Composite Transistors XN6212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Collector to base voltage Rating Collector to emitter voltage of element Collector current 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) (Ta=25˚C) Symbol Ratings Unit VCBO 50 V 50 V IC 100 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C +0.1 Marking Symbol: 8V Internal Connection 6 4 ■ Electrical Characteristics Parameter 1.45±0.1 0 to 0.05 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Tr1 5 1 2 Tr2 3 (Ta=25˚C) Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V ICBO VCB = 50V, IE = 0 0.1 µA ICEO VCE = 50V, IB = 0 0.5 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 0.2 mA Forward current transfer ratio hFE VCE = 10V, IC = 5mA 60 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 10V, IC = 5mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA 0.25 V Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ Output voltage low level VOL VCC = 5V, VB = 2.5V, RL = 1kΩ VCB = 10V, IE = –2mA, f = 200MHz Collector cutoff current *1 0.5 –0.05 +0.1 0.16–0.06 0.95 3 0.4±0.2 VCEO Storage temperature 4 0.1 to 0.3 ■ Absolute Maximum Ratings Parameter 2 0.95 +0.1 UN1212 × 2 elements 5 0.8 +0.2 ■ Basic Part Number of Element ● 1.9±0.1 2.9 –0.05 +0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.1–0.1 ● 0.65±0.15 1 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 Transition frequency fT Input resistance R1 Resistance ratio R1/R2 0.99 4.9 V 0.2 150 V MHz –30% 22 +30% 0.8 1.0 1.2 kΩ Ratio between 2 elements 1 Composite Transistors XN6212 PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE VCE(sat) — IC 100 Collector current IC (mA) IB=1.0mA 0.9mA 0.8mA 120 0.7mA 0.6mA 0.5mA 100 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 0 0 2 4 6 8 10 IC/IB=10 30 10 3 1 0.3 25˚C –25˚C 0.03 Collector to emitter voltage VCE (V) 1 3 10 10000 30 200 25˚C –25˚C 100 100 1 3 3 2 10 30 100 300 1000 Collector current IC (mA) VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) Ta=75˚C IO — VIN 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 2 300 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V 0 0.3 Cob — VCB 6 Ta=75˚C 0.1 0.01 0.1 12 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 30 VCB 100 (V) 1 0.4 0.6 0.8 1.0 Input voltage VIN 1.2 (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100