Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D743
BZA900A-series
Quadruple ESD transient voltage
suppressor
Product data sheet
2001 Sep 03
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA900A-series
FEATURES
PINNING
• ESD rating >8 kV, according to IEC61000-4-2
PIN
DESCRIPTION
• SOT665 surface mount package
1
cathode 1
• Common anode configuration.
2
common anode
3
cathode 2
APPLICATIONS
4
cathode 3
• Computers and peripherals
5
cathode 4
• Audio and video equipment
• Communication systems
DESCRIPTION
handbook, halfpage 5
4
Monolithic transient voltage suppressor diode in a five lead
SOT665 package for 4-bit wide ESD transient
suppression.
1
3
2
4
5
MARKING
1
TYPE NUMBER
2
3
MGW315
MARKING CODE
BZA956A
Z1
BZA962A
Z2
BZA968A
Z3
Fig.1 Simplified outline (SOT665) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
IZ
working current
Tamb = 25 °C
−
note 1
mA
IF
continuous forward current
Tamb = 25 °C
−
200
mA
IFSM
non-repetitive peak forward current tp = 1 ms; square pulse
−
4
A
Ptot
total power dissipation
Tamb = 25 °C; note 2; see Fig.5
−
335
mW
PZSM
non repetitive peak reverse power
dissipation:
square pulse; tp = 1 ms; see Fig.3
BZA956A
−
16
W
BZA962A
−
15
W
BZA968A
−
14
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Notes
1. DC working current limited by Ptot(max).
2. Device mounted on standard printed-circuit board.
2001 Sep 03
2
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA900A-series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
all diodes loaded
370
K/W
Rth j-s
thermal resistance from junction to solder
point; note 1
one diode loaded
135
K/W
all diodes loaded
125
K/W
MAX.
UNIT
Note
1. Solder point of common anode (pin 2).
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
CONDITIONS
IF = 200 mA
1.3
V
BZA956A
VR = 3 V
1000
nA
BZA962A
VR = 4 V
500
nA
BZA968A
VR = 4.3 V
100
nA
Table 1 Per type; BZ956A to BZA968A
Tj = 25 °C unless otherwise specified.
TYPE
WORKING VOLTAGE
VZ (V)
at IZ = 1 mA
DIFFERENTIAL
TEMP.
DIODE CAP.
RESISTANCE
COEFF.
Cd (pF)
rdif (Ω)
SZ (mV/K) at at f = 1 MHz;
at IZ = 1 mA
IZ = 1 mA
VR = 0
MIN.
TYP.
MAX.
MAX.
TYP.
BZA956A
5.32
5.6
5.88
400
0.3
125
2.2
BZA962A
5.89
6.2
6.51
300
1.6
105
2.1
BZA968A
6.46
6.8
7.14
200
2.2
90
2.0
2001 Sep 03
3
MAX.
NON-REPETITIVE
PEAK REVERSE
CURRENT
IZSM (A) at tp = 1 ms;
Tamb = 25 ×°C
MAX.
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA900A-series
GRAPHICAL DATA
MGW318
10
MGW319
102
handbook, halfpage
handbook, halfpage
I ZSM
PZSM
(A)
(W)
BZA956A
BZA956A
BZA962A
1
10
BZA968A
BZA962A
BZA968A
10−1
10−2
10−1
1
t p (ms)
1
10−2
10
10−1
1
t p (ms)
10
PZSM = VZSM × IZSM.
VZSM is the non-repetitive peak reverse voltage at IZSM.
Fig.3
Fig.2
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Maximum non-repetitive peak reverse
current as a function of pulse time.
MGT586
MGW320
120
400
handbook, halfpage
handbook, halfpage
Ptot
(mW)
Cd
(pF)
300
80
200
BZA956A
BZA962A
40
BZA968A
0
0
2
4
6 V (V)
R
100
0
8
0
50
100
Tamb (°C)
Tj = 25 °C; f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2001 Sep 03
Fig.5 Power derating curve.
4
150
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
handbook, full pagewidth
ESD TESTER
RZ
450 Ω
BZA900A-series
RG 223/U
50 Ω coax
CZ
10×
ATTENUATOR
DIGITIZING
OSCILLOSCOPE
50 Ω
note 1
1/4 BZA900A
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
Note 1: attenuator is only used for open
socket high voltage measurements
vertical scale = 100 V/div
horizontal scale = 50 ns/div
BZA968A
vertical scale = 5 V/div
horizontal scale = 50 ns/div
BZA962A
BZA956A
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
vertical scale = 100 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
Fig.6 ESD clamping test set-up and waveforms.
2001 Sep 03
5
MGW321
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA900A-series
APPLICATION INFORMATION
Typical common anode application
A quadruple transient suppressor in a SOT665 package makes it possible to protect four separate lines using only one
package. A simplified example is shown in Fig.7.
handbook, full pagewidth
keyboard,
terminal,
printer,
etc.
A
B
C
D
I/O
FUNCTIONAL
DECODER
BZA900A
GND
MGW316
Fig.7 Computer interface protection.
Device placement and printed-circuit board layout
Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA900A is
determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further
add to the clamping voltage (V = L di/dt) the series conductor lengths on the printed-circuit board should be kept to a
minimum. This includes the lead length of the suppression element.
In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended:
1. Place the suppression element close to the input terminals or connectors
2. Keep parallel signal paths to a minimum
3. Avoid running protection conductors in parallel with unprotected conductors
4. Minimize all printed-circuit board loop areas including power and ground loops
5. Minimize the length of the transient return path to ground
6. Avoid using shared transient return paths to a common ground point.
2001 Sep 03
6
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA900A-series
PACKAGE OUTLINE
Plastic surface mounted package; 5 leads
SOT665
D
E
A
X
Y S
S
HE
5
4
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT665
2001 Sep 03
EUROPEAN
PROJECTION
7
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA900A-series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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of an NXP Semiconductors product can reasonably be
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Export control ⎯ This document as well as the item(s)
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national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Sep 03
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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© NXP B.V. 2009
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/1000/01/pp9
Date of release: 2001 Sep 03
Document order number: 9397 750 08542