Composite Transistors XN121M NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN221M × 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 ■ Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 4 0.95 ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.9 -0.05 ● 5 1.9±0.1 ■ Features 1.5 -0.05 ■ Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current (Ta=25˚C) Symbol Ratings Unit VCBO 50 V VCEO 50 V IC 100 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0.1 to 0.3 0.4±0.2 4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: EM Internal Connection 5 Tr1 1 4 3 ■ Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Tr2 2 (Ta=25˚C) Symbol Conditions min VCBO IC = 10µA, IE = 0 50 50 typ max Unit V VCEO IC = 2mA, IB = 0 ICBO VCB = 50V, IE = 0 0.1 ICEO VCE = 50V, IB = 0 0.5 µA IEBO VEB = 6V, IC = 0 0.2 mA 0.25 V Forward current transfer ratio hFE VCE = 10V, IC = 5mA 80 Forward current transfer hFE ratio hFE (small/large) VCE = 10V, IC = 5mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ Output voltage low level VOL Input resistance R1 Resistance ratio R1/R2 Transition frequency fT V 0.99 0.06 4.9 –30% µA V 2.2 0.2 V +30% kΩ 0.047 VCB = 10V, IE = –2mA, f = 200MHz 150 MHz 1 Composite Transistors XN121M PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE VCE(sat) — IC 10 Collector current IC (mA) 200 IB=1.0mA 0.9mA 0.8mA 0.7mA 160 0.6mA 0.5mA 0.4mA 0.3mA 120 0.2mA 80 0.1mA 40 IC/IB=10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0 –25˚C 0.01 0.003 2 4 6 8 10 400 300 Ta=75˚C 25˚C 200 –25˚C 100 0 1 12 3 10 30 100 300 1 1000 Cob — VCB 3 IO — VIN 104 5 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C f=1MHz IE=0 Ta=25˚C 10 Collector current IC (mA) Collector current IC (mA) Collector to emitter voltage VCE (V) VO=0.2V Ta=25˚C 30 4 3 2 103 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) VCE=10V 0.001 0 102 101 10 3 1 0.3 0.1 1 0.03 0 0.1 0.3 1 3 10 Collector to base voltage 2 hFE — IC 500 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100