T PL IA N M CO *R oH S Features Applications ■ Low capacitance - 0.3 pF ■ USB 3.0 ■ ESD protection ■ HDMI 1.4 ■ Vcc + six I/O data lines ■ High speed port protection ■ RoHS compliant* ■ Portable electronics CDDFN10-0506N - TVS/Steering Diode Array General Information The Bourns® Model CDDFN10-0506N device provides ESD and EFT protection for high speed data ports meeting IEC 61000-4-2 (ESD) and IEC 61000-4-4 (EFT) requirements. The Transient Voltage Suppressor array, protecting up to six data lines, offers a Working Peak Voltage of 5.0 V. 2 1 The DFN-10 package is easy to handle with standard pick and place equipment and their flat configuration minimizes roll away. 4 5 6 7 10 9 Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Parameter Symbol Rating Unit Ipp 3.5 A Peak Pulse Current (tp = 8/20 μS) Ppk 40 W Operating Supply Votage (Vdd - Gnd) VDC 6 V Peak Pulse Current (tp = 8/20 μS) DC Voltage on any I/O Pad VIO (Gnd -0.5) to (Vdd +0.5) V Storage Temperature TSTG -55 to +150 ºC Operating Temperature TOPR -40 to +85 ºC ESD Protection per IEC 61000-4-2 Contact Discharge Air Discharge ±8 ±15 kV kV EFT Protection per IEC 61000-4-4 @ 5/50 ns 40 A Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Working Peak Voltage 1 VWM Breakdown Voltage @ 1 mA 1 VBR Forward Voltage @ 15 mA 2 VF Leakage Current @ VWM 1 Min. Typ. Max. Unit 5.0 V 6.0 V 1.2 V IL 2.5 μA Leakage Current @ VWM 3 IIO 1 μA Channel Capacitance 3 @ 2.5 V, 1 MHz CIO 0.25 0.35 pF CCROSS 0.05 0.07 pF ESD Dynamic Turn-on Resistance 5 Rdynamic_I/O 0.35 Ω ESD Dynamic Turn-on Resistance 6 Rdynamic_VDD 0.2 Ω Channel to Channel Capacitance 4 @ 2.5 V, 1 MHz Note 1: Pin 2 to Pin 9 Note 2: Pin 9 to Pin 2. Note 3: Pin 1, 4, 5, 6, 7 or 10 to Ground. 0.8 Note 4: Between I/O 1, 4, 5, 6, 7 or 10. Note 5: Any I/O Pin to Ground. Note 6: VDD Pin to Ground. *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CDDFN10-0506N - TVS/Steering Array 3312 - 2 mm SMD TrimmingDiode Potentiometer Performance Curves Insertion Loss S21 Crosstalk Between I/Os 0 0 VDD = 5 V VDD = Floated -6 VDD = 5 V VDD = Floated -10 Analog Cross Talk (dB) Insertion Loss (dB) -3 -9 -12 -15 -18 -21 -24 -20 -30 -40 -50 4.1 GHz: -3 dB -27 -30 1e+8 -60 1e+8 1e+9 1e+9 Frequency (Hz) Frequency (Hz) Channel Capacitance versus Voltage Channel to Channel Capacitance versus Voltage 0.50 0.10 f = 1 MHz, T = 25 °C 0.08 Input Capacitance (pF) Input Capacitance (pF) f = 1 MHz, T = 25 °C 0.09 0.45 0.40 0.35 VDD = Floated 0.30 0.25 0.07 VDD = Floated 0.06 0.05 VDD = 5 V 0.04 0.03 0.02 VDD = 5 V 0.01 0.20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Input Voltage (V) Input Voltage (V) Typical V/I Characteristic 18 VDD to GND 16 V_pulse 14 Pulse from a transmission line Current (A) 12 TLP_V 10 TLP_I + 100 ns DUT - I/O to GND 8 6 4 2 0 0 1 2 3 4 5 6 7 8 Voltage (V) 9 10 11 12 13 14 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CDDFN10-0506N - TVS/Steering Diode Array Reference Application Bourns® Model CDDFN10-0506N is designed to protect high speed data ports from ESD transients. For high speed ports above 5 Gb/s such as USB 3.0, differential signalling is used where the need to keep impedance constant is a critical requirement. The use of a DFN-10 package using a “feed through” layout provides a minimum impedance change on the high speed data line while the ultra-low capacitance performance of the device limits the signal loss degradation of each channel. 1 To I/O-port Connector VDD rail * Optional 0.1 μF Chip Cap. 2 VDD 3 N.C. 4 To I/O-port Connector data line 10 data line To Protected IC 9 GND 8 N.C. 7 5 data line data line data line 6 To Protected IC data line CDDFN10-0506N Layout on USB 3.0 Port CDDFN10-0506N Using 5 GHz Eye Diagram Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CDDFN10-0506N - TVS/Steering Diode Array Product Dimensions Recommended Footprint This is a molded DFN10 package with lead free 100 % Matte Sn on the lead frame. It has a flammability rating of UL 94V-0. 1.924 - 2.076 (0.076 - 0.082) 0.400 (0.015) TYP. 4.024 - 4.176 (0.158 - 0.164) 0.150 - 0.250 (0.006 - 0.010) 1.924 - 2.076 (0.076 - 0.082) 0.800 (0.031) TYP. 1.300 - 1.500 (0.051 - 0.059) 0.700 - 0.900 (0.028 - 0.035) 0.450 - 0.550 (0.018 - 0.022) 0.000 - 0.050 (0.000 - 0.002) REF. MIN. 0.152 (0.006) How to Order 0.800 TYP. (0.031) N10 0.200 (0.008) N6 CD DFN10 - 05 06 N 0.224 - 0.376 (0.009 - 0.015) 0.700 - 0.900 (0.028 - 0.035) N5 N1 0.150 - 0.250 (0.006 - 0.010) 1.300 - 1.500 (0.051 - 0.059) DIMENSIONS: 0.600 (0.023) TYP. 0.200 (0.008) MIN. Common Diode Chip Diode Package DFN10 = DFN-10 Package Working Peak Reverse Voltage 05 = 5.0 VRWM (Volts) Number of Lines 06 = 6 Data Lines Suffix N = Low Capacitance MM (INCHES) Typical Part Marking Pin Out 1 CDDFN10-0506N ........................................................................506 10 2 9 3 8 4 7 5 6 TOP VIEW Pin 1 2 3 4 5 6 7 8 9 10 Center Pad Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Function I/O LINE VCC LINE N.C. I/O LINE I/O LINE I/O LINE I/O LINE N.C. Ground I/O LINE Ground CDDFN10-0506N - TVS/Steering Diode Array 3312 - 2 mm SMD Trimming Potentiometer Packaging Information The product will be dispensed in tape and reel format (see diagram below). P 0 P 1 d T E Index Hole 120 ° F D2 W B D1 D P A Trailer ....... ....... End C Device ....... ....... Leader ....... ....... ....... ....... W1 Start DIMENSIONS: 10 pitches (min.) 10 pitches (min.) Direction of Feed Item Symbol DFN-10 Carrier Width A 2.21 ± 0.05 (0.087 ± 0.002) Carrier Length B 4.22 +0.05/-0.04 (0.166 +0.002/-0.002) Carrier Depth C 0.81 ± 0.05 (0.032 ± 0.002) Sprocket Hole d 1.50 +0.1/-0 (0.059 +0.004/-0) Reel Outside Diameter D 180 ± 3 (7.087 ± .118) Reel Inner Diameter D1 Feed Hole Diameter D2 13.0 +0.5/-0.2 (0.512 +0.020/-0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 5.50 ± 0.05 (0.217 ± 0.002) Punch Hole Pitch P 4.00 ± 0.10 (0.157 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.05 (0.079 ± 0.002) T 0.6 MAX. (0.024) Tape Width W 12.3 MAX. (0.484) Reel Width W1 18.4 MAX. (0.724) -- Devices are packed in accordance with EIA standard RS-481-A. 50.0 MIN. (1.969) Overall Tape Thickness Quantity per Reel MM (INCHES) 3000 REV. 09/15 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.