Power Transistors 2SD2605 Silicon NPN triple diffusion planar type For power amplification Unit: mm ■ Features (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 6 V Peak collector current ICP 3 A Collector current IC 2 A Collector power TC=25°C dissipation 20 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter W 2.0 150 ˚C –55 to +150 ˚C 1.0 90° 2.5±0.2 ■ Absolute Maximum Ratings 10.0±0.2 13.0±0.2 4.2±0.2 ● 5.0±0.1 High collector to emitter VCEO Allowing supply with the radial taping 18.0±0.5 Solder Dip ● 0.35±0.1 1.2±0.1 C1.0 2.25±0.2 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 1 2 3 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package (TC=25˚C) Symbol Conditions min typ VCB = 200V, IE = 0 max Unit 50 µA 50 µA Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 4V, IC = 0 Collector to base voltage VCBO IC = 50µA, IE = 0 200 V Collector to emitter voltage VCEO IC = 5mA, IB = 0 150 V Emitter to base voltage VEBO IE = 500µA, IC = 0 6 V hFE1 Forward current transfer ratio * VCE = 10V, IC = 150mA 60 hFE2 VCE = 10V, IC = 400mA 50 240 Base to emitter voltage VBE VCE = 10V, IC = 400mA 1 V Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA 1 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz *h FE1 20 MHz Rank classification Rank Q P hFE1 60 to 140 100 to 240 1 Power Transistors 2SD2605 IC — VBE VCE=10V TC=25˚C 0.8 Collector current IC (A) Collector current IC (A) TC=25˚C IB=7mA 6mA 5mA 0.6 4mA 3mA 0.4 2mA 0.2 1.0 0.5 0 0 2 4 6 8 10 12 Collector to emitter voltage VCE (V) hFE — IC 104 Forward current transfer ratio hFE 1.5 1mA 0 VCE=10V TC=25˚C 103 102 10 1 10–2 10–1 1 Collector current IC (A) 2 VCE(sat) — IC 2.0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Base to emitter voltage VBE (V) Collector to emitter saturation voltage VCE(sat) (V) IC — VCE 1.0 10 IC/IB=10 TC=25˚C 1 10–1 10–2 10–2 10–1 1 Collector current IC (A) 10