Transistor 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 * Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –40 V Emitter to base voltage VEBO –5 V Peak collector current ICP –3 A Collector current IC –1.5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics 3 2 2.5 1:Base 2:Collector 3:Emitter 1 2.5 EIAJ:SC–71 M Type Mold Package or more, and the board (Ta=25˚C) Parameter Symbol ICBO Collector cutoff current 0.45±0.05 (Ta=25˚C) 1.25±0.05 0.55±0.1 ■ Absolute Maximum Ratings Conditions min typ max Unit VCB = –20V, IE = 0 –1 µA ICEO VCE = –10V, IB = 0 –100 µA Emitter cutoff current IEBO VEB = –5V, IC = 0 –10 µA Collector to base voltage VCBO IC = –1mA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –40 V *1 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) VCE = –5V, IC = –1A*2 80 220 IC = –1.5A, IB = –0.15A*2 –1 –0.2A*2 Base to emitter saturation voltage VBE(sat) IC = –2A, IB = Transition frequency fT VCB = –5V, IE = 0.5A, f = 200MHz 150 –1.5 Collector output capacitance Cob VCB = –20V, IE = 0, f = 1MHz 45 FE V MHz pF *2 *1h V Pulse measurement Rank classification Rank Q R hFE 80 ~ 160 120 ~ 220 1 Transistor 2SB819 IC — VCE 1.0 0.8 0.6 0.4 Ta=25˚C –35mA –3.0 –30mA –2.5 –25mA –2.0 –20mA –1.5 –15mA –10mA –1.0 – 0.5 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 –3 Ta=–25˚C –1 75˚C – 0.3 – 0.1 – 0.03 –6 –8 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Ta=75˚C 25˚C 200 –25˚C 100 –1 –3 200 160 120 80 40 0 10 –10 Collector current IC (A) Cob — VCB 30 30 –30 –100 Collector to base voltage VCB (V) 1000 –50 VCE=–12V 300 ICEO (Ta) ICEO (Ta=25˚C) 60 1000 3000 10000 Ta=25˚C Collector to emitter voltage VCER (V) 90 300 ICEO — Ta –60 120 100 Emitter current IE (mA) VCER — RBE 150 –40 –30 –20 –10 0 0.001 –10 VCB=–5V Ta=25˚C 400 300 –3 240 0 – 0.01 – 0.03 – 0.1 – 0.3 –10 IE=0 f=1MHz Ta=25˚C –1 Collector current IC (A) fT — I E 500 Collector current IC (A) –10 –25˚C VCE=–5V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –10 –3 Ta=75˚C 25˚C – 0.3 600 IC/IB=10 –30 0 –1 –1 hFE — IC –100 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –3 Collector to emitter voltage VCE (V) VBE(sat) — IC 25˚C –10 Transition frequency fT (MHz) 40 –30 – 0.03 0 20 IC/IB=10 – 0.1 –5mA 0.2 0 Collector output capacitance Cob (pF) –100 IB=–40mA –3.5 Collector current IC (A) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC –4.0 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.2 100 30 10 3 1 0.01 0.1 1 10 Base to emitter resistance RBE (kΩ) 0 20 40 60 80 100 120 Ambient temperature Ta (˚C) 2SB819 Transistor Area of safe operation (ASO) –10 –3 Single pulse Ta=25˚C ICP Collector current IC (A) IC t=10ms –1 t=1s – 0.3 – 0.1 – 0.03 – 0.01 – 0.003 – 0.001 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) 3