Transistor 2SC2925 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 5.0±0.2 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 15 V Peak collector current ICP 1.5 A Collector current IC 0.7 A Collector power dissipation PC 750 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter +0.2 0.45 –0.1 1.27 1.27 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Symbol Collector cutoff current +0.2 0.45 –0.1 2.3±0.2 ● 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 Conditions min typ max Unit ICBO VCB = 20V, IE = 0 1 µA ICEO VCE = 20V, IB = 0 10 µA Collector to base voltage VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 Forward current transfer ratio hFE* VCE = 10V, IC = 150mA 400 Collector to emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 11 *h FE V 1000 2000 IC = 500mA, IB = 50mA 0.15 0.4 VCB = 10V, IE = –10mA, f = 200MHz 200 V MHz 15 pF Rank classification Rank R hFE 400 ~ 800 S T 600 ~ 1200 1000 ~ 2000 1 2SC2925 Transistor IC — VCE VCE(sat) — IC 120 0.6 0.4 0.2 80µA 70µA 80 60µA 60 50µA 40µA 40 30µA 20µA 20 10µA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 8 10 12 30 3 Ta=75˚C –25˚C 0.3 0.1 0.03 0.3 1 3 10 Collector current IC (A) Cob — VCB f=1MHz Ta=25˚C 35 30 25 20 15 10 5 0 3 10 30 100 Collector to base voltage VCB (V) Ta=75˚C 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 VCB=10V Ta=25˚C Ta=75˚C 25˚C –25˚C 800 400 350 300 250 200 150 100 50 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 40 1 0.3 400 1200 1 0.1 1 VCE=10V 1600 0.01 0.01 0.03 3 fT — I E 2000 10 25˚C 10 Collector current IC (A) 2400 Forward current transfer ratio hFE IC/IB=10 IC/IB=10 30 hFE — IC 100 Base to emitter saturation voltage VBE(sat) (V) 6 100 Collector to emitter voltage VCE (V) VBE(sat) — IC Collector output capacitance Cob (pF) 4 Transition frequency fT (MHz) 0 2 IB=100µA 90µA 100 0.8 Collector current IC (mA) Collector power dissipation PC (W) Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.0 10 0 – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 Emitter current IE (A) –1