PANASONIC 2SD1385

Transistor
2SD1385
Silicon NPN triple diffusion planer type
For low-frequency output amplification
Unit: mm
6.9±0.1
1.5
■ Absolute Maximum Ratings
*
Ratings
Unit
Collector to base voltage
VCBO
400
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
200
mA
Collector current
IC
100
mA
Collector power dissipation
PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
1cm2
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
Parameter
1.0
4.5±0.1
4.1±0.2
7
0.55±0.1
3
Symbol
■ Electrical Characteristics
0.85
(Ta=25˚C)
Parameter
2.4±0.2 2.0±0.2 3.5±0.1
●
0.45±0.05
2
2.5
1:Base
2:Collector
3:Emitter
1
1.25±0.05
●
0.
●
High collector to base voltage VCBO.
High collector to emitter voltage VCEO.
Large collector power dissipation PC.
Low collector to emitter saturation voltage VCE(sat).
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0
R
●
1.0±0.1
●
0.4
■ Features
2.5±0.1
1.5 R0.9
R0.9
2.5
EIAJ:SC–71
M Type Mold Package
or more, and the board
(Ta=25˚C)
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 100µA, IE = 0
400
V
Collector to emitter voltage
VCEO
IC = 500µA, IB = 0
400
V
Emitter to base voltage
VEBO
IE = 100µA, IC = 0
5
V
30
Forward current transfer ratio
hFE
VCE = 5V, IC = 30mA
Collector to emitter saturation voltage
VCE(sat)
IC = 50mA, IB = 5mA
Base to emitter saturation voltage
VBE(sat)
IC = 50mA, IB = 5mA
Transition frequency
fT
VCB = 30V, IE = –20mA, f = 200MHz
Collector output capacitance
Cob
VCB = 30V, IE = 0, f = 1MHz
1.5
1.5
40
V
V
MHz
7
pF
1
Transistor
2SD1385
IC — VCE
1.0
0.8
0.6
0.4
Ta=25˚C
100
Collector current IC (mA)
0.2
80
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
60
40
0.2mA
20
0.1mA
0
0
40
80
120
160
200
0
Ambient temperature Ta (˚C)
2
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
30
10
3
25˚C
Ta=–25˚C
75˚C
0.3
0.1
0.03
1
3
10
30
100
Collector current IC (mA)
Collector output capacitance Cob (pF)
IE=0
f=1MHz
Ta=25˚C
10
8
6
4
2
0
10
30
100
12
10
3
1
25˚C
300
10
8
6
25˚C
Ta=75˚C
4
–25˚C
2
0
0.1
30.
1
3
1000
Collector to base voltage VCB (V)
Ta=75˚C
0.3
–25˚C
0.1
0.03
0.01
0.1
0.3
1
3
10
30
100
Collector current IC (mA)
60
VCE=5V
10
20
Collector current IC (mA)
Cob — VCB
12
10
30
fT — I E
12
IC/IB=10
0.3
8
IC/IB=10
hFE — IC
100
0.01
0.1
6
100
Collector to emitter voltage VCE (V)
VBE(sat) — IC
1
4
VCB=30V
Ta=25˚C
Transition frequency fT (MHz)
Collector power dissipation PC (W)
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
0
2
VCE(sat) — IC
120
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
1.2
100
50
40
30
20
10
0
–1
–3
–10
–30
–100 –300 –1000
Emitter current IE (mA)