Power Transistors 2SD2556 Silicon NPN epitaxial planer type Unit: mm 0.8 max. 0.75±0.1 2.3±0.1 Rating Unit VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 10 A Collector current IC 5 A PC 10 W 1 TC = 25°C Ta = 25°C (5.3) (4.35) (3.0) (1.8) Symbol Collector power dissipation 1.0±0.1 0.1±0.05 0.5±0.1 2 (5.5) Parameter 0.5±0.1 4.6±0.1 ■ Absolute Maximum Ratings TC = 25°C Collector to base voltage 2.3±0.1 1.8±0.1 • High forward current transfer ratio hFE • Allowing supply with the radial taping • Low collector to emitter saturation voltage VCE(sat): < 0.5 V 2.5±0.1 ■ Features 7.3±0.1 6.5±0.1 5.3±0.1 4.35±0.1 1.0±0.2 For power switching 3 1: Base 2: Collector 3: Emitter U Type Package Internal Connection 1 C Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = 100 V, IE = 0 10 µA Emitter cutoff current IEBO VEB = 5 V, IC = 0 50 µA Collector to emitter voltage VCEO IC = 1 mA, IB = 0 80 Forward current transfer ratio hFE1 VCE = 2 V, IC = 0.1 A 45 * VCE = 2 V, IC = 2 A 90 Collector to emitter saturation voltage VCE(sat) IC = 4 A, IB = 0.2 A Base to emitter saturation voltage VBE(sat) IC = 4 A, IB = 0.2 A hFE2 V 260 0.5 1.5 V V fT VCE = 10 V, IC = − 0.5 A, f = 10 MHz 30 MHz Turn-on time ton IC = 2 A, IB1 = 0.2 A, IB2 = − 0.2 A 0.5 µs Storage time tstg VCC = 50 V 1.5 µs Fall time tf 0.15 µs Transition frequency Note) *: Rank classification Rank P Q hFE2 130 to 260 90 to 180 1