Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SA1309A Unit: mm 3.0±0.2 4.0±0.2 ■ Features (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1 2 3 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Symbol Collector cutoff current marking 2.0±0.2 ■ Absolute Maximum Ratings 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. 0.7±0.1 ● +0.2 0.45–0.1 ● Conditions ICBO VCB = 10V, IE = 0 min typ max Unit 0.1 µA 1 µA ICEO VCE = 10V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V * Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.1 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF *h FE VCE = 10V, IC = 2mA 160 460 0.3 V Rank classification Rank Q R S hFE 160 ~ 260 210 ~ 340 290 ~ 460 1 2SC3311A Transistor PC — Ta IC — VCE 200 Ta=25˚C 200 100 IB=160µA 40 140µA 120µA 30 100µA 80µA 20 60µA 40µA 10 160 120 25˚C 80 Ta=75˚C –25˚C 40 20µA 0 40 60 80 100 120 140 160 0 0 2 4 10 3 1 0.3 Ta=75˚C –25˚C 0.3 1 3 10 30 Ta=75˚C 400 25˚C 300 –25˚C 200 100 0.3 1 3 10 30 100 Collector current IC (mA) Cob — VCB IE=0 f=1MHz Ta=25˚C 6 4 2 VCE=10V Function=FLAT Ta=25˚C 200 Noise voltage NV (mV) 8 160 120 Rg=100kΩ 80 20kΩ 4.7kΩ 40 0 0 10 30 100 Collector to base voltage VCB (V) 1 30 100 1.2 1.6 2.0 300 Collector current IC (µA) 250 VCE=10V f=100MHz Ta=25˚C 200 150 100 50 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) NV — IC 240 0.8 fT — I E 500 0 0.1 100 10 3 0.4 Base to emitter voltage VBE (V) 300 Collector current IC (mA) 1 0 VCE=10V Forward current transfer ratio hFE 30 0.01 0.1 12 600 IC/IB=10 0.03 10 hFE — IC 100 25˚C 8 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.1 6 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 300 0 Collector output capacitance Cob (pF) VCE=10V 50 400 0 2 IC — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 500 1000 –100