Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0±0.1 ● 0.4 0.2–0.05 ■ Features Symbol Ratings Unit VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Collector current IC –30 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 ˚C Storage temperature Tstg –55 ~ +125 ˚C ■ Electrical Characteristics Symbol Emitter cutoff current 1:Base 2:Emitter 3:Collector +0.1 0.2±0.1 EIAJ:SC–75 SS–Mini Type Package Marking symbol : E (Ta=25˚C) Parameter Collector cutoff current 0 to 0.1 Parameter Collector to base voltage 0.15–0.05 (Ta=25˚C) 0.75±0.15 ■ Absolute Maximum Ratings 0.45±0.1 0.3 2 Conditions min typ max ICBO VCB = –10V, IE = 0 – 0.1 ICEO VCE = –20V, IB = 0 –100 IEBO VEB = –5V, IC = 0 –10 * Unit µA µA Forward current transfer ratio hFE VCE = –10V, IC = 1mA 70 Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 150 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Noise figure NF VCB = –10V, IE = 1mA, f = 5MHz 2.8 4.0 dB Reverse transfer impedance Zrb VCB = –10V, IE = 1mA, f = 2MHz 22 60 Ω 1.2 2.0 pF Common emitter reverse transfer capacitance *h FE MHz IC = –10mA, IB = –1mA – 0.1 V VCE = –10V, IC = –1mA – 0.7 V VCE = –10V, IC = –1mA Cre 220 300 f = 10.7MHz Rank classification Rank B C hFE 70 ~ 140 110 ~ 220 Marking Symbol EB EC 1 2SA1790 Transistor PC — Ta IC — VCE 125 –25 100 75 50 25 IB=–250µA –20 –200µA –15 –150µA –30 –10 –3 –1 Ta=75˚C 25˚C –100µA –25˚C – 0.1 –50µA – 0.03 0 40 60 80 100 120 140 160 0 –2 –4 –6 80 25˚C –25˚C 60 40 20 0 – 0.1 – 0.3 –1 –3 –10 –30 Collector output capacitance Cob (pF) Ta=75˚C f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 – 0.1 – 0.3 –100 Collector current IC (mA) –1 –3 –10 –30 –100 Collector to base voltage VCB (V) fT — IE 24 20 400 300 200 100 1 3 IC=–1mA f=10.7MHz Ta=25˚C 4 3 2 1 0 –1 –3 10 30 Emitter current IE (mA) 100 –10 –30 –100 NF — IE VCB=–10V f=100MHz Ta=25˚C 4 16 12 8 3 2 1 4 0.3 –100 5 Noise figure NF (dB) Power gain PG (dB) 500 –30 Collector to emitter voltage VCE (V) VCE=–10V f=100MHz Ta=25˚C VCB=–10V Ta=25˚C –10 5 PG — IC 600 –3 Cre — VCE 6 VCE=–10V –1 Collector current IC (mA) Cob — VCB 120 100 – 0.01 – 0.1 – 0.3 –10 Collector to emitter voltage VCE (V) hFE — IC 0 0.1 –8 Common emitter reverse transfer capacitance Cre (pF) 20 Ambient temperature Ta (˚C) Forward current transfer ratio hFE IC/IB=10 – 0.3 –10 –5 0 Transition frequency fT (MHz) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 0 2 VCE(sat) — IC –100 –30 Collector current IC (mA) Collector power dissipation PC (mW) 150 0 – 0.1 – 0.3 –1 –3 –10 –30 Collector current IC (mA) –100 0 0.1 0.3 1 3 Emitter current IE (mA) 10