DG411LE, DG412LE, DG413LE www.vishay.com Vishay Siliconix 16 , Low Parasitic Capacitance and Leakage, +12 V / +5 V / +3 V / ± 5 V Quad SPST Switches DESCRIPTION FEATURES The DG411LE, DG412LE, and DG413LE are monolithic quad single-pole-single-throw analog switches. The DG411LE and DG412LE differ only in that they respond to opposite logic levels. The DG413LE has two normally open and two normally closed switches. It can be given various configurations, including four SPST, two SPDT, and one DPDT. • 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply Available • On-resistance RDS(on): 16 • Low parasitic capacitance: Available CD(ON): 15 pF CS(OFF): 5 pF • Less than 8 pC charge injection over the full signal swing range • Fast switching tON: 16 ns tOFF: 9 ns • TTL, CMOS compatible • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 The DG411LE, DG412LE, and DG413LE offer low on resistance of 16 , low parasitic capacitance of 15 pF switch on capacitance, and low charge injection over the signal swing range. The DG411LE, DG412LE, and DG413LE operate on single and dual supplies. Single supply voltage ranges from 3 V to 16 V while dual supply operation is recommended with ± 3 V to ± 8 V. Each switch conducts equally well in both direction when on, and blocks input voltages up to the supply levels when off. The DG411LE, DG412LE, and DG413LE are available in 16 lead TSSOP, SOIC, and PDIP packages. Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. BENEFITS • • • • Wide operation voltage range Low signal errors and distortion Fast switching time Minimized switching glitch APPLICATIONS • • • • • • • • • • Automatic test equipment Data acquisition systems Meters and instruments Medical and healthcare systems Communication systems Audio and video signal routing Relay replacement Battery powered systems Computer peripherals Audio and video signal routing FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG411LE, DG412LE Dual-In-Line, TSSOP and SOIC DG413LE Dual-In-Line, TSSOP and SOIC IN1 1 16 IN2 IN1 1 16 IN2 D1 2 15 D2 D1 2 15 D2 S1 3 14 S2 S1 3 14 S2 V- 4 13 V+ V- 4 13 V+ GND 5 12 VL GND 5 12 VL S4 6 11 S3 D4 7 IN4 10 8 9 D3 IN3 S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Top View Top View S16-0391-Rev. A, 07-Mar-16 Document Number: 78091 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411LE, DG412LE, DG413LE www.vishay.com Vishay Siliconix TRUTH TABLE TRUTH TABLE LOGIC DG411LE DG412LE LOGIC SW1, SW4 SW2, SW3 0 ON OFF 0 OFF ON 1 OFF ON 1 ON OFF Logic “0” 0.8 V Logic “1” 2.4 V Logic “0” 0.8 V Logic “1” 2.4 V ORDERING INFORMATION TEMP. RANGE CONFIGURATION PACKAGE PART NUMBER 16-pin TSSOP DG411LE 16-pin SOIC 16-pin PDIP 16-pin TSSOP -40 °C to +85 °C Lead-free DG412LE 16-pin SOIC 16-pin PDIP 16-pin TSSOP DG413LE 16-pin SOIC 16-pin PDIP MIN. ORDER / PACK. QUANTITY DG411LEDQ-GE3 Tube 360 units DG411LEDQ-T1-GE3 Tape and reel, 3000 units DG411LEDY-GE3 Tube 500 units DG411LEDY-T1-GE3 Tape and reel, 2500 units DG411LEDJ-GE3 Tube 500 units DG412LEDQ-GE3 Tube 360 units DG412LEDQ-T1-GE3 Tape and reel, 3000 units DG412LEDY-GE3 Tube 500 units DG412LEDY-T1-GE3 Tape and reel, 2500 units DG412LEDJ-GE3 Tube 500 units DG413LEDQ-GE3 Tube 360 units DG413LEDQ-T1-GE3 Tape and reel, 3000 units DG413LEDY-GE3 Tube 500 units DG413LEDY-T1-GE3 Tape and reel, 2500 units DG413LEDJ-GE3 Tube 500 units ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT V+ to VGND to V- 18 VL (GND -0.3) to (V+) +0.3 V -0.3 to (V+) +0.3 or 30 mA, whichever occurs first IN a, VS, VD Continuous Current (Any terminal) 30 Peak Current, S or D (Pulsed 1 ms, 10 % duty cycle) 100 Storage Temperature Power Dissipation (Packages) UNIT -0.3 to +18 b (DQ, DY suffix) -65 to +125 (AK suffix) -65 to +150 16-pin TSSOP c 450 16-pin SOIC d 16-pin CerDIP e 650 mA °C mW 900 ESD Human Body Model (HBM); per ANSI / ESDA / JEDEC® JS-001 2500 V Latch Up Current, per JESD78D 400 mA Notes a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 7 mW/°C above 75 °C. d. Derate 7.6 mW/°C above 75 °C e. Derate 12 mW/°C above 75 °C. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0391-Rev. A, 07-Mar-16 Document Number: 78091 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411LE, DG412LE, DG413LE www.vishay.com SPECIFICATIONS a PARAMETER Vishay Siliconix (Single Supply 12 V) SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 V f TEMP. b TYP. c A SUFFIX D SUFFIX LIMITS LIMITS -55 °C to +125 °C -40 °C to +85 °C UNIT MIN. d MAX. d MIN. d MAX. d Analog Switch Analog Signal Range e Drain-Source On-Resistance VANALOG RDS(on) V+ = 10.8 V, V- = 0 V IS = 10 mA, VD = 2/9 V IS(off) VD = 1/11 V, VS = 11/1 V Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) VS = VD = 11/1 V Full - 0 12 0 12 V Room 16 - 26 - 26 Full - - 40 - 35 Room - -1 1 -1 1 10 Full - -15 15 -10 Room - -1 1 -1 1 Full - -15 15 -10 10 Room - -1 1 -1 1 Full - -15 15 -10 10 0.01 -1.5 1.5 -1 1 -1.5 1.5 -1 1 nA Digital Control Input Current, VIN Low IIL VIN under test = 0.8 V Full Input Current, VIN High IIH VIN under test = 2.4 V Full μA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay Charge Injection e RL = 300 , CL = 35 pF, VS = 5 V, see figure 2 Room 16 - 50 - 50 Full - - 70 - 60 Room 9 - 30 - 30 Full - - 48 - 40 5 - - - - tD DG413L only, VS = 5 V, RL = 300 , CL = 35 pF Room Q Vg = 0 V, Rg = 0 , CL = 10 nF Room 6.6 - - - - Room 68.4 - - - - Room 114 - - - - Off-Isolation e OIRR Channel-to-Channel Crosstalk e XTALK Source Off Capacitance e CS(off) Drain Off Capacitance e CD(off) Channel-On Capacitance e CD(on) RL = 50 , CL = 5 pF, f = 1 MHz f = 1 MHz Room 5 - - - - Room 6 - - - - Room 15 - - - - Room 0.02 - 1 - 1 Full - - 7.5 - 5 Room -0.002 -1 - -1 - Full - -7.5 - -5 - Room 0.002 - 1 - 1 ns pC dB pF Power Supplies Positive Supply Current Negative Supply Current I+ IVIN = 0 V or 5 V Logic Supply Current Ground Current IL IGND Full - - 7.5 - 5 Room -0.002 -1 - -1 - Full - -7.5 - -5 - μA Notes a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. S16-0391-Rev. A, 07-Mar-16 Document Number: 78091 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411LE, DG412LE, DG413LE www.vishay.com SPECIFICATIONS a PARAMETER Vishay Siliconix (Dual Supply ± 5 V) SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 5 V, V- = -5 V VL = 5 V, VIN = 2.4 V, 0.8 V f TEMP. b TYP. c A SUFFIX D SUFFIX LIMITS LIMITS -55 °C to +125 °C -40 °C to +85 °C UNIT MIN. d MAX. d MIN. d MAX. d Analog Switch Analog Signal Range e Drain-Source On-Resistance Switch Off Leakage Current g VANALOG RDS(on) IS(off) ID(off) Channel On Leakage Current g V+ = 5 V, V- = -5 V, IS = 10 mA, VD = ± 3.5 V V+ = 5.5, V- = -5.5 V, VD = ± 4.5 V, VS = ± 4.5 V Full - -5 5 -5 5 V Room 18 - 30 - 30 Full - - 42 - 37 Room - -1 1 -1 1 Full - -15 15 -10 10 Room - -1 1 -1 1 Full - -15 15 -10 10 ID(on) V+ = 5.5 V, V- = -5.5 V, VS = VD = ± 4.5 V Room - -1 1 -1 1 Full - -15 15 -10 10 Input Current, VIN Low e IIL VIN under test = 0.8 V Full 0.05 -1.5 1.5 -1 1 Input Current, VIN High e IIH VIN under test = 2.4 V Full 0.05 -1.5 1.5 -1 1 Room 17 - 50 - 50 Full - - 70 - 60 Room 12 - 35 - 35 Full - - 50 - 40 nA Digital Control μA Dynamic Characteristics Turn-On Time e Turn-Off Time e Break-Before-Make Time Delay e Charge Injection e tON tOFF RL = 300, CL = 35 pF, VS = ± 3.5 V, see figure 2 tD DG413L only, VS = 3.5 V, RL = 300, CL = 35 pF Room 5 - - - - Q Vg = 0 V, Rg = 0 , CL = 10 nF Room 5.8 - - - - Room 68 - - - - Room 113 - - - - Room 5 - - - - Room 6 - - - - Room 14 - - - - Room 0.03 - 1 - 1 Full - - 7.5 - 5 Room -0.002 -1 - -1 - Full - -7.5 - -5 - Room 0.002 - 1 - 1 Off Isolation e OIRR Channel-to-Channel Crosstalk e XTALK Source Off Capacitance e CS(off) Drain Off Capacitance e CD(off) Channel On Capacitance e CD(on) RL = 50 , CL = 5 pF, f = 1 MHz f = 1 MHz ns pC dB pF Power Supplies Positive Supply Current e Negative Supply Current e I+ IVIN = 0 V or 5 V Logic Supply Current e Ground Current e IL IGND Full - - 7.5 - 5 Room -0.002 -1 - -1 - Full - -7.5 - -5 - μA Notes a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. S16-0391-Rev. A, 07-Mar-16 Document Number: 78091 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411LE, DG412LE, DG413LE www.vishay.com SPECIFICATIONS a PARAMETER Vishay Siliconix (Single Supply 5 V) SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 5 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 V f TEMP. b TYP. c A SUFFIX D SUFFIX LIMITS LIMITS -55 °C to +125 °C -40 °C to +85 °C MIN. d MAX. d MIN. d UNIT MAX. d Analog Switch Analog Signal Range e Drain-Source On-Resistance e VANALOG RDS(on) V+ = 4.5 V, IS = 5 mA, VD = 1 V, 3.5 V Full - - 5 - 5 V Room 36 - 50 - 50 Full - - 88 - 75 Room 27 - 50 - 50 Hot - - 90 - 60 Room 15 - 30 - 30 Hot - - 55 - 40 Dynamic Characteristics Turn-On Time e tON Turn-Off Time e tOFF Break-Before-Make Time Delay e Charge Injection e RL = 300 , CL = 35 pF, VS = 3.5 V, see figure 2 tD DG413L only, VS = 3.5 V, RL = 300 , CL = 35 pF Room 11 - - - - Q Vg = 0 V, Rg = 0 , CL = 10 nF Room 3.3 - - - - Room 0.02 - 1 - 1 Hot - - 7.5 - 5 Room -0.002 -1 - -1 - Hot - -7.5 - -5 - Room 0.002 - 1 - 1 5 ns pC Power Supplies Positive Supply Current e Negative Supply Current e I+ IVIN = 0 V or 5 V Logic Supply Current e Ground Current e IL IGND Hot - - 7.5 - Room -0.002 -1 - -1 - Hot - -7.5 - -5 - μA Notes a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. S16-0391-Rev. A, 07-Mar-16 Document Number: 78091 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411LE, DG412LE, DG413LE www.vishay.com SPECIFICATIONS a PARAMETER Vishay Siliconix (Single Supply 3 V) SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 3 V, V- = 0 V VL = 3 V, VIN = 0.4 V, 2.0 V f TEMP. b TYP. c A SUFFIX LIMITS D SUFFIX -55 °C to +125 LIMITS °C -40 °C to +85 °C UNIT MIN. d MAX. d MIN. d MAX. d Analog Switch Analog Signal Range e Drain-Source On-Resistance Switch Off Leakage Current g VANALOG RDS(on) IS(off) ID(off) Channel On Leakage Current g V+ = 2.7 V, V- = 0 V, IS = 5 mA, VD = 0.5, 2.2 V V+ = 3.3, V- = 0 V, VD = 1, 2 V, VS = 2, 1 V Full - 0 3 0 3 V Room 106 - 130 - 130 Full - - 150 - 140 Room - -1 1 -1 1 10 Full - -15 15 -10 Room - -1 1 -1 1 Full - -15 15 -10 10 Room - -1 1 -1 1 Full - -15 15 -10 10 ID(on) V+ = 3.3 V, V- = 0 V, VS = VD = 1, 2 V Input Current, VIN Low IIL VIN under test = 0.4 V Full 0.005 -1.5 1.5 -1 1 Input Current, VIN High IIH VIN under test = 2.4 V Full 0.005 -1.5 1.5 -1 1 Room 57 - 85 - 85 Full - - 150 - 110 Room 25 - 60 - 60 Full - - 100 - 85 Room 24 - - - - nA Digital Control μA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay Charge Injection e RL = 300 , CL = 35 pF, VS = 1.5 V, see figure 2 tD DG413L only, VS = 1.5 V, RL = 300 , CL = 35 pF Q Vg = 0 V, Rg = 0 , CL = 10 nF Off Isolation e OIRR Channel-to-Channel Crosstalk e XTALK Source Off Capacitance e CS(off) Drain Off Capacitance e CD(off) Channel On Capacitance e CD(on) RL = 50 , CL = 5 pF, f = 1 MHz f = 1 MHz Room 2 - - - - Room 68 - - - - Room 107 - - - - Room 6 - - - - Room 7 - - - - Room 15 - - - - ns pC dB pF Notes a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. S16-0391-Rev. A, 07-Mar-16 Document Number: 78091 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411LE, DG412LE, DG413LE www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 90 24 TA = 25 °C IS = 10 mA V+ = +3.0 V 80 70 20 60 50 V+ = +5.0 V 40 V+ = +12.0 V 30 V+ = +16.0 V RON - On-Resistance (Ω) RON - On-Resistance (Ω) TA = 25 °C IS = 10 mA 22 18 14 12 20 10 10 8 0 V± = ± 5.0 V 16 V± = ± 8.0 V 6 0 2 4 6 8 10 12 14 16 -8 -6 -4 VD - Analog Voltage (V) 2 4 6 8 RDS(on) vs. Drain Voltage and Temperature (Single Supply) 30 35 25 30 +125 °C +125 °C RON - On-Resistance (Ω) RON - On-Resistance (Ω) 0 VD - Analog Voltage (V) RDS(on) vs. Drain Voltage (Single Supply) +85 °C 20 15 10 +25 °C 5 -55 °C -40 °C V+ = +12 V IS = 10 mA 25 +85 °C 20 15 10 5 0 +25 °C V± = ± 5.0 V IS = 10 mA -55 °C -40 °C 0 0 1 2 3 4 5 6 7 8 9 10 11 12 -5 -4 -3 -2 VD - Analog Voltage (V) -1 0 1 2 3 4 5 VD - Analog Voltage (V) RDS(on) vs. Drain Voltage and Temperature Supply Current vs. Temperature 50 100 +125 °C 45 90 +85 °C 40 35 30 25 20 -40 °C +25 °C V+ = +5 V IS = 10 mA 15 V+ = +5.5 V V- = 0 V IN = 0 V 80 I+ - Supply Current (nA) RON - On-Resistance (Ω) -2 70 60 50 40 30 20 -55 °C 10 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VD - Analog Voltage (V) RDS(on) vs. Drain Voltage and Temperature S16-0391-Rev. A, 07-Mar-16 5.0 -40 -20 0 20 40 60 80 100 120 Temperature (°C) Switching Time vs. Single Supply Document Number: 78091 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411LE, DG412LE, DG413LE www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 10.0 V+ = +5 V 30 8.0 QINJ - Charge Injection (pC) ID(ON) 20 Leakage Current (pA) V+ = 12 V 9.0 10 0 -10 ID(OFF) IS(OFF) -20 -30 V± = ± 5 V 7.0 6.0 5.0 V+ = 5 V 4.0 3.0 2.0 1.0 -40 V+ = 3V 0 -5 -4 -3 -2 -1 0 1 2 3 4 5 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 VD - Analog Voltage (V) VD - Drain Voltage (V), VS = -VD Charge Injection vs. Drain Voltage Leakage Current vs. Drain Voltage 60 2.2 55 2.1 Single supply 2.0 45 VIH 1.9 VTH - Threshold (V) Switching Speed (ns) 50 VL = V+ (for V+ < 5 V) and 5 V (V+ ≥ 5 V) 40 35 30 25 tON 20 VIL 1.8 1.7 1.6 1.5 1.4 15 tOFF 10 1.3 5 1.2 0 1.1 2 4 6 8 10 12 14 2 16 4 6 V+ - Positive Supply Voltage (V) 10 12 14 16 Threshold vs. Single Supply Current Switching Time vs. Single Supply Voltage 30 20 25 Dual supply CD(ON), V+ = +5 V Capacitance (pF) 16 20 tON 15 tOFF Single supply CD(ON), V+ = +3 V 18 Switching Speed (ns) 8 V+ - Positive Supply Voltage (V) CD(ON), V+ = +12 V 14 12 CD(OFF), V+ = +3 V CD(OFF), V+ = +5 V CD(OFF), V+ = +12 V 10 8 10 6 4 5 CS(OFF), V+ = +3 V CS(OFF), V+ = +5 V 2 CS(OFF), V+ = +12 V 0 0 3 4 5 6 7 V+/- - Positive Supply Voltage (V) Switching Time vs. Dual Supply Voltage S16-0391-Rev. A, 07-Mar-16 8 0 1 2 3 4 5 6 7 8 9 10 11 12 Analog Voltage (V) Drain Capacitance vs. Drain Voltage (Single Supply) Document Number: 78091 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411LE, DG412LE, DG413LE www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 20 Dual supply 0 18 -10 CD(ON), V± = ± 5 V 14 12 10 CD(OFF), V± = ± 5 V 8 Insertion loss, -3 dB = 301 MHz -20 Loss, OIRR, XTALK (dB) Capacitance (pF) 16 6 -30 -40 V+ = +3 V V- = 0 V -50 OIRR -60 -70 XTALK -80 -90 4 -100 CS(OFF), V± = ± 5 V 2 -110 -120 100K 0 -5 -4 -3 -2 -1 0 1 2 3 4 5 Analog Voltage (V) 1M 10M 100M 1G Frequency (Hz) Drain Capacitance vs. Drain Voltage (Dual Supply) Insertion Loss, Off Isolation and Crosstalk vs. Frequency SCHEMATIC DIAGRAM (Typical Channel) V+ S VL VVIN Level Shift/ Drive V+ GND D V- Fig. 1 S16-0391-Rev. A, 07-Mar-16 Document Number: 78091 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411LE, DG412LE, DG413LE www.vishay.com Vishay Siliconix TEST CIRCUITS VL V+ tr < 20 ns tf < 20 ns 3V Logic Input 50% 0V VL VS V+ S tON D Switch Input* VO VS VO IN RL 300 Ω V- GND CL 35 pF 0V Switch Output tON 90 % VO - VS Switch Input* V- 90 % CL (includes fixture and stray capacitance) RL VO = V S Note: RL + rDS(on) Logic input waveform is inverted for switches that have the opposite logic sense control Fig. 2 - Switching Time VL V+ 3V Logic Input VS1 S1 D1 VO1 IN1 VS2 Switch Output IN2 RL1 300 Ω V- GND 90 % VO2 D2 S2 50 % 0V VS1 VO1 RL2 300 Ω CL1 35 pF CL2 35 pF 0V VS2 VO2 0V Switch Output 90 % tD tD VCL (includes fixture and stray capacitance) Fig. 3 - Break-Before-Make (DG413LE) VL ΔVO V+ VO Rg VL V+ S IN Vg OFF VO ON OFF CL 10 nF 3V GND INX D VINX V- OFF ON Q = ΔVO x CL OFF INX dependent on switch configuration Input polarity determined by sense of switch. Fig. 4 - Charge Injection S16-0391-Rev. A, 07-Mar-16 Document Number: 78091 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411LE, DG412LE, DG413LE www.vishay.com Vishay Siliconix TEST CIRCUITS VL V+ C C VL V+ D1 S1 VS Rg = 50 Ω 50 Ω IN1 0 V, 2.4 V S2 D2 VO NC 0 V, 2.4 V RL IN2 GND XTALK Isolation = 20 log V- C VS VO V- C = RF bypass Fig. 5 - Crosstalk VL V+ VL C V+ C C VL V+ S VS C VO D VL V+ S Rg = 50 Ω 0 V, 2.4 V RL 50 Ω IN Meter IN GND V- C HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D GND VOff Isolation = 20 log V- C VS VO V- C = RF Bypass Fig. 6 - Off-Isolation Fig. 7 - Source / Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?78091. S16-0391-Rev. A, 07-Mar-16 Document Number: 78091 11 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 0.38 B 0.22 0.28 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 23-Oct-06 www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR TSSOP-16 0.193 (4.90) 0.171 0.014 0.026 0.012 (0.35) (0.65) (0.30) (4.35) (7.15) 0.281 0.055 (1.40) Recommended Minimum Pads Dimensions in inches (mm) Revision: 02-Sep-11 1 Document Number: 63550 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000