Transistor 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD968 and 2SD968A Unit: mm Parameter Symbol Collector to 2SB789 base voltage 2SB789A Collector to 2SB789 Ratings –100 VCBO –120 –100 VCEO emitter voltage 2SB789A * –120 0.4±0.08 Unit +0.25 0.4max. (Ta=25˚C) +0.1 ■ Absolute Maximum Ratings 45° 4.0–0.20 High collector to emitter voltage VCEO. Large collector power dissipation PC. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 ■ Features 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 V 3 2 1 V marking Emitter to base voltage VEBO –5 V Peak collector current ICP –1 A Collector current IC –0.5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : D(2SB789) E(2SB789A) Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics (Ta=25˚C) Parameter Conditions Symbol Collector to emitter 2SB789 voltage 2SB789A Collector to base voltage Forward current transfer ratio min typ max –100 VCEO IC = –100µA, IB = 0 VEBO IE = –10µA, IC = 0 –5 hFE1* VCE = –10V, IC = –150mA 90 50 V –120 V 220 hFE2 VCE = –5V, IC = –500mA Collector to emitter saturation voltage VCE(sat) IC = –500mA, IB = –50mA – 0.2 – 0.6 Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA – 0.85 –1.2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz *h FE1 Unit 120 V V MHz 30 pF Rank classification Marking Symbol Rank Q R hFE1 90 ~ 155 130 ~ 220 2SB789 DQ DR 2SB789A EQ ER 1 Transistor 2SB789, 2SB789A PC — Ta IC — VCE Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. –1.2 Ta=25˚C –1.0 –18mA –16mA –14mA 1.0 – 0.8mA – 0.6mA – 0.4mA – 0.6 0.6 – 0.4 0.4 – 0.2mA – 0.2 0.2 0 – 0.4 – 0.2 40 60 80 100 120 140 160 0 0 IC/IB=10 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C – 0.3 –4 –6 –8 –10 –12 –100 –30 –10 –3 25˚C Ta=–25˚C 75˚C – 0.1 – 0.03 – 0.03 –1 –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (A) Collector output capacitance Cob (pF) 140 120 100 80 60 40 20 0 3 10 –10 30 Emitter current IE (mA) 100 IE=0 f=1MHz Ta=25˚C 45 40 35 30 25 20 15 10 5 0 –1 –3 –10 –9 –12 –15 VCE=–10V –30 500 400 300 Ta=75˚C 200 25˚C –25˚C 100 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) Cob — VCB 160 1 –3 50 VCB=–10V Ta=25˚C 180 –1 Collector current IC (A) fT — IE 200 –6 600 IC/IB=10 –1 –3 Base current IB (mA) hFE — IC – 0.3 – 0.1 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) –100 –2 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) – 0.6 Forward current transfer ratio hFE 20 Ambient temperature Ta (˚C) Transition frequency fT (MHz) – 0.8 0 0 2 –1.0 –12mA –10mA – 0.8 0.8 VCE=–10V Ta=25˚C IB=–20mA Collector current IC (A) 1.2 IC — I B –1.2 Collector current IC (A) Collector power dissipation PC (W) 1.4 –100 Collector to base voltage VCB (V) –10