SENSITRON SEMICONDUCTOR SHD114512 SHD114512A SHD114512B TECHNICAL DATA DATA SHEET 4518, REV. A POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra Low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Thermal Resistance Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR RthJC TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave (per leg) TJ = 25 C, IAS = 1.3 A, L = 40mH (per leg) IAS decay linearly to 0 in 1 s limited by TJ max VA=1.5VR Per Package - Max. 45 60 Units V A 860 A 27 mJ 1.3 A 0.7 -65 to +175 -65 to +175 C/W C C Electrical Characteristics: Characteristics Max. Forward Voltage Drop Symbol VF1 Condition Max. Units 0.60 V @ 60A, Pulse, TJ = 25 C (per leg) measured at the leads VF2 0.57 V @ 60A, Pulse, TJ = 125 C (per leg) measured at the leads Max. Reverse Current IR1 @VR = 45V, Pulse, 4.5 mA TJ = 25 C (per leg) IR2 @VR = 45V, Pulse, 210 mA TJ = 125 C (per leg) Max. Junction Capacitance CT 2400 pF @VR = 5 V, TC = 25 C fSIG = 1 MHz, VSIG = 50mV (p-p) (per leg) Due to the nature of the 45V Schottky devices, some degradation in trr performance at high temperatures should be expected, unlike conventional lower voltage Schottkys. ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD114512 SHD114512A SHD114512B SENSITRON TECHNICAL DATA DATA SHEET 4518, REV. A Mechanical Dimensions: in inches / mm .560±.020 .550±.020 (14.0±.508) .410±.010 (10.4±.254) (14.2±.508) .410±.010 (10.4±.254) .410±.010 (10.4±.254) .410±.010 (10.4±.254) .410±.010 (10.4±.254) .075 (1.91) Max .200±.010 (5.08 ±.254) Moly Lid .150±.010 (3.81±.254) .410±.010 (10.4±.254) .015±.005 (.381±.127) .020±.005 R (.508±.127 ) Copper Anode .090 (2.29) Max Alumina Ring .020±.005 R (.508±.127 ) .075 (1.91) Max Moly Lid .020±.002 (.508±.051) Moly Bas e (Cathode) Alumina Ring Alumina Ring .060±.010 (1.52±.254) Moly Anode Moly Base (Cathode) Moly .015±.002 (.381±.051) .060±.010 SHD-3 SHD-3A SHD-3B Typical Forward Characteristics Typical Reverse Characteristics 3 2 10 Instantaneous Reverse Current - I R (mA) 10 150 °C 101 102 150 °C 125 °C 101 100 °C 100 75 °C 50 °C 10-1 125 °C 25 °C 10-2 0 25 °C 100 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) (1.52±.254) 10-1 0.0 0.2 0.4 0.6 Forward Voltage Drop -FV(V) 0.8 10 20 30 40 Reverse Voltage - RV (V) 50 Typical Junction Capacitance 2500 2300 2100 1900 1700 1500 1300 1100 900 700 500 0 10 20 30 40 Reverse Voltage - RV (V) Vf Curves shown are for die only. ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] 50 SENSITRON SHD114512 SHD114512A SHD114512B TECHNICAL DATA DATA SHEET 4518, REV. 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When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]