DISCRETE SEMICONDUCTORS DATA SHEET M3D743 BZA900A-series Quadruple ESD transient voltage suppressor Product data sheet 2001 Sep 03 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA900A-series FEATURES PINNING • ESD rating >8 kV, according to IEC61000-4-2 PIN DESCRIPTION • SOT665 surface mount package 1 cathode 1 • Common anode configuration. 2 common anode 3 cathode 2 APPLICATIONS 4 cathode 3 • Computers and peripherals 5 cathode 4 • Audio and video equipment • Communication systems DESCRIPTION handbook, halfpage 5 4 Monolithic transient voltage suppressor diode in a five lead SOT665 package for 4-bit wide ESD transient suppression. 1 3 2 4 5 MARKING 1 TYPE NUMBER 2 3 MGW315 MARKING CODE BZA956A Z1 BZA962A Z2 BZA968A Z3 Fig.1 Simplified outline (SOT665) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode IZ working current Tamb = 25 °C − note 1 mA IF continuous forward current Tamb = 25 °C − 200 mA IFSM non-repetitive peak forward current tp = 1 ms; square pulse − 4 A Ptot total power dissipation Tamb = 25 °C; note 2; see Fig.5 − 335 mW PZSM non repetitive peak reverse power dissipation: square pulse; tp = 1 ms; see Fig.3 BZA956A − 16 W BZA962A − 15 W BZA968A − 14 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Notes 1. DC working current limited by Ptot(max). 2. Device mounted on standard printed-circuit board. 2001 Sep 03 2 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA900A-series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient all diodes loaded 370 K/W Rth j-s thermal resistance from junction to solder point; note 1 one diode loaded 135 K/W all diodes loaded 125 K/W MAX. UNIT Note 1. Solder point of common anode (pin 2). ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR reverse current CONDITIONS IF = 200 mA 1.3 V BZA956A VR = 3 V 1000 nA BZA962A VR = 4 V 500 nA BZA968A VR = 4.3 V 100 nA Table 1 Per type; BZ956A to BZA968A Tj = 25 °C unless otherwise specified. TYPE WORKING VOLTAGE VZ (V) at IZ = 1 mA DIFFERENTIAL TEMP. DIODE CAP. RESISTANCE COEFF. Cd (pF) rdif (Ω) SZ (mV/K) at at f = 1 MHz; at IZ = 1 mA IZ = 1 mA VR = 0 MIN. TYP. MAX. MAX. TYP. BZA956A 5.32 5.6 5.88 400 0.3 125 2.2 BZA962A 5.89 6.2 6.51 300 1.6 105 2.1 BZA968A 6.46 6.8 7.14 200 2.2 90 2.0 2001 Sep 03 3 MAX. NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 1 ms; Tamb = 25 ×°C MAX. NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA900A-series GRAPHICAL DATA MGW318 10 MGW319 102 handbook, halfpage handbook, halfpage I ZSM PZSM (A) (W) BZA956A BZA956A BZA962A 1 10 BZA968A BZA962A BZA968A 10−1 10−2 10−1 1 t p (ms) 1 10−2 10 10−1 1 t p (ms) 10 PZSM = VZSM × IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM. Fig.3 Fig.2 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). Maximum non-repetitive peak reverse current as a function of pulse time. MGT586 MGW320 120 400 handbook, halfpage handbook, halfpage Ptot (mW) Cd (pF) 300 80 200 BZA956A BZA962A 40 BZA968A 0 0 2 4 6 V (V) R 100 0 8 0 50 100 Tamb (°C) Tj = 25 °C; f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2001 Sep 03 Fig.5 Power derating curve. 4 150 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor handbook, full pagewidth ESD TESTER RZ 450 Ω BZA900A-series RG 223/U 50 Ω coax CZ 10× ATTENUATOR DIGITIZING OSCILLOSCOPE 50 Ω note 1 1/4 BZA900A IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω Note 1: attenuator is only used for open socket high voltage measurements vertical scale = 100 V/div horizontal scale = 50 ns/div BZA968A vertical scale = 5 V/div horizontal scale = 50 ns/div BZA962A BZA956A GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND GND vertical scale = 100 V/div horizontal scale = 50 ns/div vertical scale = 5 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) Fig.6 ESD clamping test set-up and waveforms. 2001 Sep 03 5 MGW321 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA900A-series APPLICATION INFORMATION Typical common anode application A quadruple transient suppressor in a SOT665 package makes it possible to protect four separate lines using only one package. A simplified example is shown in Fig.7. handbook, full pagewidth keyboard, terminal, printer, etc. A B C D I/O FUNCTIONAL DECODER BZA900A GND MGW316 Fig.7 Computer interface protection. Device placement and printed-circuit board layout Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA900A is determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further add to the clamping voltage (V = L di/dt) the series conductor lengths on the printed-circuit board should be kept to a minimum. This includes the lead length of the suppression element. In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended: 1. Place the suppression element close to the input terminals or connectors 2. Keep parallel signal paths to a minimum 3. Avoid running protection conductors in parallel with unprotected conductors 4. Minimize all printed-circuit board loop areas including power and ground loops 5. Minimize the length of the transient return path to ground 6. Avoid using shared transient return paths to a common ground point. 2001 Sep 03 6 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA900A-series PACKAGE OUTLINE Plastic surface mounted package; 5 leads SOT665 D E A X Y S S HE 5 4 A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT665 2001 Sep 03 EUROPEAN PROJECTION 7 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA900A-series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Sep 03 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/1000/01/pp9 Date of release: 2001 Sep 03 Document order number: 9397 750 08542