Transistor 2SA1858 Silicon PNP epitaxial planer type For general amplification Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 High collector to emitter voltage VCEO. 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –300 V Collector to emitter voltage VCEO –300 V Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA Collector current IC –70 mA Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.15 0.45 –0.1 1.27 1.27 2.54±0.15 (Ta=25˚C) Parameter Symbol Conditions min Collector to emitter voltage VCEO IC = –100µA, IB = 0 Emitter to base voltage VEBO IE = –1µA, IC = 0 –5 Forward current transfer ratio hFE* VCE = –10V, IC = –5mA 30 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = –1mA Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz FE +0.15 0.45 –0.1 1:Emitter 2:Collector 3:Base TO–92NL Package 1 2 3 ■ Electrical Characteristics *h 13.5±0.5 ■ Absolute Maximum Ratings 2.3±0.2 ● 8.0±0.2 ■ Features typ max –300 Unit V V 150 – 0.6 50 V MHz 7 pF Rank classification Rank P Q hFE 30 ~ 100 60 ~ 150 1 Transistor 2SA1858 PC — Ta IC — VCE 1.2 IC — VBE –100 –120 VCE=–10V IB=–1.0mA 0.8 0.6 0.4 –0.9mA –70 –0.8mA –60 –0.7mA –0.6mA –50 –0.5mA –40 –0.4mA –30 –0.3mA –20 0.2 0 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) –2 –10 –3 –1 Ta=75˚C –25˚C – 0.03 –1 –3 –10 –30 –12 Ta=75˚C 150 25˚C 100 –25˚C 50 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C VCE=–120V 3000 1000 ICEO (Ta) ICEO (Ta=25˚C) 14 12 10 8 300 100 30 6 10 4 3 2 1 –10 –30 –100 Collector to base voltage VCB (V) – 0.8 –1.2 –1.6 –2.0 0 40 80 120 160 200 100 80 60 40 20 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) ICEO — Ta 10000 –3 – 0.4 Base to emitter voltage VBE (V) VCB=–10V Ta=25˚C 16 0 –1 0 fT — IE 200 Cob — VCB Collector output capacitance Cob (pF) –10 250 –100 20 18 –8 120 Collector current IC (mA) 2 –6 VCE=–10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –30 – 0.01 – 0.1 – 0.3 –4 300 IC/IB=10 – 0.1 –40 hFE — IC –100 25˚C –60 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –80 0 0 Transition frequency fT (MHz) 20 –25˚C –0.1mA 0 0 Ta=75˚C –20 –0.2mA –10 25˚C –100 –80 Collector current IC (mA) 1.0 Collector current IC (mA) Collector power dissipation PC (W) Ta=25˚C –90 240 Ambient temperature Ta (˚C) 100