Transistor 2SB1539 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2359 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 ■ Features 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 ■ Absolute Maximum Ratings * (Ta=25˚C) 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO –20 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Peak collector current ICP –1.2 A Collector current IC –1 A * Collector power dissipation PC Junction temperature Tj Storage temperature Tstg 1 W 150 ˚C –55 ~ +150 ˚C 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1N Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol Conditions min typ max Unit –1 µA Collector cutoff current ICBO VCB = –14V, IE = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –20 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –20 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V –100mA** Forward current transfer ratio hFE VCE = –2V, IC = Collector to emitter saturation voltage VCE(sat) IC = –500mA, IB = –10mA** 200 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 120 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 30 800 – 0.2 V MHz pF ** Pulse measurement 1 Transistor 2SB1539 PC — Ta IC — VCE Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 –1.0 –1.4mA –1.2mA – 0.6mA – 0.4mA – 0.2 0.2 60 80 100 120 140 160 – 0.4 – 0.2 –1 Ta=75˚C 25˚C –25˚C – 0.1 – 0.03 – 0.01 – 0.003 –1 –3 –10 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 80 60 40 20 0 –1 –3 –10 –8 –10 –12 0 – 0.4 – 0.8 –1.2 –30 240 Ta=75˚C 500 25˚C 300 –25˚C 200 100 0 – 0.01 – 0.03 – 0.1 – 0.3 –100 Collector to base voltage VCB (V) –2.0 –2.4 VCB=–10V f=200MHz Ta=25˚C VCE=–2V 400 –1.6 Base to emitter voltage VBE (V) fT — I E 200 160 120 80 40 0 –1 –3 Collector current IC (A) Cob — VCB 100 –6 600 Forward current transfer ratio hFE –3 120 –4 Collector to emitter voltage VCE (V) IC/IB=50 – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 –2 hFE — IC –10 – 0.3 0 0 VCE(sat) — IC –25˚C – 0.6 Transition frequency fT (MHz) 40 Ta=75˚C – 0.8 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) –1.0mA – 0.8mA – 0.4 0.4 0 Collector output capacitance Cob (pF) IB=–1.6mA – 0.6 0.6 25˚C –1.0 – 0.8 0.8 VCE=–2V Ta=25˚C 0 2 –1.2 Collector current IC (A) 1.2 IC — VBE –1.2 Collector current IC (A) Collector power dissipation PC (W) 1.4 –10 1 3 10 30 100 300 Emitter current IE (mA) 1000