Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 ■ Absolute Maximum Ratings * (Ta=25˚C) 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V Peak collector current ICP 8 A Collector current IC 5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics 2 2.5 1cm2 0.45±0.05 1:Base 2:Collector 3:Emitter 1 1.25±0.05 0.55±0.1 2.5 EIAJ:SC–71 M Type Mold Package or more, and the board (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 µA Emitter cutoff current IEBO VEB = 7V, IC = 0 0.1 µA Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V hFE1 Forward current transfer ratio *1 VCE = 2V, IC = 0.5A*2 hFE2 VCE = 2V, IC = 2A*2 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.1A*2 Transition frequency fT VCB = 6V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 20V, IE = 0, f = 1MHz 230 600 150 1 150 50 *2 *1h FE1 V MHz pF Pulse measurement Rank classification Rank Q R hFE1 230 ~ 380 340 ~ 600 1 2SD1244 Transistor PC — Ta IC — VCE 1.0 0.8 0.6 0.4 6 IB=7mA 2.0 0.2 6mA 5mA 4mA 1.2 3mA 0.8 2mA 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.4 3 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.1 0.3 1 0.8 1.2 1.6 2.0 2.4 0 3 30 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 0.3 fT — IE 1 3 250 200 150 100 50 –3 Emitter current IE (A) Ta=75˚C 300 –10 25˚C –25˚C 200 100 0.1 0.3 1 3 10 Area of safe operation (ASO) IE=0 f=1MHz Ta=25˚C 80 60 40 Single pulse Ta=25˚C 30 10 3 ICP IC t=10ms t=1s 1 0.3 0.1 20 0.03 0 –1 400 100 Collector current IC (A) Collector output capacitance Cob (pF) 300 2.0 Collector current IC (A) Cob — VCB 350 1.6 500 0 0.01 0.03 10 100 VCB=6V Ta=25˚C 1.2 VCE=2V Collector current IC (A) 400 0.8 600 IC/IB=30 Collector current IC (A) 0 – 0.01 – 0.03 – 0.1 – 0.3 0.4 Base to emitter voltage VBE (V) hFE — IC 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) IC/IB=30 0.001 0.01 0.03 2 VBE(sat) — IC 10 0.1 3 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 4 0 0 Forward current transfer ratio hFE 40 –25˚C 1 1mA 0 20 25˚C Ta=75˚C 5 1.6 0.4 0 Transition frequency fT (MHz) VCE=2V Ta=25˚C Collector current IC (A) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 IC — VBE 2.4 Collector current IC (A) Collector power dissipation PC (W) 1.2 1 3 10 30 100 Collector to base voltage VCB (V) 0.01 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V)