4519

SENSITRON
SEMICONDUCTOR
SHD114522
SHD114522A
SHD114522B
TECHNICAL DATA
DATA SHEET 4519, REV. A
POWER SCHOTTKY RECTIFIER
Low Reverse Leakage
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Ultra Low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle NonRepetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche
Current
Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
Symbol
VRWM
IF(AV)
IFSM
EAS
IAR
RthJC
TJ
Tstg
Condition
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave
(per leg)
TJ = 25 C, IAS = 1.3 A,
L = 40mH (per leg)
IAS decay linearly to 0 in 1 s
limited by TJ max VA=1.5VR
Per Package
-
Max.
45
60
Units
V
A
860
A
27
mJ
1.3
A
0.7
-65 to +175
-65 to +175
C/W
C
C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Symbol
VF1
Condition
Max.
Units
0.66
V
@ 60A, Pulse, TJ = 25 C
(per leg) measured at the leads
VF2
0.59
V
@ 60A, Pulse, TJ = 125 C
(per leg) measured at the leads
Max. Reverse Current
IR1
@VR = 45V, Pulse,
1.2
mA
TJ = 25 C (per leg)
IR2
@VR = 45V, Pulse,
45
mA
TJ = 125 C (per leg)
Max. Junction Capacitance
CT
2400
pF
@VR = 5 V, TC = 25 C
fSIG = 1 MHz,
VSIG = 50mV (p-p) (per leg)
Due to the nature of the 45V Schottky devices, some degradation in trr performance at high temperatures should be
expected, unlike conventional lower voltage Schottkys.
©2012 Sensitron Semiconductor 221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
SHD114522
SHD114522A
SHD114522B
SENSITRON
TECHNICAL DATA
DATA SHEET 4519, REV. A
Mechanical Dimensions: in inches / mm
.560±.020
.550±.020
(14.0±.508)
.410±.010
(10.4±.254)
(14.2±.508)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.200±.010
(5.08 ±.254)
.075 (1.91) Max
Moly Lid
.150±.010
(3.81±.254)
.410±.010
(10.4±.254)
.015±.005
(.381±.127)
.020±.005 R
(.508±.127 )
Copper Anode
.090 (2.29) Max
Alumina Ring
.020±.005 R
(.508±.127 )
.075 (1.91)
Max
Moly
Lid
.020±.002
(.508±.051)
Moly Bas e
(Cathode)
Alumina
Ring
Alumina Ring
.060±.010
(1.52±.254)
Moly Anode
Moly Base
(Cathode)
Moly
.015±.002
(.381±.051)
.060±.010
SHD-3
SHD-3A
SHD-3B
Typical Forward Characteristics
Typical Reverse Characteristics
3
2
10
Instantaneous Reverse Current - IR (mA)
10
175 °C
125 °C
175 °C
102
150 °C
1
10
125 °C
100 °C
100
75 °C
-1
10
50 °C
10-2
25 °C
10-3
0
101
0.2
0.3
0.4
0.5
0.6
0.7
Forward Voltage Drop -FV(V)
Vf Curves shown are for die only.
10
20
30
Reverse Voltage - R
V (V)
40
50
Typical Junction Capacitance
25 °C
0.8
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
(1.52±.254)
2500
2000
1500
1000
500
0
10
20
30
Reverse Voltage - R
V (V)
40
©2012 Sensitron Semiconductor 221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
50
SHD114522
SHD114522A
SHD114522B
SENSITRON
TECHNICAL DATA
DATA SHEET 4519, REV. A
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©2012 Sensitron Semiconductor 221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]