MAGX-000040-00500P GaN Wideband 5 W Pulsed Transistor in Plastic Package DC - 4.0 GHz Features Rev. V1 Functional Schematic GaN on SiC D-Mode Transistor Technology Common-Source Configuration Unmatched, Coupled DC and RF Ideal for Pulsed and CW Applications up to 50 V 50 V Typical Bias, Class AB Excellent Thermal Resistance Thermally-Enhanced Plastic SOT-89 Package MTTF = 600 years (TJ < 200°C) Halogen-Free “Green” Mold Compound RoHS* Compliant and 260°C Reflow Compatible MSL1 Description The MAGX-000040-00500P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall transistor size, cost and weight in a “TRUE SMT”TM plastic package. Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C. The small package size and excellent RF performance make it an ideal replacement for costly flanged or metal-backed module components. Pin Configuration Ordering Information1 Pin No. Function 1 VGG/RFIN Part Number Package 2 GND MAGX-000040-00500P Bulk Packaging 3 VDD/RFOUT MAGX-000040-SB2PPR Sample Board 4 GND 1. Reference Application Note M513 for reel size information. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000040-00500P GaN Wideband 5 W Pulsed Transistor in Plastic Package DC - 4.0 GHz Rev. V1 Typical Narrowband RF Performance2: VDD = 50 V, IDQ = 17 mA, TA = 25°C Parameter 1 GHz 1.6 GHz 3.0 GHz 3.5 GHz Units Linear Gain 18 17 14 13.5 dB Pulsed Peak Output Power (P3dB) 5.3 5.3 5.3 5.3 W Pulsed Power Gain (P3dB) 15 14 11 10.5 dB Drain Efficiency (P3dB) 61 55 53 50 % 2. Device optimally matched in narrowband load-pull test system. Electrical Specifications3: Freq. = 1.6 GHz, VDD = 50 V, IDQ = 17 mA, TA = 25°C, Z0 = 50 Ω Parameter Test Conditions Symbol Min. Typ. Max. Units RF FUNCTIONAL TESTS: Pulse Width = 1 ms, 10% Duty Cycle Pulsed Peak Output Power PIN = 0.28 W Peak POUT 4.5 5.3 - Wpk Pulsed Power Gain PIN = 0.28 W Peak GP 12 13 - dB Pulsed Drain Efficiency PIN = 0.28 W Peak ηD 47 51.3 - % Load Mismatch Stability PIN = 0.28 W Peak VSWR-S - 5:1 - - Load Mismatch Tolerance PIN = 0.28 W Peak VSWR-T - 10:1 - - P3dB POUT - 4 - W RF FUNCTIONAL TESTS: CW CW Output Power 3. Device measured in MACOM 1.4-1.6 GHz evaluation board. See tuning information on page 4. Electrical Characteristics: TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - - 200 μA Gate Threshold Voltage VDS = 5 V, ID = 0.6 mA VGS (TH) -5 -3 -2 V Forward Transconductance VDS = 5 V, ID = 1500 mA GM 0.1 - - S Input Capacitance VDS = 0 V, VGS = -8 V, F = 1 MHz CISS - 0.5 - pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 0.18 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 0.05 - pF DC CHARACTERISTICS DYNAMIC CHARACTERISTICS 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000040-00500P GaN Wideband 5 W Pulsed Transistor in Plastic Package DC - 4.0 GHz Rev. V1 Absolute Maximum Ratings 4,5,6,7,8 Parameter Absolute Max. Input Power 30 dBm Drain Supply Voltage, VDD +65 V Gate Supply Voltage, VGG -8 V to 0 V Supply Current, IDD 300 mA Power Dissipation, CW (85ºC) 12 W Power Dissipation, Pulsed Mode (85°C) 31 W Junction Temperature7 200°C Operating Temperature -40°C to +95°C Storage Temperature -65°C to +150°C 4. 5. 6. 7. Exceeding any one or combination of these limits may cause permanent damage to this device. MACOM does not recommend sustained operation near these survivability limits. For saturated performance it is recommended that the sum of (3 * VDD + abs (VGG)) < 175 V. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours. Junction temperature directly affects device MTTF and should be kept as low as possible to maximize lifetime. 8. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN)). Typical CW thermal resistance (ӨJC) = 10.5°C/W. Typical transient thermal resistance (ӨJC) = ӨJC = 4.0°C/W (1 ms pulse, 10% duty cycle). 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000040-00500P GaN Wideband 5 W Pulsed Transistor in Plastic Package DC - 4.0 GHz Rev. V1 L-Band Evaluation Board Details and Recommended Tuning Solutions Parts measured on evaluation board (12-mil thick RO4003C). Electrical and thermal ground is provided using a copper-filled, via-hole array (not pictured), and evaluation board is mounted to a metal plate. Matching is provided using lumped elements. Recommended tuning solutions for 2 frequency ranges are detailed in the parts list below. Bias Sequencing Turning the device ON 1. Set VG to the pinch-off value (VP), typically -5 V. 2. Turn on VD to nominal voltage (50 V). 3. Increase VGS to desired quiescent current. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VG down to VP. 3. Turn off VD. 4. Turn off VG. Parts List Part C1 C2 C3 C4 C5 C6 C7 C8 C9 L1 L2 L3 L4 L5 L6 L7 R1 R2 R3 R4 Frequency = 1.0 - 1.2 GHz 10 pF, 600L, ATC 3.9 pF || 0.5 pF, 600L, ATC9 6.8 pF || 1 pF, 600L, ATC9 10 nF, 0402, Murata 10 nF, 0603, Murata 3.3 pF, 600L, ATC 10 pF, 600L, ATC 1.3 pF, 600L, ATC 2 pF, 600L, ATC 27 nH, 0402HP, Coilcraft 4.3 nH, 0402HP, Coilcraft 3.3 nH, 0402HP, Coilcraft 30 nH, 0402HP, Coilcraft 16 nH, 0402HP, Coilcraft 8.2 nH, 0402HP, Coilcraft 2.7 nH, 0402HP, Coilcraft 49.9 Ω, 0402, Panasonic 5.1 Ω, 0402, Panasonic 200 Ω, 0402, Panasonic 1 kΩ, 0402, Panasonic Frequency = 1.4 - 1.6 GHz 10 pF, 600L, ATC 2.4 pF, 600L, ATC 5.6 pF, 600L, ATC 10 nF, 0402, Murata 10 nF, 0603, Murata 2.4 pF, 600L, ATC 10 pF, 600L, ATC 1.3 pF, 600L, ATC 1.6 pF, 600L, ATC 27 nH, 0402HP, Coilcraft 3.3 nH, 0402HP, Coilcraft 1 nH, 0402HP, Coilcraft 12 nH, 0402HP, Coilcraft 8.2 nH, 0402HP, Coilcraft 3.9 nH, 0402HP, Coilcraft 3.3 nH, 0402HP, Coilcraft 49.9 Ω, 0402, Panasonic 5.1 Ω, 0402, Panasonic 200 Ω, 0402, Panasonic 1 kΩ, 0402, Panasonic 9. Parallel combination of two capacitors. 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000040-00500P GaN Wideband 5 W Pulsed Transistor in Plastic Package DC - 4.0 GHz Rev. V1 S-Band Evaluation Board Details and Recommended Tuning Solutions Parts measured on evaluation board (12-mil thick RO4003C). Electrical and thermal ground is provided us ing a copper -f illed, via-hole array (not pictured), and evaluation board is mounted to a metal plate. Matching is provided using lumped elements. Recommended tuning solution for the 2.9-3.3 GHz frequency band is detailed in the parts list below. Bias Sequencing Turning the device ON 1. Set VG to the pinch-off value (VP), typically -5 V. 2. Turn on VD to nominal voltage (50 V). 3. Increase VGS to desired quiescent current. 4. Apply RF power to desired level. Parts List, 2.9 - 3.3 GHz Part C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 L1 L2 R1 R2 R3 Description 5.6 pF, 600L, ATC 5.6 pF, 600L, ATC 1 pF || 0.02 pF, 600L, ATC10 1 pF, 600L, ATC 10 nF, 0402, Murata 0.8 pF, 600L, ATC 1.5 pF, 600L, ATC 2.4 pF, 600L, ATC 1 nF, 0603, Murata 10 nF, 0603, Murata 1.1 pF, 600L, ATC 1.5 pF, 600L, ATC 1.6 pF, 600L, ATC 1.3 pF, 600L, ATC 0.6 pF, 600L, ATC 0.2 pF, 600L, ATC 0.6 pF, 600L, ATC 0.3 pF, 600L, ATC 56 nH, 0402HP, Coilcraft 12 nH, 0402HP, Coilcraft 100 Ω, 0402, Panasonic 1.2 kΩ, 0402, Panasonic 100 Ω, 0402, Panasonic Turning the device OFF 1. Turn the RF power off. 2. Decrease VG down to VP. 3. Turn off VD. 4. Turn off VG. 10. Parallel combination of two capacitors. 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000040-00500P GaN Wideband 5 W Pulsed Transistor in Plastic Package DC - 4.0 GHz Rev. V1 SOT-89 Package Outline and Landing Pattern11,12 Handling Procedures 11. Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Lead plating is 100% Sn matte. 12. Landing pattern indicates dimensions of solder mask opening. Cu-filled via holes under the ground are typically used for optimal thermal performance. Recommended pattern: 8 mil diameter , 8 mil spacing. Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Devices and Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 1A devices. 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000040-00500P GaN Wideband 5 W Pulsed Transistor in Plastic Package DC - 4.0 GHz Rev. V1 Applications Section S-Parameter Data: TA = 25°C, VDD = 28 V, IDQ = 15 mA Device S11 and S22 2. 0 6 0. 0.8 1.0 Swp Max 5GHz m2: 1.6 GHz Mag 0.9085 Ang -140.3 Deg 0. 4 0 4. 5.0 0.2 m4 m3: 2.2 GHz Mag 0.8917 Ang -168.4 Deg m4: 2.8 GHz Mag 0.8747 Ang 168.5 Deg 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 10.0 0.2 0 S(2,2) 600um_Vd28_Id15 m1: 1 GHz Mag 0.9428 Ang -102 Deg 0 3. m5 S(1,1) 600um_Vd28_Id15 m5: 3.5 GHz Mag 0.8714 Ang 142.8 Deg m3 -10.0 2 -0. m7 -0.8 m1 m8 m9: 2.8 GHz Mag 0.825 Ang -101.1 Deg Swp Min 0.01GHz -1.0 -0 .6 m9 .0 -2 m10 m8: 2.2 GHz Mag 0.8275 Ang -82.97 Deg -3 .0 .4 -0 m7: 1.6 GHz Mag 0.8393 Ang -63.34 Deg 4 .0 -5. 0 m6 m2 m6: 1 GHz Mag 0.866 Ang -42 Deg m10: 3.5 GHz Mag 0.8224 Ang -121.4 Deg Gmax and K-Factor vs Frequency 50 DB(GMax()) (L) 600um_Vd28_Id15 45 5 K() (R) 600um_Vd28_Id15 4.5 40 4 35 3.5 30 3 25 2.5 20 2 15 1.5 10 1 5 0.5 0 0 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) 3.5 4 4.5 5 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000040-00500P GaN Wideband 5 W Pulsed Transistor in Plastic Package DC - 4.0 GHz Rev. V1 Applications Section Typical Performance Curves (reference 1.4-1.6 GHz parts list): 1.6 GHz, 1 ms Pulse, 10% Duty Cycle, VDD = 50 V, TA = 25°C, Z0 = 50 Ω Output Power vs. Input Power Gain vs. Input Power Drain Efficiency vs. Input Power 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000040-00500P GaN Wideband 5 W Pulsed Transistor in Plastic Package DC - 4.0 GHz Rev. V1 Applications Section Typical Performance Curves (reference 2.9-3.3 GHz parts list): 300 μs Pulse, 10% Duty Cycle, VDD= 50 V, TA = 25°C, Z0 = 50 Ω Output Power and Efficiency vs. Frequency (PIN = 26 dBm) Output Power and Efficiency vs. Input Power (Frequency = 3.0 GHz) 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298