DISCRETE SEMICONDUCTORS DATA SHEET M3D370 BZA109TS 9-fold ESD Transient Suppressor Preliminary specification File under Discrete Semiconductors, SC01 1997 Sep 08 Philips Semiconductors Preliminary specification 9-fold ESD Transient Suppressor BZA109TS FEATURES DESCRIPTION • ESD rating > 8 kV, according to IEC1000-4-2 Monolithic silicon zener diode in a SOT339-1 package (SO20) for 9 bit wide undershoot/overshoot clamping, combined with fast ESD transient suppression. • SOT339 surface mount package • Common anode configuration • Non-clamping range 0 - 6.8 V, negative clamping range <0.5 V, positive clamping range >6.8 V. APPLICATIONS • Computer and peripherals • Audio and video equipment • Communication systems • Medical equipment. PINNING SOT339-1 book, halfpage 20 1 Top view Fig.1 Symbol and pinning. 1997 Sep 08 11 10 MBK198 Fig.2 Simplified outline. 2 Philips Semiconductors Preliminary specification 9-fold ESD Transient Suppressor BZA109TS LIMITING VALUES (per diode) In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IZ reverse current DC; Tamb = 25 °C − 20 mA IF forward current DC; Tamb = 25 °C − 100 mA IFT feed-through current DC; Tamb = 25 °C; note 1 − 100 mA IFSM peak forward current tp = 1 ms; square wave − 4.5 A IZSM peak reverse current tp = 1 ms; square wave 2.5 A Ptot total power dissipation Tamb = 25 °C; note 2 − 0.95 W Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT 135 K/W thermal resistance from junction to ambient; note 2 Note to the Limiting values and Thermal characteristics 1. Current is flowing from input to corresponding output. 2. One or more diodes loaded. ELECTRICAL CHARACTERISTICS (per diode) Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VZ reverse voltage IZ = 250 µA 6.4 6.8 7.2 V VF forward voltage IF = 100 mA − − 1.1 V VZSM reverse surge voltage tp = 1 ms; IZSM = 2.5 A − − 10 V IH input high current VIN = 5.25 V − − 0.5 µA RZ zener impedance IZ = 250 µA − − 100 Ω SZ temperature coefficient of VZ CD input diode capacitance 1997 Sep 08 − 3 − f = 1 MHz; VR = 0 − − 200 pF f = 1 MHz; VR = 5.25 V − − 100 pF 3 mV/K Philips Semiconductors Preliminary specification 9-fold ESD Transient Suppressor BZA109TS 10 2 Ptot (W) IZSM (A) 1.5 1 0.5 1 0 0.1 1 10 0 50 100 150 tp (ms) 200 TS (°C) All diodes loaded. Fig.3 Maximum non-repetitive peak reverse current as a function of the pulse time. Fig.4 Power derating curve. 150 100 P ZSM (W) CD (pF) 100 10 50 0 1 0.1 1 0 10 1 2 3 4 5 6 VZ (V) tp (ms) PZSM = VZSM x IZSM; VZSM is the non-repetitive peak reverse voltage at IZSM. Fig.5 Tj = 25 °C; f = 1 MHz. Maximum non-repetitive peak reverse power dissipation as a function of the pulse duration (square pulse). 1997 Sep 08 Fig.6 4 Diode capacitance as a function of the working voltage; typical values. Philips Semiconductors Preliminary specification 9-fold ESD Transient Suppressor BZA109TS GRAPHICAL DATA IEC 1000-4-2 network CZ = 150 pF; R Z = 330 Ω Note 1: attenuator is only used for open socket high voltage measurements Vertical Scale = 10 V/Div Horizontal Scale = 50 ns/Div Vertical Scale = 100 V/Div Horizontal Scale = 50 ns/Div output GND GND input GND Unclamped +1 kV ESD Voltage Waveform (IEC1000-4-2 network) Clamped +1 kV ESD Voltage Waveform (IEC1000-4-2 network) Vertical Scale = 10 V/Div Horizontal Scale = 50 ns/Div GND GND input Vertical Scale = 100 V/Div Horizontal Scale = 50 ns/Div GND output Unclamped -1 kV ESD Voltage Waveform (IEC1000-4-2 network) Fig.7 1997 Sep 08 Clamped -1 kV ESD Voltage Waveform (IEC1000-4-2 network) ESD clamping test set-up and waveforms. 5 Philips Semiconductors Preliminary specification 9-fold ESD Transient Suppressor BZA109TS TYPICAL COMMON ANODE APPLICATION A nine-fold transient suppressor in a SOT339 package gives the possibility to protect nine separate lines using only one package. Two simplified examples are illustrated below. Fig.8 Computer interface protection. Fig.9 Microprocessor protection. 1997 Sep 08 6 Philips Semiconductors Preliminary specification 9-fold ESD Transient Suppressor BZA109TS DEVICE PLACEMENT AND PRINTED-CIRCUIT BOARD LAYOUT Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA109TS is determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further add to the clamping voltage (V = L di/dt) the printed-circuit board layout should use minimal series conductor lengths. This includes the lead length of the suppression element. In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended: 1. Place the suppression element in the area of the input terminals or connectors. 2. Reduce parallel signal paths. 3. Avoid running protection conductors in parallel with unprotected conductors. 4. Minimize all printed-circuit board loop areas including power and ground loops. 5. Minimize the length of the transient return path to ground. 6. Avoid using shared transient return paths to a common ground point. 1997 Sep 08 7 Philips Semiconductors Preliminary specification 9-fold ESD Transient Suppressor BZA109TS PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm D SOT339-1 E A X c HE y v M A Z 20 11 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 10 w M bp e detail X 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) θ mm 2.0 0.21 0.05 1.80 1.65 0.25 0.38 0.25 0.20 0.09 7.4 7.0 5.4 5.2 0.65 7.9 7.6 1.25 1.03 0.63 0.9 0.7 0.2 0.13 0.1 0.9 0.5 8 0o Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT339-1 1997 Sep 08 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 93-09-08 95-02-04 MO-150AE 8 o Philips Semiconductors Preliminary specification 9-fold ESD Transient Suppressor BZA109TS DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Sep 08 9 Philips Semiconductors Preliminary specification 9-fold ESD Transient Suppressor BZA109TS NOTES 1997 Sep 08 10 Philips Semiconductors Preliminary specification 9-fold ESD Transient Suppressor BZA109TS NOTES 1997 Sep 08 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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