection
D
D
D
D
D
D
D
D
D
D
D
Widest Dynamic Range
Low Signal Errors and Distortion
Break-Before-Make Switching Action
Simple Interfacing
Precision Automatic Test Equipment
Precision Data Acquisition
Communication Systems
Battery Powered Systems
Computer Peripherals
SDSL, DSLAM
Audio and Video Signal Routing
DESCRIPTION
The DG441L/442L are low voltage pin-for-pin compatible
companion devices to the industry standard DG441L/442L
with improved performance
Using BiCMOS wafer fabrication technology allows the
DG441L/442L to operate on single and dual supplies. Single
supply voltage ranges from 3 to 12 V while dual supply
operation is recommended with "3 to "6 V.
Combining high speed (tON: 20 ns), flat rDS(on) over the analog
signal range (5 ), minimal insertion lose (- 3 dB at 280 MHz),
and excellent crosstalk and off-isolation performance ( - 50 dB
at 50 MHz), the DG441L/442L are ideally suited for audio and
video signal switching.
The DG441L/442L responds to opposite control logic as
shown in the Truth Table. open and two normally closed
switches.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Dual-In-Line, TSSOP and SOIC
IN1
1
TRUTH TABLE
16
IN2
D1
2
15
D2
S1
3
14
S2
V-
4
13
V+
GND
5
12
NC
DG441L/442L
Logic
6
DG442L
0
ON
OFF
1
OFF
ON
Logic “0” v 0.8 V
Logic “1” w 2.4 V
ORDERING INFORMATION
Temp Range
Package
16 Pin TSSOP
16-Pin
11
S3
-40
40 to 85_C
7
10
D3
IN4
8
9
IN3
DG442LDY
DG441LAK, DG441LAK/883
16 Pin CerDIP
16-Pin
-55
55 to 125_C
DG442LAK, DG442LAK/883
DG441LAZ/883
LCC 20
LCC-20
Document Number: 71399
S-03294—Rev. D, 17-Mar-03
DG442LDQ
DG441LDY
16 Pin Narrow SOIC
16-Pin
D4
Part Number
DG441LDQ
Top View
S4
DG441L
DG442LAZ/883
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1
DG441L/442L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 13 V
GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3 to (V+ + 0.3 V)
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature:
(DQ, DY Suffix) . . . . . . . . . . . . . . . . . . -65 to 125_C
(AK Suffix) . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C
Power Dissipation (Package)b
16-Pin TSSOPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
16-Pin Narrow Body SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW
16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 7 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
SPECIFICATIONSa (SINGLE SUPPLY 12 V)
Test Conditions
Unless Specified
Parameter
A Suffix Limits
D Suffix Limits
-55 to 125_C
-40 to 85_C
V+ = 12 V, V - = 0 V
VIN = 2.4 V, 0.8 Vf
Tempb
rDS(on)
V+ = 10.8 V, V - = 0 V
IS = 10 mA, VD = 2/9 V
Room
Full
20
30
45
30
40
rDS(on)
IS = 10 mA, VD = 9 V
Room
0.1
0.5
0.5
Symbol
Typc
Mind
Maxd
Mind
Maxd
Unit
0
12
0
12
V
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
On-Resistance
Match Between Channelse
Switch Off
Leakage Current
Channel On
Leakage Current
Full
IS(off)
VD = 1/11 V
V, VS = 11/1 V
ID(off)
Room
Full
-1
-15
1
15
-1
-10
1
10
Room
Full
-1
-15
1
15
-1
-10
1
10
-1
-15
1
15
-1
-10
1
10
-1.5
1.5
-1
1
-1.5
1.5
-1
1
ID(on)
VS = VD = 11/1 V
Room
Full
Input Current, VIN Low
IIL
VIN Under Test = 0.8 V
Full
Input Current, VIN High
IIH
VIN Under Test = 2.4 V
Full
nA
Digital Control
0.01
A
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injectione
Q
Off Isolatione
OIRR
Channel-to-Channel
Crosstalke
XTALK
Source Off Capacitancee
CS(off)
Drain Off Capacitancee
CD(off)
Channel On Capacitancee
CD(on)
RL = 300 , CL = 35 pF
VS = 5 V See Figure 2
Vg = 0 V, Rg = 0 , CL = 10 nF
RL = 50 , CL = 5 pF,
pF
f = 1 MHz
f = 1 MHz
Room
Full
20
60
80
60
70
Room
Full
12
35
50
35
45
Room
5
Room
71
Room
95
Room
5
Room
6
Room
15
ns
pC
dB
pF
p
Power Supplies
Positive Supply Current
Negative Supply Current
Ground Current
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2
I+
Full
0.03
I-
Room
Full
-0.002
-1
-7.5
-1
-5
Full
-0.002
-1.5
-1
IGND
VIN = 0 or 12 V
1.5
1
A
Document Number: 71399
S-03294—Rev. D, 17-Mar-03
DG441L/442L
Vishay Siliconix
SPECIFICATIONSa (DUAL SUPPLY "5 V)
Test Conditions
Unless Specified
Parameter
A Suffix Limits
D Suffix Limits
-55 to 125_C
-40 to 85_C
V+ = 5 V, V - = -5 V
VIN = 2.4 V, 0.8 Vf
Tempb
rDS(on)
V+ = 5 V, V - = -5 V
IS = 10 mA, VD = "3.5 V
Room
Full
20
33
45
33
40
rDS(on)
IS = 10 mA, VD = "3.5 V
Room
0.1
0.5
0.5
Symbol
Typc
Mind
Maxd
Mind
5
-5
Maxd
Unit
5
V
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
On-Resistance
Match BetweenChannelse
Full
-5
Room
Full
-1
-15
1
15
-1
-10
1
10
Room
Full
-1
-15
1
15
-1
-10
1
10
ID(on)
V+ = 5.5 V, V - = -5.5 V
VS = VD = "4.5 V
Room
Full
-1
-15
1
15
-1
-10
1
10
Input Current, VIN Lowe
IIL
VIN Under Test = 0.8 V
Full
0.05
-1.5
1.5
-1
1
Input Current, VIN Highe
IIH
VIN Under Test = 2.4 V
Full
0.05
-1.5
1.5
-1
1
Room
Full
21
60
83
60
70
Room
Full
16
35
55
35
45
IS(off)
Switch Off
Leakage Currentg
ID(off)
Channel On
Leakage Currentg
V+ = 5.5 V, V - = -5.5 V
VD = "4.5 V, VS = #4.5 V
nA
Digital Control
A
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injectione
Q
Off Isolatione
OIRR
Channel-to-Channel
Crosstalke
XTALK
Source Off Capacitancee
CS(off)
Drain Off Capacitancee
CD(off)
Channel On Capacitancee
CD(on)
RL = 300 , CL = 35 pF
VS = "3.5 V See Figure 2
Vg = 0 V, Rg = 0 , CL = 10 nF
RL = 50 , CL = 5 pF,
pF
f = 1 MHz
f = 1 MHz
Room
5
Room
68
Room
85
Room
9
Room
9
Room
20
ns
pC
dB
pF
p
Power Supplies
Positive Supply Currente
I+
Full
0.002
Negative Supply Currente
I-
Room
Full
-0.002
-1
-7.5
-1
-5
Currente
IGND
Full
-0.002
-1.5
-1
Ground
VIN = 0 or 5 V
1.5
1
A
SPECIFICATIONSa (SINGLE SUPPLY 5 V)
Test Conditions
Unless Specified
Parameter
A Suffix Limits
D Suffix Limits
-55 to 125_C
-40 to 85_C
V+ = 5 V, V - = 0 V
VIN = 2.4 V, 0.8 Vf
Tempb
rDS(on)
V+ = 4.5 V, IS = 5 mA
VD = 1 V, 3.5 V
Room
Full
35
50
88
50
75
rDS(on)
IS = 5 mA, VD = 3.5 V
Room
0.5
1.0
1.0
Room
Hot
27
50
90
50
60
Room
Hot
15
30
55
30
40
Symbol
Typc
Mind
Maxd
Mind
5
0
Maxd
Unit
5
V
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistancee
On-Resistance
Match Between Channelse
VANALOG
Full
0
Dynamic Characteristics
Turn-On Timee
tON
Turn-Off Timee
tOFF
Document Number: 71399
S-03294—Rev. D, 17-Mar-03
RL = 300 , CL = 35 pF
VS = 3.5 V, See Figure 2
ns
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DG441L/442L
Vishay Siliconix
SPECIFICATIONSa (SINGLE SUPPLY 5 V)
Test Conditions
Unless Specified
Parameter
A Suffix Limits
D Suffix Limits
-55 to 125_C
-40 to 85_C
V+ = 5 V, V - = 0 V
VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
0.5
I+
Full
10
I-
VIN = 0 or 5 V
Room
Full
-0.002
-1
-7.5
-1
-5
Full
-10
-200
-100
Symbol
Mind
Maxd
Mind
Maxd
Unit
Dynamic Characteristics
Charge Injectione
Q
pC
Power Supplies
Positive Supply Currente
Negative Supply
Currente
Ground Currente
IGND
200
100
A
SPECIFICATIONSa (SINGLE SUPPLY 3 V)
Test Conditions
Unless Specified
Parameter
A Suffix Limits
D Suffix Limits
-55 to 125_C
-40 to 85_C
V+ = 3 V, V - = 0 V
VIN = 0.4 Vf
Tempb
rDS(on)
V+ = 2.7 V, V - = 0 V
IS = 5 mA, VD = 0.5, 2.2 V
Room
Full
65
80
115
80
100
rDS(on)
IS = 5 mA, VD = 2.2 V
Room
1.0
3.0
3.0
Symbol
Typc
Mind
Maxd
Mind
3
0
Maxd
Unit
3
V
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
On-Resistance
Match Between Channelse
Full
0
Room
Full
-1
-15
1
15
-1
-10
1
10
Room
Full
-1
-15
1
15
-1
-10
1
10
ID(on)
V+ = 3.3 V, V - = 0 V
VS = VD = 1, 2 V
Room
Full
-1
-15
1
15
-1
-10
1
10
Input Current, VIN Lowe
IIL
VIN Under Test = 0.4 V
Full
0.005
-1.5
1.5
-1
1
Input Current, VIN Highe
IIH
VIN Under Test = 2.4 V
Full
0.005
-1.5
1.5
-1
1
Room
Full
50
136
175
136
151
Room
Full
30
100
140
100
125
Switch Off
Leakage Currentg
Channel On
Leakage Currentg
IS(off)
ID(off)
V+ = 3.3 V, V - = 0 V
VD = 1, 2 V, VS = 2, 1 V
nA
Digital Control
A
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injectione
Q
Off Isolatione
OIRR
Channel-to-Channel
Crosstalke
XTALK
Source Off Capacitancee
CS(off)
Drain Off
Capacitancee
Channel On Capacitancee
CD(off)
CD(on)
RL = 300 , CL = 35 pF
VS = 1.5 V See Figure 2
Vg = 0 V, Rg = 0 , CL = 10 nF
RL = 50 , CL = 5 pF,
pF
f = 1 MHz
f = 1 MHz
Room
1
Room
68
Room
85
Room
6
Room
6
Room
20
ns
pC
dB
pF
p
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
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Document Number: 71399
S-03294—Rev. D, 17-Mar-03
DG441L/442L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. Drain Voltage
(Single Supply)
rDS(on) vs. Drain Voltage and Temperature
(Single Supply)
50
100
r DS(on) - On-Resistance ( )
r DS(on) - On-Resistance ( )
V+ = 5 V
V- = 0 V
80
VCC = 2.7 V
60
40
VCC = 4.5 V
VCC = 12 V
20
A
40
B
30
C
D
20
A=125_C
B= 85_C
C= 25_C
D= -40_C
E= -55_C
10
0
0
0
3
6
9
0
12
2
3
4
5
Drain Voltage (V)
rDS(on) vs. Drain Voltage and Temperature
(Dual Supply)
Leakage Current vs. Analog Voltage
(Dual Supply)
30
28
A
B
21
C
D
E
14
A=125_C
B= 85_C
C= 25_C
D= -40_C
E= -55_C
7
I S , I D Leakage Current (pA)
V" = "5 V
r DS(on) - On-Resistance ( )
1
Drain Voltage (V)
35
V+ = 5 V
V - = -5 V
20
10
ID(on)
0
ID(off)
IS(off)
-10
-20
0
-30
-5
-3
-1
1
3
5
-5
-3
Drain Voltage (V)
-1
1
3
5
VD or VS - Drain-Source Voltage
Switching Time vs. Single Supply
Switching Time vs. Dual Supply
45
50
36
40
tON
Switching Speed (nS)
Switching Speed (nS)
E
30
20
tOFF
tON
tOFF
27
18
9
10
0
0
3
6
9
V" Positive Supply Voltage (V)
Document Number: 71399
S-03294—Rev. D, 17-Mar-03
12
15
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
V" Positive Supply Voltage (V)
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5
DG441L/442L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Charge Injection vs. Drain Voltage
6
Charge Injection (Q)
4
VSUPPLY = "5 V
2
VSUPPLY = 3 V
0
-2
-5
-3
-1
1
3
5
Drain Voltage (V)
Drain Capacitance vs. Drain Voltage
(Single Supply)
Input Threshold vs. Single Supply Voltage
7
1.8
6
Capacitance (pF)
V TH - Threshold (V)
1.5
1.2
0.9
0.6
CD(off) @ VCC = 5 V
CD(off) @ VCC = 12 V
5
CD(off) @ VCC = 3 V
4
3
2
0.3
1
0.0
0
0
2
4
6
8
10
12
14
0
3
V" Positive Supply Voltage (V)
9
12
VD - Drain Voltage (V)
Capacitance vs. Analog Signal
(Dual Supply)
Insertion Loss, Off Isolation and Crosstalk
vs. Frequency (Single Supply)
25
10
VSUPPLY = "5 V
CD(on)
-10
20
Loss (dB)
-30
Capacitance (pF)
6
15
-50
V+ = 3 V
V- = 0 V
RL = 50 Insertion Loss
-3 dB = 280 MHz
Off Isolation
10
-70
Crosstalk
CS/CD(off)
5
-90
0
-110
-5
-3
-1
1
Analog Voltage (V)
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6
3
5
0.1
1
10
100
1000
Frequency (MHz)
Document Number: 71399
S-03294—Rev. D, 17-Mar-03
DG441L/442L
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
5-V Reg
S
V-
Level
Shift/
Drive
INX
V+
GND
D
V-
FIGURE 1.
TEST CIRCUITS
V+
3V
Logic
Input
50%
V+
VS
S
VO
RL
1 k
3V
GND
tr <20 ns
tf <20 ns
0V
D
IN
50%
CL
35 pF
tOFF
Switch
Input
VS
Switch
Output
0V
VO
80%
80%
V-
VCL (includes fixture and stray capacitance)
tON
Note:
Logic input waveform is inverted for DG442.
FIGURE 2. Switching Time
V+
V
O
Rg
VO
V+
S
D
IN
INX
OFF
ON
OFF
(DG441)
CL
1 nF
3V
GND
VO
VINX
OFF
ON
Q = VO x CL
OFF
(DG442)
V-
FIGURE 3. Charge Injection
Document Number: 71399
S-03294—Rev. D, 17-Mar-03
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7
DG441L/442L
Vishay Siliconix
TEST CIRCUITS
V+
C
C = 1 F tantalum in parallel with 0.01 F ceramic
V+
C
V+
S1
VS
D1
V+
Rg = 50 IN1
50 S2
VO
0V, 2.4 V
D2
V-
RL
IN
0V, 2.4 V
GND
RL
IN2
GND
VO
D
Rg = 50 0V, 2.4 V
NC
S
VS
V-
C
C
V-
VXTALK Isolation = 20 log
C = RF bypass
Off Isolation = 20 log
VS
VS
VO
VO
FIGURE 5. Off Isolation
FIGURE 4. Crosstalk
V+
C
S
V+
Meter
IN
HP4192A
Impedance
Analyzer
or Equivalent
0 V, 2.4 V
D
GND
V-
C
V-
FIGURE 6. Source/Drain Capacitances
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Document Number: 71399
S-03294—Rev. D, 17-Mar-03
DG441L/442L
Vishay Siliconix
APPLICATIONS
+24 V
+12 V
RL
DG442L
V+
I = 3A
150 +12 V
VN0300L, M
IN
+12 V
VIN
1/4 DG442L
10 k
S
+
+12 V
D
-
VOUT
CH
+
-
GND
VIN
0 = Load Off
1 = Load On
0V
FIGURE 7. Power MOSFET Driver
VIN
H = Sample
L = Hold
FIGURE 8. Open Loop Sample-and-Hold
+
-
VOUT
+12 V
Gain error is determined only by the resistor
tolerance. Op amp offset and CMRR will limit accuracy of circuit.
V+
GAIN1
AV = 1
R1
90 k
GAIN2
AV = 10
R2
5 k
With SW4 Closed
VOUT
VIN
GAIN3
AV = 20
R3
4 k
GAIN4
AV = 100
R4
1 k
=
R1 + R2 + R3 + R4
= 100
R4
DG441L or DG442L
V-
GND
)V
FIGURE 9. Precision-Weighted Resistor Programmable-Gain Amplifier
Document Number: 71399
S-03294—Rev. D, 17-Mar-03
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9
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
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Document Number: 91000
Revision: 18-Jul-08
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