PANASONIC 2SA1123

Transistor
2SC2631
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1123
Unit: mm
●
●
●
Satisfactory linearity of forward current transfer ratio hFE.
High collector to emitter voltage VCEO.
Small collector output capacitance Cob.
■ Absolute Maximum Ratings
Parameter
13.5±0.5
■ Features
4.0±0.2
5.1±0.2
5.0±0.2
(Ta=25˚C)
Symbol
Ratings
Unit
+0.2
+0.2
0.45 –0.1
0.45 –0.1
VCBO
150
V
VCEO
150
V
Emitter to base voltage
VEBO
Peak collector current
ICP
Collector current
IC
50
mA
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
5
V
100
mA
1.27
1.27
2.3±0.2
Collector to base voltage
Collector to emitter voltage
1 2 3
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
1
µA
Collector cutoff current
ICBO
VCB = 100V, IE = 0
Collector to emitter voltage
VCEO
IC = 0.1mA, IB = 0
150
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
5
V
Forward current transfer ratio
hFE
*
VCE = 5V, IC = 10mA
Collector to emitter saturation voltage
VCE(sat)
IC = 30mA, IB = 3mA
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
Noise voltage
NV
*h
FE
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
130
330
1
160
150
V
MHz
3
pF
300
mV
Rank classification
Rank
R
S
hFE
130 ~ 220
185 ~ 330
1
2SC2631
Transistor
PC — Ta
IC — VBE
VCE(sat) — IC
120
Collector to emitter saturation voltage VCE(sat) (V)
1.0
25˚C
100
0.8
Collector current IC (mA)
0.6
0.4
0.2
Ta=75˚C
–25˚C
80
60
40
20
0
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
0.4
0.8
1.2
300
Transition frequency fT (MHz)
Forward current transfer ratio hFE
500
400
Ta=75˚C
25˚C
–25˚C
200
100
1
3
10
30
Collector current IC (mA)
2
10
3
1
Ta=75˚C
0.3
25˚C
0.1
–25˚C
0.03
0.01
0.1
0.3
1
100
250
200
150
100
50
0
–1
3
10
30
100
Collector current IC (mA)
Cob — VCB
VCB=10V
f=100MHz
Ta=25˚C
VCE=10V
0.3
30
fT — I E
600
0
0.1
2.0
IC/IB=10
Base to emitter voltage VBE (V)
hFE — IC
300
1.6
5
Collector output capacitance Cob (pF)
Collector power dissipation PC (W)
VCE=10V
100
IE=0
f=1MHz
Ta=25˚C
4
3
2
1
0
–3
–10
–30
Emitter current IE (mA)
–100
1
3
10
30
100
Collector to base voltage VCB (V)