Transistor 2SB774 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 High emitter to base voltage VEBO. Protective diodes and resistances between emitter and base can be omitted. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –25 V Emitter to base voltage VEBO –15 V Peak collector current ICP –200 mA Collector current IC –100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 0.45 –0.1 1.27 1.27 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol ICBO Collector cutoff current +0.2 0.45 –0.1 2.3±0.2 ● 13.5±0.5 ● 4.0±0.2 5.1±0.2 ■ Features Conditions min typ VCB = –10V, IE = 0 max Unit –1 µA –100 µA ICEO VCE = –20V, IB = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –30 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –25 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –15 V VCE = –10V, IC = –2mA 210 VCE = –2V, IC = –100mA 90 hFE1 Forward current transfer ratio * hFE2 Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA Transition frequency fT VCB = –10V, IE = 2mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz *h FE1 460 –0.5 V 150 MHz 4 pF Rank classification Rank R S hFE1 210 ~ 340 290 ~ 460 1 2SB774 Transistor PC — Ta IC — VCE –200 Ta=25˚C 350 200 150 100 –1.0mA – 0.6mA – 0.4mA –80 – 0.2mA –40 –140 –120 25˚C –100 Ta=75˚C –25˚C –80 –60 –40 –20 0 40 60 80 100 120 140 160 0 0 –2 –10 –3 –1 – 0.3 Ta=75˚C 25˚C –25˚C –3 –10 –30 –100 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 10 8 6 4 2 0 –1 –3 –10 0 – 0.4 –30 –100 Collector to base voltage VCB (V) – 0.8 –1.2 –1.6 1000 500 400 Ta=75˚C 25˚C 300 –25˚C 200 100 0 – 0.1 – 0.3 –1 –3 –2.0 Base to emitter voltage VBE (V) fT — I E –10 –30 Collector current IC (mA) Cob — VCB 12 –12 VCB=–10V Ta=25˚C VCE=–10V Forward current transfer ratio hFE –30 –1 –10 600 IC/IB=10 – 0.01 – 0.1 – 0.3 –8 hFE — IC –100 – 0.03 –6 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.1 –4 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) –160 50 0 Collector output capacitance Cob (pF) –1.4mA – 0.8mA –120 250 –180 –1.2mA –160 300 –1.6mA Collector current IC (mA) –200 400 VCE=–10V IB=–1.8mA 450 0 2 IC — VBE –240 Collector current IC (mA) Collector power dissipation PC (mW) 500 –100 300 100 30 10 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100