T PL IA N OM C *R oH S Features Applications n RoHS compliant* n USB 3.1 n Low capacitance - 0.02 pF (I/O to I/O) n USB 3.0 LE AD F RE E n ESD protection to IEC 61000-4-2 (Level 4) CDDFN10-0516P - Surface Mount TVS Diode Array General Information Ro VE LEA HS RS D C ION FRE OM S E PL AR IA E NT * The CDDFN10-0516P device provides ESD protection for highspeed data ports, meeting IEC 61000-4-2 (Level 4) requirements. The Transient Voltage Suppressor array, protecting up to six data lines, offers Working Peak Reverse Voltages of 5 V (one line), 3.3 V (two lines) and 2.2 V (four lines) compatible with USB 3.1. 2 5V 3.3 V 1 The DFN10 packaged device has an ultra-low typical capacitance of only 0.02 pF between I/O lines. This allows it to be used for protecting sensitive components used on high-speed interfaces. The small footprint of the device allows for flow-through routing on the PCB, helping to maintain matched impedances of the high-speed data lines. 10 2.2 V 4 5 6 7 9 Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Peak Pulse Current (tp = 8/20 μS) (1) ESD (per IEC 61000-4-2 Contact) ESD (per IEC 61000-4-2 Air) Operating Temperature Storage Temperature Symbol Ipp CDDFN10-0516P 4 10 15 -40 to +85 -55 to +150 TJ TSTG Unit A kV kV ºC ºC Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Pin 2 (VBUS) to Ground Parameter Symbol Working Peak Reverse Voltage VWM_BUS Breakdown Voltage @ 1 mA VBR_BUS Snap-back Voltage @ 50 mA VSB_BUS Leakage Current @ VWM_BUS IR_BUS Clamping Voltage @ IPP = 4 A VC_BUS Channel Capacitance @ 0 V, 1 MHz CIN_BUS Pin 1 or 10 (D+, D-) to Ground (Unless Otherwise Noted) Parameter Symbol Working Peak Reverse Voltage VWM_USB Breakdown Voltage @ 1 mA VBR_USB Snap-back Voltage @ 50 mA VSB_USB Leakage Current @ VWM_USB IR_USB Forward Voltage @ 15 mA VF_USB Clamping Voltage @ IPP = 4 A VC_USB Channel Capacitance @ 1.65 V, 1 MHz CIN_USB Channel to Channel Capacitance CCROSS_USB @ 1.65 V, 1 MHz (2) (3) Note 1: Pin 2 (VBUS) to Ground Note 2: Between Pins 1 and 10 (D+ to D-) Note 3: Pin 9 = 0 V Min. Typ. 6 5.5 6.5 17 Min. Typ. Max. 5 Unit V V V μA V pF 2.5 22 0.9 7.2 0.35 0.5 Unit V V V μA V V pF 0.02 0.04 pF 4.5 3.6 Max. 3.3 1 (Continued on next page) *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CDDFN10-0516P - Surface Mount TVS Diode Array Electrical Characteristics - Continued (@ TA = 25 °C Unless Otherwise Noted) Pin 4, 5, 6 or 7 (SSTX+, SSRX+, SSTX-, SSRX-) to Ground (Unless Otherwise Noted) Parameter Symbol Min. Working Peak Reverse Voltage VWM_SS Breakdown Voltage @ 1 mA VBR_SS 4.5 Snap-back Voltage @ 50 mA VSB_SS 2.4 Leakage Current @ VWM_SS IR_SS Forward Voltage @ 15 mA VF_SS Clamping Voltage @ IPP = 4 A VC_SS Channel Capacitance @ 1.2 V, 1 MHz CIN_SS Channel to Channel Capacitance CCROSS_SS @ 1.2 V, 1 MHz (3) (4) Typ. Max. 2.2 0.9 4.5 0.35 0.5 Unit V V V μA V V pF 0.02 0.04 pF 1 Note 3: Pin 9 = 0 V Note 4: Between any two I/O; Pins 4, 5, 6 or 7 (SSTX+, SSRX+, SSTX-, SSRX-) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CDDFN10-0516P - Surface Mount TVS Diode Array Performance Curves Typical Voltage vs. Capacitance CIN (4) Typical Voltage vs. Capacitance CCROSS (5) 0.05 0.8 Input Capacitance (pF) Input Capacitance (pF) 0.7 0.6 Pin 2 (VBUS) = Float, Pin 9 (GND) = 0 V 0.5 0.4 0.3 0.2 f = 1 MHz, T = 25 °C 0.1 0.0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 0.04 Pin 2 (VBUS) = Float, Pin 9 (GND) = 0 V 0.03 0.02 0.01 0.00 2.4 2.7 3.0 3.3 f = 1 MHz, T = 25 °C 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 Input Voltage (V) Input Voltage (V) Typical Analog Cross Talk (5) 0 0 -3 -10 Analog Cross Talk (dB) Insertion Loss (dB) Typical Insertion Loss S21 (4) -6 -9 -12 -15 -18 -21 -24 7.4 GHz: -3 dB -27 -30 -20 -30 -40 -50 -60 -70 1e+8 1e+9 1e+8 1e+10 1e+9 Frequency (Hz) Typical Transmission Line Pulsing (TLP) 18 Transmission Line Pulsing (TLP) Current (A) Transmission Line Pulsing (TLP) Current (A) Typical Transmission Line Pulsing (TLP) 16 V_pulse 14 Pulse from a transmission line 12 TLP_I + 100 ns 10 TLP_V DUT - 8 6 4 VBUS to GND 2 0 0 1 2 3 4 5 6 7 8 1e+10 Frequency (Hz) 9 10 Transmission Line Pulsing (TLP) Voltage (V) 11 18 16 V_pulse 14 Pulse from a transmission line 12 TLP_I + 100 ns 10 TLP_V DUT - 8 6 Pin 4, 5, 6, 7 to GND 4 Pin 1, 10 to GND 2 0 0 1 2 3 4 5 6 7 8 9 10 Transmission Line Pulsing (TLP) Voltage (V) Note 4: Any I/O Pin (1, 10, 4, 5, 6, or 7) to Ground (D+, D-, SSTX+, SSRX+, SSTX-, SSRX-) Note 5: Between any two I/O Pins (1, 10, 4, 5, 6, or 7) (D+, D-, SSTX+, SSRX+, SSTX-, SSRX-) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 11 3312 - 2 mm SMD Trimming Potentiometer CDDFN10-0516P - Surface Mount TVS Diode Array Applications Information The Model CDDFN10-0516P was designed to provide ESD and surge protection for USB 3.0 and USB 3.1 applications. USB 3.x controller ICs typically have device level ESD ratings of about 2 kV per ANSI/ESDA/JEDEC JS-001-2010, to prevent ESD damage in a manufacturing environment. For this ANSI/ESDA/JEDEC JS-001-2010 test, a 100 pF cap capacitor is discharged into the device input through a 1500 ohm resistor. A system level ESD requirement is, however, typically specified to IEC 61000-4-2, which is more stringent than JESD22-A114F requirements. The IEC 61000-4-2 test discharges a 150 pF capacitor through a 330 ohm resistor. The CDDFN10-0516P is designed to enable a USB3.x controller IC to meet system ESD levels as high as 10 kV (contact test) per the IEC 61000-4-2 Standard. The device also provides up to 4 A (8/20 µS) of surge protection on the 5 V VBUS line per IEC 61000-4-5. The Bourns® Model CDDFN10-0516P provides protection for six signal lines and a 5 V power bus. Its ultra-low capacitance minimizes signal distortion on USB 3.1 super-speed data lines with 10 Gbps data rates. The figure below shows the connection diagram for one port of a USB 3.x application. USB 3.1 provides three voltage/current options for bus power: 5 V @ up to 2 A, 12 V @ up to 5 A and 20 V @ up to 5 A. The VBUS line should only be connected to Pin 2 of the CDDFN10-0516P device if the bus voltage is limited to the 5 V option. In cases where the bus voltage is 12 V or 20 V, a separate device is required to protect the VBUS line. POWER CIRCUIT(S) VBUS USB CONNECTOR VDD GND CDDFN10-0516P 1 D+ 10 D- 2 VBUS 9 VBUS SSTX+ SSTXSSRX+ 3 NC 8 NC 4 7 5 6 SSRX- D+ DVBUS USB 3.x CONTROLLER SSTX+ SSTXSSRX+ SSRX- Flow-through package design (Top View) The flow-through package design of the Model CDDFN10-0516P simplifies signal routing on the printed circuit board. This minimizes the effect of the device connection on the signal line impedance and on system performance. The 10 Gbps eye diagrams below show that the loading of Pins 4 through 7 has a minimal impact on the performance of the USB 3.1 super-speed data lines. Performance Without Protection -15 ps 0 +15 ps Performance With Protection -15 ps 0 +15 ps Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 3312 - 2 mm SMD Trimming Potentiometer CDDFN10-0516P - Surface Mount TVS Diode Array Product Dimensions Device Pinout This is a molded DFN10 package with lead free 100 % Matte Sn on the lead frame. It has a flammability rating of UL 94V-0. 1 4.024 - 4.176 (0.158 - 0.164) 4.024 - 4.176 (0.158 - 0.164) 10 2 9 3 1.924 - 2.076 (0.076 - 0.082) 1.924 - 2.076 (0.076 - 0.082) 8 4 7 5 6 0.450 - 0.550 (0.018 - 0.022) 0.450 - 0.550 (0.018 - 0.022) (Top View) 0.000 - 0.050 (0.000 - 0.002) 0.000 - 0.050 (0.000 - 0.002) 0.152 REF. (0.006) 0.152 REF. (0.006) 0.800 TYP. (0.031) 0.800 N10 TYP. (0.031) N10 0.200 MIN. (0.008) 0.200 N6 MIN. (0.008) N6 0.224 - 0.376 (0.009 - 0.015) 0.224 - 0.376 (0.009 - 0.015) 0.700 - 0.900 (0.028 - 0.035) 0.700 - 0.900 (0.028 - 0.035) N5 N1 0.150 N1 - 0.250 (0.006 - 0.010) 0.150 - 0.250 (0.006 - 0.010) N5 1.300 - 1.500 (0.051 - 0.059) 1.300 - 1.500 (0.051 - 0.059) Function D+, D(USB Differential Pair) 2 VBUS 3, 8 N.C. 4, 5, 6, 7 SSTX+, SSTX-, SSRX+, SSRX(Super-Speed Pairs) 9 Ground Center Pad Ground Typical Part Marking CDDFN10-0516P.........................................................................516 Recommended Footprint 1.924 - 2.076 (0.076 - 0.082) 1.924 - 2.076 (0.076 - 0.082) 0.400 (0.015) 0.400 TYP. (0.015) TYP. How to Order CD DFN10 - 05 16 P 0.150 - 0.250 (0.006 - 0.010) 0.150 - 0.250 (0.006 - 0.010) 0.800 (0.031) 0.800 TYP. (0.031) TYP. 1.300 - 1.500 (0.051 - 0.059) 1.300 - 1.500 (0.051 - 0.059) 0.700 - 0.900 (0.028 - 0.035) 0.700 - 0.900 0.200 (0.028 - 0.035) (0.008) 0.200 MIN. (0.008) MIN. DIMENSIONS: Pin 1, 10 0.600 (0.023) 0.600 TYP. (0.023) TYP. Common Diode Chip Diode Package DFN10 = DFN-10 Package Working Peak Voltage 05 = 5 VRWM (Volts) Number of Lines 16 = 1 Ground / 6 Data Lines Suffix P = Ultra-low Capacitance MM (INCHES) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 3312 - 2 mm SMD Trimming Potentiometer CDDFN10-0516P - Surface Mount TVS Diode Array Packaging Information The product is packaged in an 8 mm x 4 mm tape and reel format per EIA-481-A standard. P 0 P 1 d T E IndexHole Pin1 Location 120° F D2 W B D1 D P A Trailer ....... ....... End C Device ....... ....... Leader ....... ....... ....... ....... 10pitches(min.) 10pitches(min.) W1 Start DIMENSIONS: MM (INCHES) DirectionofFeed Item Symbol DFN-10 Carrier Width A 2.21 ± 0.05 (0.087 ± 0.002) Carrier Length B 4.22 +0.05/-0.04 (0.166 +0.002/-0.002) Carrier Depth C 0.81 ± 0.05 (0.032 ± 0.002) Sprocket Hole d 1.50 +0.1/-0 (0.059 +0.004/-0) Reel Outside Diameter D 180 ± 3 (7.087 ± .118) Reel Inner Diameter D1 Feed Hole Diameter D2 13.0 +0.5/-0.2 (0.512 +0.020/-0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 5.50 ± 0.05 (0.217 ± 0.002) Punch Hole Pitch P 4.00 ± 0.10 (0.157 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.05 (0.079 ± 0.002) 50.0 MIN. (1.969) Overall Tape Thickness T 0.6 MAX. (0.024) Tape Width W 12.3 MAX. (0.484) Reel Width W1 18.4 MAX. (0.724) Quantity per Reel -- 3000 Asia-Pacific: Tel: +886-2 2562-4117 Fax: +886-2 2562-4116 EMEA: Tel: +36 88 520 390 Fax: +36 88 520 211 The Americas: Tel: +1-951 781-5500 Fax: +1-951 781-5700 www.bourns.com 01/16 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.