Transistor 2SC3935 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 2.1±0.1 ■ Features Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 +0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : 1S Symbol Conditions ICBO VCB = 10V, IE = 0 min ICEO VCE = 10V, IB = 0 Collector to emitter voltage VCEO IC = 2mA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 3 hFE1 VCE = 2.4V, IC = 7.2mA 75 75 hFE2 VCE = 2.4V, IC = 100µA Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 4mA Transition frequency fT VCE = 2.4V, IC = 7.2mA, f = 200MHz Collector output capacitance Cob VCB = 4V, IE = 0, f = 1MHz Common emitter reverse transfer capacitance Crb Base time constant rbb' · CC hFE ratio hFE(RATIO) FE 0.3–0 0.65 1.3±0.1 0.65 1:Base 2:Emitter 3:Collector 0.2±0.1 (Ta=25˚C) Parameter *1h 0.15–0.05 Ratings Forward current transfer ratio 3 0 to 0.1 Symbol Collector cutoff current 1 2 (Ta=25˚C) Parameter ■ Electrical Characteristics 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● 2.0±0.2 ● High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacitance Crb. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 ● 0.425 typ max Unit 1 µA 10 µA 10 V V 220 0.5 V 1.9 2.5 GHz 0.9 1.1 pF VCB = 4V, IE = 0, f = 1MHz 0.25 0.35 pF VCB = 4V, IE = –5mA, f = 31.9MHz 11.8 13.5 ps VCE = 2.4V, IC = 100µA VCE = 2.4V, IC = 7.2mA 1.4 0.75 1.6 Rank classification Rank P Q hFE 75 ~ 130 110 ~ 220 1 2SC3935 Transistor PC — Ta IC — VCE 60 TC=Ta 120 80 40 60 50 IB=500µA 400µA 40 300µA 30 200µA 20 100µA Ta=75˚C –25˚C 40 30 20 10 10 0 40 60 80 100 120 140 160 0 0 2 10 3 1 Ta=75˚C 25˚C –25˚C 0.03 1 3 10 30 100 Collector current IC (mA) Cob — VCB IE=0 f=1MHz Ta=25˚C 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 0 0.4 30 100 Collector to base voltage VCB (V) 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V) fT — I E 4.0 300 Ta=75˚C 240 25˚C 180 –25˚C 120 60 VCB=4V Ta=25˚C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 0.3 1 3 10 30 Collector current IC (mA) 1.6 1.4 12 VCE=4V Forward current transfer ratio hFE 30 0.3 10 360 IC/IB=10 0.01 0.1 8 hFE — IC 100 0.1 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 4 Transition frequency fT (GHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 50 160 0 Collector output capacitance Cob (pF) VCE=4V 25˚C Ta=25˚C 70 0 2 IC — VBE 80 Collector current IC (mA) Collector power dissipation PC (mW) 200 100 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100